Abstract: Various methods and devices for ultrasensitive infrared photodetection, infrared imaging, and other optoelectronic applications using the plasmon assisted thermoelectric effect in graphene are described. Infrared detection by the photo-thermoelectric uses the generation of a temperature gradient (?T) for the efficient collection of the generated hot-carriers. An asymmetric plasmon-induced hot-carrier Seebeck photodetection scheme at room temperature exhibits a remarkable responsivity along with an ultrafast response in the technologically relevant 8-12 ?m band. This is achieved by engineering the asymmetric electronic environment of the generated hot carriers on chemical vapor deposition (CVD) grown large area nanopatterned monolayer graphene, which leads to a record ?T across the device terminals thereby enhancing the photo-thermoelectric voltage beyond the theoretical limit for graphene. The results provide a strategy for uncooled, tunable, multispectral infrared detection.

Abstract: In some embodiments, an apparatus includes a wireless access point controller configured to receive information associated with a topology of a network including information associated with which access switch from a set of access switches each virtual local area network (VLAN) from a set of VLANs is associated. The wireless access point controller is configured to associate each VLAN from the set of VLANs with a unique tunnel identifier from a set of tunnel identifiers. The wireless access point controller is configured to provide each wireless access point from a set of wireless access points control information including the set of tunnel identifiers such that a wireless access point from the set of wireless access points can send a data packet received from a wireless device to an access switch from the set of access switches associated with a destination VLAN from the set of VLANs using the tunnel identifier associated with the destination VLAN.