Patents by Inventor Alexander Veyster

Alexander Veyster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8684256
    Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: April 1, 2014
    Assignee: Component Re-Engineering Company, Inc.
    Inventors: Alfred Grant Elliot, Brent Donald Alfred Elliot, Frank Balma, Richard Erich Schuster, Dennis George Rex, Alexander Veyster
  • Patent number: 6682603
    Abstract: A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: January 27, 2004
    Assignee: Applied Materials Inc.
    Inventors: Sudhir Gondhalekar, Dongqing Li, Canfeng Lai, Zhengquan Tan, Steve H. Kim, Alexander Veyster
  • Publication number: 20030211757
    Abstract: A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate.
    Type: Application
    Filed: May 7, 2002
    Publication date: November 13, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Sudhir Gondhalekar, Dongqing Li, Canfeng Lai, Zhengquan Tan, Steve H. Kim, Alexander Veyster