Patents by Inventor Allan B. Wiesnoski
Allan B. Wiesnoski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10049859Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: GrantFiled: July 8, 2010Date of Patent: August 14, 2018Assignee: Aixtron SEInventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Patent number: 9831466Abstract: A method is disclosed for forming multi-layered structures on polymeric or other materials that provide optical functions or protect underlying layers from exposure to oxygen and water vapor. Novel devices are also disclosed that may include both multi-layered protective structures and AMOLED display, OLED lighting or photovoltaic devices. The protective multi-layer structure itself may be made by depositing successively on a substrate at least three very thin layers of material with different density or composition. In some methods for deposition of such film, the layers are deposited by varying the energy of ion bombardment per unit thickness of the film. Any layer of the structure may include one or more of the materials: silicon nitride, silicon oxide, silicon oxynitride, or metallic nitride or oxide. Specific commercial applications that benefit from this include manufacturing of photovoltaic devices or organic light emitting diode devices (OLED) including lighting and displays.Type: GrantFiled: June 30, 2014Date of Patent: November 28, 2017Assignee: AIXTRON SEInventors: Stephen E. Savas, Allan B. Wiesnoski, Carl Galewski
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Patent number: 9443702Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: GrantFiled: June 9, 2015Date of Patent: September 13, 2016Assignee: Aixtron SEInventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Patent number: 9359674Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: GrantFiled: July 1, 2014Date of Patent: June 7, 2016Assignee: Aixtron, Inc.Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski
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Publication number: 20160111684Abstract: A method is disclosed for forming multi-layered structures on polymeric or other materials that provide optical functions or protect underlying layers from exposure to oxygen and water vapor. Novel devices are also disclosed that may include both multi-layered protective structures and AMOLED display, OLED lighting or photovoltaic devices. The protective multi-layer structure itself may be made by depositing successively on a substrate at least three very thin layers of material with different density or composition. In some methods for deposition of such film, the layers are deposited by varying the energy of ion bombardment per unit thickness of the film Any layer of the structure may include one or more of the materials: silicon nitride, silicon oxide, silicon oxynitride, or metallic nitride or oxide. Specific commercial applications that benefit from this include manufacturing of photovoltaic devices or organic light emitting diode devices (OLED) including lighting and displays.Type: ApplicationFiled: June 30, 2014Publication date: April 21, 2016Inventors: Stephen E. SAVAS, Allan B. WIESNOSKI
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Publication number: 20150270109Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: June 9, 2015Publication date: September 24, 2015Inventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Patent number: 9096933Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: GrantFiled: April 15, 2014Date of Patent: August 4, 2015Assignee: Aixtron, Inc.Inventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Patent number: 9096932Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: GrantFiled: April 14, 2014Date of Patent: August 4, 2015Assignee: Aixtron, Inc.Inventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20140314965Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: ApplicationFiled: July 1, 2014Publication date: October 23, 2014Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski
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Publication number: 20140220262Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: April 15, 2014Publication date: August 7, 2014Applicant: PLASMASI, INC.Inventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20140212601Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: April 14, 2014Publication date: July 31, 2014Applicant: PlasmaSi, Inc.Inventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Patent number: 8765232Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: GrantFiled: January 10, 2012Date of Patent: July 1, 2014Assignee: PlasmaSi, Inc.Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski
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Patent number: 8697197Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: GrantFiled: July 8, 2010Date of Patent: April 15, 2014Assignee: Plasmasi, Inc.Inventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20120225218Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: ApplicationFiled: January 10, 2012Publication date: September 6, 2012Applicant: PlasmaSi, Inc.Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski
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Publication number: 20110005682Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: July 8, 2010Publication date: January 13, 2011Inventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20110005681Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: July 8, 2010Publication date: January 13, 2011Inventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20110006040Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: July 8, 2010Publication date: January 13, 2011Inventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh