Patents by Inventor Alexander Ripp

Alexander Ripp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective polymer growth on a semiconductor substrate
    Patent number: 8569103
    Abstract: Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: October 29, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Eyal Bar-sadeh, Nuriel Amir, Alexander Ripp, Yakov Shor, Dror Horvitz
  • SELECTIVE POLYMER GROWTH ON A SEMICONDUCTOR SUBSTRATE
    Publication number: 20120190194
    Abstract: Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.
    Type: Application
    Filed: April 3, 2012
    Publication date: July 26, 2012
    Inventors: Eyal Bar-sadeh, Nuriel Amir, Alexander Ripp, Yakov Shor, Dror Horvitz
  • High rate selective polymer growth on a substrate
    Patent number: 8183085
    Abstract: Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: May 22, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Eyal Bar-sadeh, Nuriel Amir, Alexander Ripp, Yakov Shor, Dror Horvitz
  • Forming low dielectric constant dielectric materials
    Patent number: 7935627
    Abstract: In some embodiments, a damascene structure may be formed with metal lines separated by a dielectric layer. Portions of the dielectric layer may be ion implanted with carbon and/or inert species to lower selectively the dielectric constant, while leaving the bulk of the dielectric layer unaffected by the implant. As a result, suitably low dielectric constants can be achieved in damascene dielectric layers with sufficient mechanical strength.
    Type: Grant
    Filed: March 5, 2009
    Date of Patent: May 3, 2011
    Inventors: Yakov Shor, Semeon Altshuler, Valery Shumilin, Alexander Ripp
  • HIGH RATE SELECTIVE POLYMER GROWTH ON A SUBSTRATE
    Publication number: 20100243306
    Abstract: Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.
    Type: Application
    Filed: March 31, 2009
    Publication date: September 30, 2010
    Inventors: Eyal Bar-sadeh, Nuriel Amir, Alexander Ripp, Yakov Shor, Dror Horvitz