Abstract: Disclosed herein is a device that includes first and second spaced-apart conductive pads positioned in a layer of insulating material, first and second under-bump metallization layers that are conductively coupled to the first and second conductive pads, respectively, and first and second spaced-apart conductive bumps that are conductively coupled to the first and second under-bump metallization layers, respectively. Additionally, the device includes, among other things, a passivation layer positioned above the layer of insulating material between the first and second spaced-apart conductive bumps, and a protective layer positioned on the passivation layer, wherein the protective layer extends between and contacts the first and second under-bump metallization layers, the material of the protective layer being one of silicon dioxide, silicon oxyfluoride (SiOF), silicon nitride (SiN), and silicone carbon nitride (SiCN).

Abstract: One illustrative method disclosed herein includes forming a conductive pad in a layer of insulating material, forming a passivation layer above the conductive pad, performing at least one etching process on the passivation layer to define an opening in the passivation layer that exposes at least a portion of the conductive pad, forming a protective layer on the passivation layer, in the opening and on the exposed portion of the conductive pad, forming a heat-curable material layer above the protective layer, performing an etching process to define a patterned heat-curable material layer having an opening that exposes a portion of the protective layer, performing an etching process on the protective layer to thereby expose at least a portion of the conductive pad and forming a conductive bump that is conductively coupled to the conductive pad.

Abstract: One illustrative method disclosed herein includes forming a conductive pad in a layer of insulating material, forming a passivation layer above the conductive pad, performing at least one etching process on the passivation layer to define an opening in the passivation layer that exposes at least a portion of the conductive pad, forming a protective layer on the passivation layer, in the opening and on the exposed portion of the conductive pad, forming a heat-curable material layer above the protective layer, performing an etching process to define a patterned heat-curable material layer having an opening that exposes a portion of the protective layer, performing an etching process on the protective layer to thereby expose at least a portion of the conductive pad and forming a conductive bump that is conductively coupled to the conductive pad.

Abstract: A die seal of a semiconductor device may be provided with a varying pattern density such that a gradient between the die region and the die seal may be reduced. Consequently, for a given width of the die seal, a required mechanical stability may be achieved, while at the same time differences in topography between the die region and the die seal may be reduced, thereby contributing to superior process conditions for sophisticated lithography processes.

Abstract: In a metallization system of a sophisticated semiconductor device, metal pillars may be provided so as to exhibit an increased efficiency in distributing any mechanical stress exerted thereon. This may be accomplished by significantly increasing the surface area of the final passivation layer that is in tight mechanical contact with the metal pillar.

Abstract: By controlling the cooling rate during the oxidation process for forming an oxide layer on solder balls and by selecting an elevated temperature as an initial temperature of the oxidation process, a reliable yet easily removable oxide layer may be obtained. Consequently, yield losses during the flip chip assembly process may be significantly reduced.

Abstract: In sophisticated semiconductor devices, a chip-package interconnect structure may be established on the basis of a metal pillar without using a solder bump material in the package. In this case, the complexity of the manufacturing process for forming the wiring system of the package may be significantly reduced, while also providing the possibility of increasing packing density of the pillar structure.

Abstract: In a metallization system of a sophisticated semiconductor device, metal pillars may be provided so as to exhibit an increased efficiency in distributing any mechanical stress exerted thereon. This may be accomplished by significantly increasing the surface area of the final passivation layer that is in tight mechanical contact with the metal pillar.

Abstract: By patterning the underbump metallization layer stack on the basis of a dry etch process, significant advantages may be achieved compared to conventional techniques involving a highly complex wet chemical etch process. In particular embodiments, a titanium tungsten layer or any other appropriate last layer of an underbump metallization layer stack may be etched on the basis of a plasma etch process using a fluorine-based chemistry and oxygen as a physical component. Moreover, appropriate cleaning processes may be performed for removing particles and residues prior to and after the plasma-based patterning process.

Abstract: By directly forming an underbump metallization layer on a contact region of the last metallization layer, the formation of any other terminal metals, such as aluminum and corresponding adhesion/barrier layers, may be avoided. Consequently, the thermal and electrical behavior of the resulting bump structure may be improved, while process complexity may be significantly reduced.

Abstract: By controlling the cooling rate during the oxidation process for forming an oxide layer on solder balls and by selecting an elevated temperature as an initial temperature of the oxidation process, a reliable yet easily removable oxide layer may be obtained. Consequently, yield losses during the flip chip assembly process may be significantly reduced.

Abstract: By patterning the underbump metallization layer stack on the basis of a dry etch process, significant advantages may be achieved compared to conventional techniques involving a highly complex wet chemical etch process. In particular embodiments, a titanium tungsten layer or any other appropriate last layer of an underbump metallization layer stack may be etched on the basis of a plasma etch process using a fluorine-based chemistry and oxygen as a physical component. Moreover, appropriate cleaning processes may be performed for removing particles and residues prior to and after the plasma-based patterning process.