Patents by Inventor Alexander Sergeevich SHOROKHOV

Alexander Sergeevich SHOROKHOV has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11789332
    Abstract: Provided is an apparatus for controlling a laser light propagation direction, including: a substrate configured to transmit at least a wavelength range of a laser light incident on the apparatus and deflected; and a metasurface disposed on the substrate, and comprising a plurality of nano-antennas, wherein each of the plurality of nano-antennas may include: a first contact and a second contact that are disposed apart from each other, and comprise an electrically conductive material to transmit at least the wavelength range of the laser light; and a semiconductor p-i-n heterostructure that disposed between the first contact and the second contact and comprises a p-region, an i-region and an n-region, which are disposed in parallel to the substrate.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: October 17, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexander Sergeevich Shorokhov, Maksim Vladimirovich Riabko, Kirill Igorevich Okhlopkov, Alexandr Igorevich Musorin
  • Publication number: 20210003902
    Abstract: Provided is an apparatus for controlling a laser light propagation direction, including: a substrate configured to transmit at least a wavelength range of a laser light incident on the apparatus and deflected; and a metasurface disposed on the substrate, and comprising a plurality of nano-antennas, wherein each of the plurality of nano-antennas may include: a first contact and a second contact that are disposed apart from each other, and comprise an electrically conductive material to transmit at least the wavelength range of the laser light; and a semiconductor p-i-n heterostructure that disposed between the first contact and the second contact and comprises a p-region, an i-region and an n-region, which are disposed in parallel to the substrate.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexander Sergeevich SHOROKHOV, Maksim Vladimirovich RIABKO, Kirill Igorevich OKHLOPKOV, Alexandr Igorevich MUSORIN
  • Patent number: 10831082
    Abstract: Provided is an apparatus for controlling a laser light propagation direction, including: a substrate configured to transmit at least a wavelength range of a laser light incident on the apparatus and deflected; and a metasurface disposed on the substrate, and comprising a plurality of nano-antennas, wherein each of the plurality of nano-antennas may include: a first contact and a second contact that are disposed apart from each other, and comprise an electrically conductive material to transmit at least the wavelength range of the laser light; and a semiconductor p-i-n heterostructure that disposed between the first contact and the second contact and comprises a p-region, an i-region and an n-region, which are disposed in parallel to the substrate.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: November 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexander Sergeevich Shorokhov, Maksim Vladimirovich Riabko, Kirill Igorevich Okhlopkov, Alexandr Igorevich Musorin
  • Publication number: 20190369458
    Abstract: Provided is an apparatus for controlling a laser light propagation direction, including: a substrate configured to transmit at least a wavelength range of a laser light incident on the apparatus and deflected; and a metasurface disposed on the substrate, and comprising a plurality of nano-antennas, wherein each of the plurality of nano-antennas may include: a first contact and a second contact that are disposed apart from each other, and comprise an electrically conductive material to transmit at least the wavelength range of the laser light; and a semiconductor p-i-n heterostructure that disposed between the first contact and the second contact and comprises a p-region, an i-region and an n-region, which are disposed in parallel to the substrate.
    Type: Application
    Filed: April 18, 2019
    Publication date: December 5, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Alexander Sergeevich SHOROKHOV, Maksim Vladimirovich RIABKO, Kirill Igorevich OKHLOPKOV, Alexandr Igorevich MUSORIN