Abstract: In one embodiment, the invention relates to a semiconductor laser comprising a semiconductor layer sequence for generating laser radiation. According to the invention, the semiconductor layer sequence has a geometric structuring on a top side. A resonator is located in the semiconductor layer sequence and is delimited by opposing facets, wherein the facets contain optically active resonator end faces. The structuring ends spaced apart from the facets. The resonator end faces are spaced apart from material removals from the semiconductor layer sequence.

Abstract: In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, and a thermal decoupling structure in a region between two adjacent individual emitters, wherein the decoupling structure includes an electrically conductive cooling element located on the contact side and completely covering a contiguous cooling region of the contact side, wherein the cooling element is completely electrically isolated from the semiconductor layer sequence and thermally coupled to the semiconductor layer sequence along the cooling region, and wherein the cooling region has a width, measured along the lateral transver

Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

Abstract: The invention provides coating compositions comprising at least one compound (A) containing hydroxyl groups, at least one compound (B) containing isocyanate groups, at least 5.0% by weight, based on the nonvolatile constituents of the coating composition, of at least one amino resin (C), wherein the coating composition comprises at least one unsaturated, cyclic, sterically hindered amine (D) and the coating composition contains less than 2.5 mol % of hydrolyzable silane groups, based on the sum of hydroxyl groups, isocyanate groups, and hydrolyzable silane groups. The invention additionally relates to multistage coating processes using these coating compositions and also to the use of the coating compositions as clearcoat material and to the use of the coating process for automotive OEM finishing and automotive refinish.

Abstract: The invention provides coating compositions comprising at least one compound (A) containing hydroxyl groups, at least one compound (B) containing isocyanate groups, at least 5.0% by weight, based on the nonvolatile constituents of the coating composition, of at least one amino resin (C), wherein the coating composition comprises at least one unsaturated, cyclic, sterically hindered amine (D) and the coating composition contains less than 2.5 mol % of hydrolyzable silane groups, based on the sum of hydroxyl groups, isocyanate groups, and hydrolyzable silane groups. The invention additionally relates to multistage coating processes using these coating compositions and also to the use of the coating compositions as clearcoat material and to the use of the coating process for automotive OEM finishing and automotive refinish.