Patents by Inventor Alexander R. Mitwalsky

Alexander R. Mitwalsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Crack stops
    Patent number: 6271578
    Abstract: Crack stops for substantially preventing cracks and chips produced along the dicing channel from spreading into the active areas of the ICs are described. The crack stops are formed by creating discontinuities in the thickness of the dielectric layer in the dicing channel near the chip edges. The discontinuities can result in increasing and/or decreasing the thickness of the dielectric layer.
    Type: Grant
    Filed: December 22, 1998
    Date of Patent: August 7, 2001
    Assignees: Siemens Aktiengesellschaft, International Business Machines Corporation
    Inventors: Alexander R. Mitwalsky, Tze-Chiang Chen
  • Crack stops
    Patent number: 6084287
    Abstract: Crack stops for substantially preventing cracks and chips produced along the dicing channel from spreading into the active areas of the ICs are described. The crack stops are formed by creating discontinuities in the thickness of the dielectric layer in the dicing channel near the chip edges. The discontinuities can result in increasing and/or decreasing the thickness of the dielectric layer.
    Type: Grant
    Filed: December 22, 1998
    Date of Patent: July 4, 2000
    Assignees: Siemens Aktiengesellschaft, International Business Machines Corporation
    Inventors: Alexander R. Mitwalsky, Tze-Chiang Chen
  • Crack stops
    Patent number: 6025639
    Abstract: Crack stops for substantially preventing cracks and chips produced along the dicing channel from spreading into the active areas of the ICs are described. The crack stops are formed by creating discontinuities in the thickness of the dielectric layer in the dicing channel near the chip edges. The discontinuities can result in increasing and/or decreasing the thickness of the dielectric layer.
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: February 15, 2000
    Assignees: Siemens Aktiengesellschaft, International Business Machines Corporation
    Inventors: Alexander R. Mitwalsky, Tze-Chiang Chen
  • Crack stops
    Patent number: 5789302
    Abstract: Crack stops for substantially preventing cracks and chips produced along the dicing channel from spreading into the active areas of the ICs are described. The crack stops are formed by creating discontinuities in the thickness of the dielectric layer in the dicing channel near the chip edges. The discontinuities can result in increasing and/or decreasing the thickness of the dielectric layer.
    Type: Grant
    Filed: March 24, 1997
    Date of Patent: August 4, 1998
    Assignees: Siemens Aktiengesellschaft, International Business Machines Corporation
    Inventors: Alexander R. Mitwalsky, Tze-Chiang Chen