Abstract: Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

Abstract: A method for managing optical transceivers includes obtaining laser measurements for a laser operating in an optical transceiver in a network device, obtaining a failure profile for the laser, making a first determination that the laser measurements match the failure profile, and based on the first determination, initiating a remediation action for the optical transceiver.

Abstract: A method for managing optical transceivers includes obtaining laser measurements for a laser operating in an optical transceiver in a network device, obtaining a failure profile for the laser, making a first determination that the laser measurements match the failure profile, and based on the first determination, initiating a remediation action for the optical transceiver.

Abstract: Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

Abstract: Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

Abstract: A semiconductor optical amplifier (SOA) receives a multiwavelength input optical signal and amplifies the multiwavelength input optical signal to generate an amplified multiwavelength optical signal. A waveguide is coupled to receive the amplified multiwavelength optical signal. The waveguide includes an enhanced chromatic dispersion segment configured to increase chromatic dispersion experienced by the multiwavelength optical signal as the multiwavelength optical signal propagates through the waveguide and is amplified by the SOA. This increase in chromatic dispersion reduces noise, such as four-wave mixing noise, in the amplified multiwavelength optical signal.

Abstract: Embodiments of the present disclosure are directed to a semiconductor optical amplifier including a semiconductor-based gain medium configured to receive a drive current and a variable-width waveguide coupled to the in the semiconductor-based gain medium, the variable-width waveguide including a plurality of narrow width regions and a plurality of wide width regions positioned alternately along a longitudinal axis of the waveguide. The variable-width waveguide further includes a plurality of transition regions having an adiabatically varying widths. Each transition region connects adjacent ones of the plurality of narrow width and width regions and the waveguide has a reduced drive current density in the plurality of wide width regions relative to the drive current density in the plurality of narrow width regions.

Abstract: Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

Abstract: Embodiments of the present disclosure include optical transmitters and transceivers with improved reliability. In some embodiments, the optical transmitters are used in network devices, such as in conjunction with a network switch. In one embodiment, lasers are operated at low power to improve reliability and power consumption. The output of the laser may be modulated by a non-direct modulator and received by integrated optical components, such as a modulator and/or multiplexer. The output of the optical components may be amplified by a semiconductor optical amplifier (SOA). Various advantageous configurations of lasers, optical components, and SOAs are disclosed. In some embodiments, SOAs are configured as part of a pluggable optical communication module, for example.

Abstract: A method for managing optical transceivers includes obtaining laser measurements for a laser operating in an optical transceiver in a network device, obtaining a failure profile for the laser, making a first determination that the laser measurements match the failure profile, and based on the first determination, initiating a remediation action for the optical transceiver.

Abstract: A VCSEL illuminator module includes a module forming a physical cavity having electrical contacts positioned on an inner surface of the module that feed through the module to electrical contacts positioned on an outer surface of the module. A VCSEL device is positioned on the inner surface module and includes electrical contacts that are electrically connected to the electrical contacts on the inner surface of the module. The VCSEL device generates an optical beam when current is applied to the electrical contacts. An optical element is positioned adjacent to an emitting surface of the VCSEL device and is configured to modify the optical beam generated by the VCSEL device.

Abstract: A VCSEL illuminator module includes a module forming a physical cavity having electrical contacts positioned on an inner surface of the module that feed through the module to electrical contacts positioned on an outer surface of the module. A VCSEL device is positioned on the inner surface module and includes electrical contacts that are electrically connected to the electrical contacts on the inner surface of the module. The VCSEL device generates an optical beam when current is applied to the electrical contacts. An optical element is positioned adjacent to an emitting surface of the VCSEL device and is configured to modify the optical beam generated by the VCSEL device.

Abstract: Waveguide designs and fabrication methods provide adiabatic waveguide eigen mode conversion and can be applied to monolithic vertical integration of active and passive elements in PICs. An advantage of the designs and methods is a simple fabrication procedure with only a single etching step in combination with subsequent well-controllable selective oxidation. As a result, improved manufacturability and reliability can be achieved.

Abstract: A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.

Abstract: Waveguide designs and fabrication methods provide adiabatic waveguide eigen mode conversion and can be applied to monolithic vertical integration of active and passive elements in PICs. An advantage of the designs and methods is a simple fabrication procedure with only a single etching step in combination with subsequent well-controllable selective oxidation. As a result, improved manufacturability and reliability can be achieved.

Abstract: An optoelectronic module includes a semiconductor structure with a substrate having a first side and a second side, a first layered structure deposited on the first side, and a second layered structure deposited on the second side. The optoelectronic module also includes driver circuitry fabricated of the first layered structure and a diode laser fabricated of the second layered structure. The driver circuitry produces a drive electrical signal supplied to the diode laser, and the diode laser produces an optical output in response to the drive electrical signal. In a preferred embodiment, the optoelectronic module also includes a temperature-sensitive element fabricated of the first or the second layered structure. The temperature-sensitive element produces a temperature dependent control signal related to the diode laser temperature.

Abstract: An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 1.15-1.35 ?m. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than 3V. In addition, the light-emitting diode preferably has an intensity of maxima, other than the main maximum of the emission spectrum, of less than 1% of an intensity of the main maximum. This combination of parameters makes such a device useful as an inexpensive optical source for various applications.

Abstract: An optical transmission system includes a laser, a transmitter and a receiver. The laser is capable of operating on an inhomogeneously broadened optical transition of the active region of the laser. A spectral bandwidth of an output lasing spectrum of the laser is greater than 5 nm and a spectral power density of the laser is greater than 2 mW/nm such that an optical power of the laser is greater than 10 mW. The laser provides a plurality of optical signals at different wavelengths. The transmitter is capable of providing modulation to each lasing wavelength independently and the receiver is capable of providing detection to each lasing wavelength independently.

Abstract: A semiconductor laser comprises an electrically isolated active section and at least one noise reducing section and operates on a ground state transition of a quantum dot array having inhomogeneous broadening greater than 10 nm. The laser preferably emits more than 10 optical modes such that a total relative intensity noise of each optical mode is less than 0.2% in the 0.001 GHz to 10 GHz range. The spectral power density is preferably higher than 2 mW/nm. An optical transmission system and a method of operating a quantum dot laser with low relative intensity noise of each optical mode are also disclosed.

Abstract: An efficient long-wavelength light-emitting diode has a resonant-cavity design. The light-emitting diode preferably has self-organized (In,Ga)As or (In,Ga)(As,N) quantum dots in the light-emitting active region, deposited on a GaAs substrate. The light-emitting diode is capable of emitting in a long-wavelength spectral range of preferably 1.15-1.35 ?m. The light-emitting diode also has a high efficiency of preferably at least 6 mW and more preferably at least 8 mW at an operating current of less than 100 mA and a low operating voltage of preferably less than 3V. In addition, the light-emitting diode preferably has an intensity of maxima, other than the main maximum of the emission spectrum, of less than 1% of an intensity of the main maximum. This combination of parameters makes such a device useful as an inexpensive optical source for various applications.