Abstract: A method for the repair of a heater, or an electrostatic chuck, using a ceramic top layer joined with a hermetically sealed joint. The heater or electrostatic chuck may be machined down to remove a damaged top surface, and to allow for the joining of a new top surface. The new top pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

Abstract: A method for the joining of ceramic pieces into an assembly adapted to be used in semiconductor processing. The joined pieces are adapted to withstand the environments within a process chamber during substrate processing, chamber cleaning processes, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The ceramic pieces may be aluminum nitride and the pieces may be brazed with aluminum. The joint material is adapted to withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The joint is adapted to provide a hermetic seal across the joint. The joined pieces are adapted to be separated at a later time should rework or replacement of one of the pieces be desired.

Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the joining atmosphere, and other factors. The ceramic pieces may be on a non-diffusable type, such as aluminum nitride, alumina, beryllium oxide, and zirconia, and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

Abstract: A method for the joining of a ceramic shaft and a ceramic plate into an assembly, such as a heater, adapted to be used in semiconductor processing. The joined pieces are adapted to withstand the environments within a process chamber during substrate processing, chamber cleaning processes, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The ceramic pieces may be aluminum nitride and the pieces may be brazed with aluminum. The joint material is adapted to withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The joint is adapted to provide a hermetic seal across the joint. The joined pieces are adapted to be separated at a later time should rework or replacement of one of the pieces be desired.

Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

Abstract: A method for the joining of ceramic pieces with a hermetically sealed joint comprising brazing a continuous layer of joining material between the two pieces. The wetting and flow of the joining material is controlled by the selection of the joining material, the joining temperature, the time at temperature, the joining atmosphere, and other factors. The ceramic pieces may be aluminum nitride and the pieces may be brazed with an aluminum alloy under controlled atmosphere. The joint material is adapted to later withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck.

Abstract: A method for the joining of ceramic pieces into an assembly adapted to be used in semiconductor processing. The joined pieces are adapted to withstand the environments within a process chamber during substrate processing, chamber cleaning processes, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The ceramic pieces may be aluminum nitride and the pieces may be brazed with aluminum. The joint material is adapted to withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The joint is adapted to provide a hermetic seal across the joint. The joined pieces are adapted to be separated at a later time should rework or replacement of one of the pieces be desired.

Abstract: An electrostatic chuck with dielectric inserts provides conveyance of cooling gas while eliminating arc path to a workpiece surface. The electrostatic chuck includes the workpiece surface configured to support a substrate such as a semiconductor wafer, a plenum configured to carry a cooling gas, and a plurality of dielectric inserts configured to provide communication of the cooling gas between the plenum and the workpiece surface. The dielectric inserts may comprise a passage to provide the communication of the cooling gas. The dielectric inserts may be further configured to prevent line-of-sight between the workpiece surface of the electrostatic chuck and a conducting surface within the electrostatic chuck.

Abstract: A susceptor for high temperature semiconductor processing is provided. The susceptor includes a substrate support joined to a hollow shaft having a pair of ports to allow an inert gas to be purged through an internal volume of the shaft. Some embodiments of the susceptor include a chamber mount to support the shaft within a processing chamber and a chamber mount insert disposed within the chamber mount. In these embodiments the chamber mount insert includes the ports. The chamber mount insert can also include a thermocouple tube with a fitting to seal around the thermocouple and to impart an upward pressure to the thermocouple to keep the thermocouple properly seated within the substrate support. The chamber mount insert can also include electrical connectors with glass-to-metal seals.

Abstract: Susceptors are provided that employ layers of CTE-matching materials to reduce the stresses that otherwise lead to cracking and failure. Exemplary CTE-matching materials include metal alloys of aluminum and silicon that can be tailored to specific CTE values by adjusting the ratio of the elements. An exemplary susceptor comprises a CTE-matching material that accommodates the differences in the CTEs of a ceramic material and a thermal barrier layer disposed on opposite sides of the CTE-matching material. Methods are also provided for forming susceptors. These methods comprise assembling the components and bonding the assembly together, such as by diffusion bonding, to produce a susceptor that is a monolithic body.

Abstract: A susceptor including a substrate support and a conductor is provided. The substrate support includes a conductive element, a contact bonded to the conductive element, and a bushing. The conductor is disposed through the bushing and is bonded to the contact. The substrate support can also include a conductive spreader between the contact and the conductive element. A method for fabricating a susceptor is also provided. The method comprises forming a plate including a bushing preform, sintering or hot-pressing a conductive element and a contact between a ceramic layer and the plate to produce a substrate support, forming a conductor opening into the substrate support and through the bushing preform to the contact, and bonding a conductor into the conductor opening.

Abstract: A semiconductor wafer chuck for retaining a semiconductor wafer during semiconductor wafer processing in a semiconductor wafer processing system including a connector connecting DC chucking voltage and RF biasing power to an electrode embedded in the body of the chuck. The connector for the chuck includes two or more members joined by resilient banana connections. The connector may be adapted for use as a high temperature connector for an electrostatic chuck operated at an elevated temperature and such connector includes a thermal impedance for reducing the heat transferred from the chuck to the bottom of the connector.

Abstract: An apparatus for retaining a workpiece and a method of fabricating same. The apparatus contains an electrostatic chuck having a workpiece support surface. The workpiece support surface has protruded regions and non-protruded regions, where a total surface area of the protruded regions is less than a total surface area of the non-protruded regions. The apparatus contains a pedestal having a surface that supports a flex circuit. The topography of the chuck is formed by either machining the surface of the pedestal prior to adhering and conforming the flex circuit to the surface or sculpting the surface of an electrode within the flex circuit.