Abstract: A lid for a container is provided and includes a lid body that is configured to be securely coupled to the container. The lid body has a base portion and a flange portion that engages the container. The base portion has an integral upstanding candle holder that extends upwardly from the base portion and includes a hollow center section configured to receive and hold a candle in an upright position.

Abstract: A lid for a container is provided and includes a lid body that is configured to be securely coupled to the container. The lid body has a base portion and a flange portion that engages the container. The base portion has an integral upstanding candle holder that extends upwardly from the base portion and includes a hollow center section configured to receive and hold a candle in an upright position.

Abstract: A beverage plug for insertion into a drinking opening of a container lid includes an elongated stick having a first end and an opposite second end with an integral plug portion being formed between the first end and the second end and being configured for plugging the drinking opening. A candle holder is integrally formed at the first end and comprises a cup-shaped structure for receiving and holding a candle.

Abstract: In one embodiment of the invention, contact patterning may be divided into two or more passes which may allow designers to control the gate height critical dimension relatively independent from the contact top critical dimension.

Abstract: In one embodiment of the invention, contact patterning may be divided into two or more passes which may allow designers to control the gate height critical dimension relatively independent from the contact top critical dimension.

Abstract: In one embodiment of the invention, contact patterning may be divided into two or more passes which may allow designers to control the gate height critical dimension relatively independent from the contact top critical dimension.

Abstract: A method to form transistor contacts begins with providing a transistor that includes a gate stack and first and second diffusion regions formed on a substrate, and a dielectric layer formed atop the gate stack and the diffusion regions. A first photolithography process forms first and second diffusion trench openings for the first and second diffusion regions. A sacrificial layer is then deposited into the first and second diffusion trench openings. Next, a second photolithography process forms a gate stack trench opening for the gate stack and a local interconnect trench opening coupling the gate stack trench opening to the first diffusion trench opening. The second photolithography process is carried out independent of the first photolithography process. The sacrificial layer is then removed and a metallization process is carried out to fill the first and second diffusion trench openings, the gate stack trench opening, and the local interconnect trench opening with a metal layer.