Abstract: The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

Abstract: The method for producing non-core beta silicon carbide fibers includes four steps. The first step is spinning of multifilament polymeric fiber by melt-extrusion of polycarbosilane. The second step is thermooxidative cross-linking for which the produced spun polymeric fibers are cured in an oxidation furnace at a temperature of 175-250 degrees C. at a heating rate of 3-10 degrees C./h until their weight is increased by 6-15%. The third step is carbonization of the produced cured polymeric fibers with the conversion into the ceramic phase. The fourth step is finishing of the produced beta silicon carbide fiber. The effect of the invention is producing non-core silicon carbide fibers, improving their strength performance, improving resistance to high temperatures and their high creep resistance, stable fiber properties, optimal average diameter of fibers, absence of foreign impurities in the fiber composition.

Abstract: The method for producing non-core beta silicon carbide fibers includes four steps. The first step is spinning of multifilament polymeric fiber by melt-extrusion of polycarbosilane. The second step is thermooxidative cross-linking for which the produced spun polymeric fibers are cured in an oxidation furnace at a temperature of 175-250 degrees C. at a heating rate of 3-10 degrees C./h until their weight is increased by 6-15%. The third step is carbonization of the produced cured polymeric fibers with the conversion into the ceramic phase. The fourth step is finishing of the produced beta silicon carbide fiber. The effect of the invention is producing non-core silicon carbide fibers, improving their strength performance, improving resistance to high temperatures and their high creep resistance, stable fiber properties, optimal average diameter of fibers, absence of foreign impurities in the fiber composition.

Abstract: The end plug includes two parts in the form of coaxial cylinders having different diameters, the diameter of the part configured to be arranged inside the cladding is less than the cladding inner diameter by 0.06-0.08 and 2-3 mm, respectively, for interposing brazes of different types. An end plug according to the third variant is composed of three parts in the form of three successively arranged coaxial cylinders having different diameters, the diameter of the two parts configured to be arranged inside the cladding being less than the cladding inner diameter by 0.06-0.08 and 2-3 mm, respectively, for interposing brazes of two types simultaneously. The effects of the invention are safety for the environment, possibility of using the developed end plugs as an alternative for replacing plugs used in various reactors, proposal of a simplified method for manufacturing an end plug, improvements in mechanical and thermophysical properties of end plugs.

Abstract: The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.

Abstract: A method of creating a zone of high-gradient magnetic field in a Kittel open domain structure is disclosed. The method is based on a magnetic system of an open domain structure type and is embodied in the form of two substantially rectangular constant magnets which are mated by the side faces thereof, whose magnetic field polarities are oppositely directed and the magnetic anisotropy is greater than the magnetic induction of the materials thereof. The magnets are mounted on a common base comprising a plate which is made of a non-retentive material and mates with the lower faces of the magnets, thin plates which are made of a non-retentive material, are placed on the top faces of the magnets and forms a gap arranged above the top edges of the magnets mated faces. A nonmagnetic substrate for separated material is located above the gap.

Abstract: A method of creating a zone of high-gradient magnetic field in a Kittel open domain structure is disclosed. The method is based on a magnetic system of an open domain structure type and is embodied in the form of two substantially rectangular constant magnets which are mated by the side faces thereof, whose magnetic field polarities are oppositely directed and the magnetic anisotropy is greater than the magnetic induction of the materials thereof. The magnets are mounted on a common base comprising a plate which is made of a non-retentive material and mates with the lower faces of the magnets, thin plates which are made of a non-retentive material, are placed on the top faces of the magnets and forms a gap arranged above the top edges of the magnets mated faces. A nonmagnetic substrate for separated material is located above the gap.

Abstract: The invention relates to a magnetic separation device and is used for separating paramagnetic substances from diamagnetic substances, the paramagnetic substances according to the paramagnetic susceptibility thereof and the diamagnetic substances according to the diamagnetic susceptibility thereof. Said invention can be used for electronics, metallurgy and chemistry, for separating biological objects and for removing heavy metals and organic impurities from water, etc. The inventive device is based on a magnetic system of an open domain structure type and is embodied in the form of two substantially rectangular constant magnets (1, 2) which are mated by the side faces thereof, whose magnetic field polarities are oppositely directed and the magnetic anisotropy is greater than the magnetic induction of the materials thereof.

Abstract: The invention relates to a magnetic separation device and is used for separating paramagnetic substances from diamagnetic substances, the paramagnetic substances according to the paramagnetic susceptibility thereof and the diamagnetic substances according to the diamagnetic susceptibility thereof. Said invention can be used for electronics, metallurgy and chemistry, for separating biological objects and for removing heavy metals and organic impurities from water, etc. The inventive device is based on a magnetic system of an open domain structure type and is embodied in the form of two substantially rectangular constant magnets (1, 2) which are mated by the side faces thereof, whose magnetic field polarities are oppositely directed and the magnetic anisotropy is greater than the magnetic induction of the materials thereof.