Abstract: The invention relates to a method for compiling a source code to a program code, the method comprising: providing a pattern graph based on the source code, the pattern graph corresponding to an intermediate representation of the source code according to a set of rules in a first programming language, wherein the set of rules comprises a specific replacement rule directing a pattern graph to be replaced by a corresponding replacement graph assigned to the pattern graph, replacing the pattern graph by the replacement graph assigned to the pattern graph, and generating the program code based on the replacement graph.

Abstract: The invention relates to a method for compiling a source code to a program code, the method comprising: providing a pattern graph based on the source code, the pattern graph corresponding to an intermediate representation of the source code according to a set of rules in a first programming language, wherein the set of rules comprises a specific replacement rule directing a pattern graph to be replaced by a corresponding replacement graph assigned to the pattern graph, replacing the pattern graph by the replacement graph assigned to the pattern graph, and generating the program code based on the replacement graph.

Abstract: According to the present invention, a composite semiconductor substrate (1) for epitaxial growth of a compound semiconductor material (1) comprises a ceramic semiconductor support layer (4), and a single crystalline epitaxial layer (3) formed of the compound semi-conductor material on the ceramic semiconductor support layer.

Abstract: A semiconductor structure with low mechanical stresses, formed of nitrides of group III metals on a (0001) oriented foreign substrate (1) and a method for reducing internal mechanical stresses in a semiconductor structure formed of nitrides of group III metals on a (0001) oriented foreign substrate (1). The method comprises the steps of; growing nitride on the foreign substrate (1) to form a first nitride layer (2); patterning the first nitride layer (2) by selectively removing volumes of it to a predetermined depth from the upper surface of the first nitride layer (2), for providing relaxation of mechanical stress ? in the remaining portions of the layer between the removed volumes; and growing, on the first nitride layer (2), additional nitride until a continuous second nitride layer (8) is formed, the second nitride layer (8) enclosing voids (7) from the removed volumes under the second nitride layer (8) inside the semiconductor structure.