Patents by Inventor Alexandre Shirakawa
Alexandre Shirakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10128813Abstract: A bulk acoustic wave (BAW) resonator comprises: a first electrode; a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side; a piezoelectric layer disposed between the first and second electrodes, and an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the acoustic resonator; a bridge adjacent to a termination of the active area of the BAW resonator; and a discontinuity disposed in the bridge.Type: GrantFiled: April 21, 2016Date of Patent: November 13, 2018Assignee: Avago Technologies International Sales Pte. LimitedInventors: Robert Thalhammer, Alexandre Shirakawa, Thomas Faust, Phil Nikkel
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Patent number: 9917567Abstract: A ladder filter includes a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port. At least one of the series or shunt resonators include a bulk acoustic wave (BAW) resonator structure, which includes: a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and a second electrode disposed over the piezoelectric layer. The BAW resonator structure has an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for an undoped aluminum nitride piezoelectric layer.Type: GrantFiled: September 2, 2015Date of Patent: March 13, 2018Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Paul Bradley, Alexandre Shirakawa, Stefan Bader
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Publication number: 20170310303Abstract: A bulk acoustic wave (BAW) resonator comprises: a first electrode; a second electrode comprising a plurality of sides, wherein at least one of the sides is a connection side; a piezoelectric layer disposed between the first and second electrodes, and an acoustic reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer, wherein an overlap of the reflective element, the first electrode, the second electrode, and the piezoelectric layer defines an active area of the acoustic resonator; a bridge adjacent to a termination of the active area of the BAW resonator; and a discontinuity disposed in the bridge.Type: ApplicationFiled: April 21, 2016Publication date: October 26, 2017Inventors: Robert Thalhammer, Alexandre Shirakawa, Thomas Faust, Phil Nikkel
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Patent number: 9548438Abstract: An acoustic resonator structure comprises a piezoelectric layer having a first surface and a second surface, a first electrode disposed adjacent to the first surface, and a second electrode disposed adjacent to the second surface. The first electrode comprises a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance. The second electrode may be disposed between a substrate and the piezoelectric layer, and it may comprise a third conductive layer disposed adjacent to the piezoelectric layer and having a third acoustic impedance, and a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer and having a fourth acoustic impedance greater than the third acoustic impedance.Type: GrantFiled: March 31, 2014Date of Patent: January 17, 2017Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Stefan Bader, Alexandre Shirakawa, Kevin J. Grannen
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Patent number: 9525399Abstract: In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a cavity disposed in a substrate; a first electrode disposed over the cavity; a planarization layer disposed adjacent to the first electrode; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer.Type: GrantFiled: October 31, 2011Date of Patent: December 20, 2016Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Phil Nikkel, John Choy, Alexandre Shirakawa, Stefan Bader
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Patent number: 9490771Abstract: An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, a frame disposed within a main membrane region defined by an overlap between the first electrode, the piezoelectric layer, and the second electrode, and having an outer edge substantially aligned with a boundary of the main membrane region, and a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region.Type: GrantFiled: February 28, 2013Date of Patent: November 8, 2016Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, John Choy, Alexandre Shirakawa, Phil Nikkel
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Patent number: 9401692Abstract: A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a first piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a collar structure disposed around a perimeter of an active region defined by an overlap between the first electrode, the second electrode, and the piezoelectric layer.Type: GrantFiled: October 29, 2012Date of Patent: July 26, 2016Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Alexandre Shirakawa, John Choy, Phil Nikkel
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Publication number: 20150381144Abstract: A method of forming a film bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a piezoelectric layer on the first electrode, and forming a second electrode on the piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.Type: ApplicationFiled: September 2, 2015Publication date: December 31, 2015Inventors: Paul Bradley, Alexandre Shirakawa, Stefan Bader
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Patent number: 9203374Abstract: A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.Type: GrantFiled: June 2, 2011Date of Patent: December 1, 2015Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Phil Nikkel, Chris Feng, Alexandre Shirakawa, John Choy
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Patent number: 9154111Abstract: A method of forming a double bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a first piezoelectric layer on the first electrode, forming a second electrode on the first piezoelectric layer, forming a second piezoelectric layer on the second electrode, and forming a third electrode on the second piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.Type: GrantFiled: February 27, 2013Date of Patent: October 6, 2015Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Paul Bradley, Alexandre Shirakawa, Stefan Bader
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Publication number: 20150280100Abstract: An acoustic resonator structure comprises a piezoelectric layer having a first surface and a second surface, a first electrode disposed adjacent to the first surface, and a second electrode disposed adjacent to the second surface. The first electrode comprises a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance. The second electrode may be disposed between a substrate and the piezoelectric layer, and it may comprise a third conductive layer disposed adjacent to the piezoelectric layer and having a third acoustic impedance, and a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer and having a fourth acoustic impedance greater than the third acoustic impedance.Type: ApplicationFiled: March 31, 2014Publication date: October 1, 2015Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Stefan Bader, Alexandre Shirakawa, Kevin J. Grannen
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Patent number: 9148117Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode; an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator; and a bridge disposed between the first lower electrode of the first BAW resonator and the second upper electrode of the second BAW resonator. An inner raised region or an outer raised region, or both are disposed over the second upper electrode.Type: GrantFiled: June 24, 2011Date of Patent: September 29, 2015Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Alexandre Shirakawa, Chris Feng, Phil Nikkel, Stefan Bader
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Patent number: 9136818Abstract: In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator structure, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.Type: GrantFiled: March 29, 2011Date of Patent: September 15, 2015Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Alexandre Shirakawa, Stefan Bader
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Patent number: 9083302Abstract: In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity provided in a first layer and having a perimeter bordering an active region of the BAW resonator, a distributed Bragg reflector (DBR) bordering the cavity, wherein the first layer is one of the layers of the DBR; a first electrode disposed over the substrate; a first piezoelectric layer disposed over the first electrode; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode; a third electrode disposed over the second piezoelectric layer; and a bridge disposed between the first electrode and the third electrode.Type: GrantFiled: August 12, 2011Date of Patent: July 14, 2015Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Stefan Bader, Alexandre Shirakawa, Phil Nikkel
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Patent number: 9048812Abstract: A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.Type: GrantFiled: August 12, 2011Date of Patent: June 2, 2015Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Phil Nikkel, Jyrki Kaitila, John D. Larson, III, Alexandre Shirakawa
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Patent number: 8872604Abstract: A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.Type: GrantFiled: May 5, 2011Date of Patent: October 28, 2014Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Chris Feng, Alexandre Shirakawa, Stefan Bader
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Patent number: 8796904Abstract: In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.Type: GrantFiled: October 31, 2011Date of Patent: August 5, 2014Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Dariusz Burak, Kevin J. Grannen, John D. Larson, III, Alexandre Shirakawa
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Publication number: 20140118091Abstract: A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a first piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a collar structure disposed around a perimeter of an active region defined by an overlap between the first electrode, the second electrode, and the piezoelectric layer.Type: ApplicationFiled: October 29, 2012Publication date: May 1, 2014Applicant: Avago Technologies General IP (Singapore) Pte. LtdInventors: Dariusz BURAK, Alexandre SHIRAKAWA, John CHOY, Phil NIKKEL
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Patent number: 8508315Abstract: A signal processing device includes a first acoustic resonator, a second acoustic resonator disposed on the first acoustic resonator, and a coupling layer between the first and the second acoustic resonators. The first acoustic resonator has a first electrical impedance and a first resonance frequency and includes a first set of electrodes, and a first piezoelectric layer having a first thickness, disposed between the first set of electrodes. The second acoustic resonator has a second electrical impedance and a second resonance frequency, and includes a second set of electrodes, and a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes. The first electrical impedance at a passband frequency of the device substantially differs from the second electrical impedance at the passband frequency of the device. The first and second resonance frequencies are substantially different from each other.Type: GrantFiled: February 23, 2010Date of Patent: August 13, 2013Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Tiberiu Jamneala, Alexandre Shirakawa, Bernhard Koelle
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Patent number: 8461941Abstract: A bulk acoustic wave resonator has an adjustable resonance frequency. A piezoelectric element is provided having first and second electrodes. A switching element is provided in the form of a MEMS structure which is deformable between a first and second position. The switching element forms an additional electrode that is selectively disposed on top of, and in contact with, one of the first and second electrodes. This causes a total thickness of the electrode of the resonator to be changed resulting in a modification of the resonance frequency of the resonator.Type: GrantFiled: January 15, 2008Date of Patent: June 11, 2013Assignees: STMicroelectronics S.A., Centre National de la Recherche ScientifiqueInventors: Didier Belot, Andréia Cathelin, Yann Deval, Moustapha El Hassan, Eric Kerherve, Alexandre Shirakawa