Abstract: A technique improving the performance and extending the lifetime of an ion source with gas dilution is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and extending lifetime of an ion source in an ion implanter with gas dilution. The method may comprise releasing a predetermined amount of dopant gas into an ion source chamber, and releasing a predetermined amount of dilutant gas into the ion source chamber. The dilutant gas may comprise a mixture of a xenon-containing gas and a hydrogen-containing gas for diluting the dopant gas to improve the performance and extend the lifetime of the ion source.

Abstract: An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.

Abstract: A technique for providing an inductively coupled radio frequency plasma flood gun is disclosed. In one particular exemplary embodiment, the technique may be realized as a plasma flood gun in an ion implantation system. The plasma flood gun may comprise: a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; and a power source capable of inductively coupling radio frequency electrical power into the plasma chamber to excite the at least one gaseous substance to generate a plasma. Entire inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. In addition, the one or more apertures may be wide enough for at least one portion of charged particles from the plasma to flow through.

Abstract: An ion beam implanter includes ion beam forming and directing apparatus and an implantation station where workpieces are implanted with ions from an ion beam. The beam travels along an evacuated path from an ion source to the implantation station. A flexible bellows couples the implantation station to the beam forming and directing apparatus permitting the implantation station to be pivoted with respect to the beam forming and directing apparatus and thereby change an implantation orientation of the workpieces with respect to the ion beam. A replaceable, flexible bellows liner is disposed within an interior region of the bellows to reduce the volume of implantation byproducts deposited on an interior surface of the bellows.

Abstract: The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position.

Abstract: A method for cleaning an ion implantation, comprising providing an ion implantation system, wherein the ion implantation system comprises one or more components having one or more contaminants disposed thereon. A process species is provided to the ion implantation system, wherein the process species is otherwise utilized to implant ions into a workpiece. Ions are formed from the process species, therein defining an ion source. An ion beam is then extracted from the ion source via an application of an extraction voltage to an ion extraction assembly associated with the ion source. The extraction voltage is further modulated, wherein a trajectory of the ion beam is oscillated within a predetermined range. The ion beam is consequently swept across the one or more components, thus substantially removing the one or more contaminants therefrom.

Abstract: An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.

Abstract: An ion source for an ion implanter is provided, comprising: (i) a sublimator (52) having a cavity (66) for receiving a source material (68) to be sublimated and for sublimating the source material; (ii) a gas injector (104) for injecting gas into the cavity (66); (iii) an ionization chamber (58) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; and (iv) a feed tube (62) for connecting the sublimator (52) to the ionization chamber (58). The gas injected into the cavity may be either helium or hydrogen, and is designed to improve the heat transferability between walls (64) of the sublimator (52) and the source material (68).

Abstract: A method of implanting ionized icosaborane (B20HX), triantaborane (B30HX), and sarantaborane (B40HX) into a workpiece is provided, comprising the steps of (i) vaporizing and ionizing decaborane in an ion source (50) to create a plasma; (ii) extracting ionized icosaborane, triantaborane, and sarantaborane (collectively “higher order boranes”) within the plasma through a source aperture (126) to form an ion beam; (iii) mass analyzing the ion beam with a mass analysis magnet (127) to permit ionized icosaborane (B20HX+) or one of the other higher order boranes to pass therethrough; and (iv) implanting the ionized icosaborane (B20HX+) or one of the other higher order boranes into a workpiece. The step of vaporizing and ionizing the decaborane comprises the substeps of (i) vaporizing decaborane in a vaporizer (51) and (ii) ionizing the vaporized decaborane in an ionizer (53).

Abstract: A method of implanting ionized icosaborane (B20HX), triantaborane (B30HX), and sarantaborane (B40HX) into a workpiece is provided, comprising the steps of (i) vaporizing and ionizing decaborane in an ion source (50) to create a plasma; (ii) extracting ionized icosaborane, triantaborane, and sarantaborane (collectively “higher order boranes”) within the plasma through a source aperture (126) to form an ion beam; (iii) mass analyzing the ion beam with a mass analysis magnet (127) to permit ionized icosaborane (B20HX+) or one of the other higher order boranes to pass therethrough; and (iv) implanting the ionized icosaborane (B20HX+) or one of the other higher order boranes into a workpiece. The step of vaporizing and ionizing the decaborane comprises the substeps of (i) vaporizing decaborane in a vaporizer (51) and (ii) ionizing the vaporized decaborane in an ionizer (53).

Abstract: An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.

Abstract: An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.