Patents by Inventor Alexander Teverovsky

Alexander Teverovsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6231923
    Abstract: A method and apparatus for producing a coating or a near net shaped monolithic ceramic part by chemical vapor deposition, where the resultant coatings or parts consume less deposit material and require less machining. Mandrel substrates are closely designed for producing a specific, near net shaped final part, including negative relief features. Several of the mandrel substrates are mounted through centers in a spaced relationship on one or more rotable shafts as tooling for a chemical vapor deposition furnace. The tooling is installed in a chemical vapor deposition furnace so that the shafts are oriented perpendicular and the substrate planar surfaces are parallel to the flow pattern of reactant gases through the furnace. The shafts are rotated during the deposition process so that the mandrel substrates each receive a uniformly distributed ceramic deposit in the near net shape of the final part.
    Type: Grant
    Filed: August 17, 1999
    Date of Patent: May 15, 2001
    Assignee: Tevtech LLC
    Inventors: Alexander Teverovsky, James C. MacDonald, Lee Erich Burns
  • Patent number: 5746793
    Abstract: Reinforced ceramic unitary filters for air bags. The filters have a first layer having a high porosity, and a second layer having a low porosity. The first layer is preferably formed of low-cost ceramic grit sintered into a rigid mass, or a rigid reticulated ceramic. The second layer is formed of metal particles, and provides increased strength for the brittle ceramic. The metal particles may be formed onto the second layer and then sintered in place. Alternatively, the second layer may be formed separately and secured in position on the first layer. As a third alternative, the second layer may be applied by plasma arc deposition upon the first layer. The metal particles provide increased strength to the filter, as well as providing a fine filtering layer. The metal layer can also place the ceramic in compression to pre-load the ceramic layer for increased resistance to breakage.
    Type: Grant
    Filed: January 16, 1996
    Date of Patent: May 5, 1998
    Assignee: Morton International, Inc.
    Inventors: Linda M. Rink, Guy R. Letendre, Alexander Teverovsky, George C. Marjanski
  • Patent number: 5453233
    Abstract: A method and device are provided for reducing the loss of CVD manufactured parts due to cracking caused by mechanical stresses resulting from the mismatch of the coefficient of thermal expansion between the chemical vapor deposed part and the mandrel plate. The method and device provide a removable mandrel support which is removed after the chemical vapor deposition but prior to the cooling of the CVD part and the mandrel plates. This permits the CVD part to contract upon cooling without mechanical restriction, thus reduce cracking caused by contraction of the CVD part against a mold which does not contract substantially.
    Type: Grant
    Filed: April 5, 1993
    Date of Patent: September 26, 1995
    Assignee: CVD, Inc.
    Inventors: Alexander Teverovsky, James C. MacDonald
  • Patent number: 5383969
    Abstract: A process and apparatus for the manufacture of chemical vapor deposition deposited structures which comprises supplying a solid zinc metal continuously to a heated retort at a controlled rate. The retort is a body of refractory material having a top and a bottom and a traverse cross section which decreases from the top to the bottom of the retort. The zinc is melted, vaporized, and conveyed to a chemical vapor deposition zone defined by a number of heated mandrel plates where it is reacted with either hydrogen sulfide or hydrogen selenide to form a chemical vapor deposited structure. The process and apparatus provide for improved control over the evaporation rate of zinc and a reduction in the furnace volume needed to melt and vaporize the zinc.
    Type: Grant
    Filed: April 5, 1993
    Date of Patent: January 24, 1995
    Assignee: CVD, Inc.
    Inventors: Alexander Teverovsky, James C. MacDonald, Michael A. Pickering, Jeffery L. Kirsch
  • Patent number: 5354580
    Abstract: A process and apparatus for the manufacture of chemical vapor deposited silicon carbide which comprises conveying the reaction gases to a triangular chemical vapor deposition cell where material is deposited by chemical vapor deposition. The triangular cell provides a large surface area for deposition while occupying a minimum amount of the furnace floor surface area. The triangular cell has the added benefit in that deposited silicon carbide is of negligible thickness at the edges thereby permitting easy separation of material with a minimum of post deposition machining.
    Type: Grant
    Filed: June 8, 1993
    Date of Patent: October 11, 1994
    Assignee: CVD Incorporated
    Inventors: Jitendra S. Goela, Lee E. Burns, ALexander Teverovsky, James C. MacDonald