Abstract: Devices are disclosed for providing heterojunction field effect transistor (HFETs) having improved performance and/or reduced noise generation. A gate electrode is over a portion of the active region and is configured to modulate a conduction channel in the active region of an HFET. The active region is in a semiconductor film between a source electrode and a drain electrode. A first passivation film is over the active region. An encapsulation film is over the first passivation film.

Abstract: A semiconductor device includes a heterostructure field effect transistor (HFET) having an active region in a semiconductor film between a source electrode and a drain electrode, where a gate electrode is over a portion of the active region and is configured to modulate a conduction channel in the active region. The semiconductor device also includes a first passivation film over the active region and an encapsulation film over the first passivation film. A first metal pattern is disposed on the encapsulation film, and the first metal pattern includes a shield wrap over the majority of the active region and is electrically connected to the source electrode. A gap is defined in the first metal pattern and the gap separates the shield wrap from a portion of the first metal pattern that is connected to the drain electrode, and the gap is not formed over the active region.

Abstract: Devices are disclosed for providing heterojunction field effect transistor (HFETs) having improved performance and/or reduced noise generation. A gate electrode is over a portion of the active region and is configured to modulate a conduction channel in the active region of an HFET. The active region is in a semiconductor film between a source electrode and a drain electrode. A first passivation film is over the active region. An encapsulation film is over the first passivation film. A first metal pattern on the encapsulation film includes a shield wrap over the majority of the active region and is electrically connected to the source electrode.

Abstract: The current invention introduces a modulated field element incorporated into the semiconductor device outside the controlling electrode and active areas. This element changes its conductivity and/or dielectric properties depending on the electrical potentials of the interface or interfaces between the modulated field element and the semiconductor device and/or incident electromagnetic radiation. The element is either connected to only one terminal of the semiconductor device, or not connected to any terminal of a semiconductor device nor to its active area(s). Such an element can be used as modulated field plate, or a part of a field plate, as a passivation layer or its part, as a guard ring or its part, as a smart field or charge control element or its part, as a feedback element or its part, as a sensor element or its part, as an additional electrode or its part, as an electromagnetic signal path or its part, and/or for any other functions optimizing or modernizing device performance.

Abstract: Devices are disclosed for providing heterojunction field effect transistor (HFETs) having improved performance and/or reduced noise generation. A gate electrode is over a portion of the active region and is configured to modulate a conduction channel in the active region of an HFET. The active region is in a semiconductor film between a source electrode and a drain electrode. A first passivation film is over the active region. An encapsulation film is over the first passivation film.

Abstract: A composite wafer includes a first substrate having a first vertical thickness and a top surface, the top surface being prepared in a state for subsequent semiconductor material epitaxial deposition. A carrier substrate is disposed beneath the first substrate. The carrier substrate has a second vertical thickness greater than the first vertical thickness. An interlayer bonds the first substrate to the carrier substrate.

Abstract: The present invention introduces the novel, improved design approach of the semiconductor devices that utilize the effect of carrier recombination, for example, to produce the electromagnetic radiation. The approach is based on the separate control over the injection of the electrons and holes into the active region of the device. As a result, better recombination efficiencies can be achieved, and the effect of the wavelength shift of the produced radiation can be eliminated. The devices according to the present invention outperform existing solid state light and electromagnetic radiation sources and can be used in any applications where solid state light sources are currently involved, as well as any applications future discovered.

Abstract: A device comprising a two-dimensional electron gas that includes an active region located in a portion of the electron gas is disclosed. The active region comprises an electron concentration less than an electron concentration of a set of non-active regions of the electron gas. The device includes a controlling terminal located on a first side of the active region. The device can comprise, for example, a field effect transistor (FET) in which the gate is located and used to control the carrier injection into the active region and define the boundary condition for the electric field distribution within the active region. The device can be used to generate, amplify, filter, and/or detect electromagnetic radiation of radio frequency (RF) and/or terahertz (THz) frequencies.

Abstract: Devices are disclosed for providing heterojunction field effect transistor (HFETs) having improved performance and/or reduced noise generation. A gate electrode is over a portion of the active region and is configured to modulate a conduction channel in the active region of an HFET. The active region is in a semiconductor film between a source electrode and a drain electrode. A first passivation film is over the active region. An encapsulation film is over the first passivation film.

Abstract: A composite wafer includes a first substrate having a first vertical thickness and a top surface, the top surface being prepared in a state for subsequent semiconductor material epitaxial deposition. A carrier substrate is disposed beneath the first substrate. The carrier substrate has a second vertical thickness greater than the first vertical thickness. An interlayer bonds the first substrate to the carrier substrate.

Abstract: A solution is provided in which one or more of a plurality of light elements is alternately operated as a light emitting element and a light detecting element. For example, a system can operate a light element as a light detecting element while operating at least one other light element as a light emitting element in order to manage operation of the light elements to generate light having a set of desired attributes, evaluating an operating condition of the other light element(s), and/or the like.

Abstract: A field effect transistor (FET) including a monolithically integrated gate control circuit element can be included in, for example, a radio frequency switch circuit. For example, the FET can be included as a series and/or shunt FET of a radio frequency coplanar waveguide circuit. The widths of the series and shunt FETs of a switch circuit can be selected to provide a target isolation and/or a target insertion loss for a target operating frequency.

Abstract: A switch circuit is provided that includes at least one main switching device and at least one shunt switching device. Each main switching device is connected in series with a conductor that carries an RF signal between an input circuit and an output circuit. Each shunt switching device is connected between a controlling terminal of the main switching device and a high frequency ground. The switch circuit can provide substantially improved OFF state isolation over other approaches.

Abstract: Ultraviolet radiation is shone within an area and detected. The detected ultraviolet radiation is monitored over a period of time to determine a set of biological activity dynamics for the area. Ultraviolet radiation detected during a calibration period can be used to provide a baseline with which analysis of subsequently detected ultraviolet radiation is compared and analyzed. When the presence of biological activity is determined within the area, ultraviolet radiation and/or one or more other approaches can be utilized to suppress the biological activity.

Abstract: The present invention introduces the novel, improved design approach of the semiconductor devices that utilize the effect of carrier recombination, for example, to produce the electromagnetic radiation. The approach is based on the separate control over the injection of the electrons and holes into the active region of the device. As a result, better recombination efficiencies can be achieved, and the effect of the wavelength shift of the produced radiation can be eliminated. The devices according to the present invention outperform existing solid state light and electromagnetic radiation sources and can be used in any applications where solid state light sources are currently involved, as well as any applications future discovered.

Abstract: The current invention provides the design of the field effect transistor with lateral channel suitable for high voltage switching. In such a transistor, the electrical charge stored in the high electric field region has to vary as the transistor switches from ON to OFF state and back. The invention provides the method of calculating the necessary recharging path parameters based on the material parameters of the FET and desired blocking voltage, ON state resistance and switching speed. The invention can be used in power electronics by providing circuits and parts, for example, for electrical power distribution between power plant customers, for automotive, craft and space applications and many other applications where high voltage in excess of 400-600 V is involved.

Abstract: A field effect transistor (FET) including a monolithically integrated gate control circuit element can be included in, for example, a radio frequency switch circuit. For example, the FET can be included as a series and/or shunt FET of a radio frequency coplanar waveguide circuit. The widths of the series and shunt FETs of a switch circuit can be selected to provide a target isolation and/or a target insertion loss for a target operating frequency.

Abstract: A solution is provided in which one or more of a plurality of light elements is alternately operated as a light emitting element and a light detecting element. For example, a system can operate a light element as a light detecting element while operating at least one other light element as a light emitting element in order to manage operation of the light elements to generate light having a set of desired attributes, evaluating an operating condition of the other light element(s), and/or the like.

Abstract: A field effect transistor that can be operated as a low voltage Class FN radio frequency (RF) amplifier with harmonic tuning is provided. The field effect transistor includes a common electrode, a gate, and multiple separate electrodes. The common electrode can comprise a source or drain, while the separate electrodes can comprise drains or sources, respectively. The gate can be profiled in a manner that forms multiple gate sections, each having a unique gate length within the gate sections. Each separate electrode can correspond to one of the plurality of gate sections. When operated as a Class FN RF amplifier with a linear harmonic input, the output signal will comprise a non-linear square wave with sharp fronts and relatively flat peak states.

Abstract: Ultraviolet radiation is shone within an area and detected. The detected ultraviolet radiation is monitored over a period of time to determine a set of biological activity dynamics for the area. Ultraviolet radiation detected during a calibration period can be used to provide a baseline with which analysis of subsequently detected ultraviolet radiation is compared and analyzed. When the presence of biological activity is determined within the area, ultraviolet radiation and/or one or more other approaches can be utilized to suppress the biological activity.