Abstract: A regulated high side gate driver circuit for power transistors includes: a gate driver having a high side positive supply voltage port and a high side negative supply voltage port, and a floating voltage regulator. The floating voltage regulator includes: a positive regulator input, connectable to a high side DC voltage supply; a regulated DC voltage output; a negative regulator input; a DC reference voltage generator configured to generate a DC reference voltage; and a regulation capacitor connected between positive and negative terminals of the DC reference voltage generator, and configured to suppress noise and ripple within the generated DC reference voltage. The negative regulator input is connected to the high side negative supply voltage port and the regulated DC voltage output is connected to the high side positive supply voltage port of the gate driver.

Abstract: The present invention relates in a first aspect to a regulated high side gate driver circuit for power transistors. The regulated high side gate driver circuit comprises a gate driver powered by a floating voltage regulator which comprises a linear regulating device.

Abstract: A regulated high side gate driver circuit for power transistors. The regulated high side gate driver circuit includes a gate driver powered by a floating voltage regulator, which includes a linear regulating device.

Abstract: An integrated high side gate driver structure for driving a power transistor. The structure includes a semiconductor substrate having a first polarity semiconductor material in which a first well diffusion including a second polarity semiconductor material is formed, An outer wall of the first well diffusion is abutted to the substrate. A second well diffusion, having first polarity semiconductor material, is arranged inside the first well diffusion such that an outer wall of the second well diffusion abuts an inner wall of the first well diffusion. The structure includes a gate driver having high side positive and negative supply voltage ports, and a driver input and output. The gate driver includes a transistor driver in the second well diffusion such that control and output terminals of the transistor driver are coupled to the driver input and output, respectively.

Abstract: An integrated high side gate driver structure for driving a power transistor. The structure includes a semiconductor substrate having a first polarity semiconductor material in which a first well diffusion including a second polarity semiconductor material is formed. An outer wall of the first well diffusion is abutted to the substrate. A second well diffusion, having first polarity semiconductor material, is arranged inside the first well diffusion such that an outer wall of the second well diffusion abuts an inner wall of the first well diffusion. The structure includes a gate driver having high side positive and negative supply voltage ports, and a driver input and output. The gate driver includes a transistor driver in the second well diffusion such that control and output terminals of the transistor driver are coupled to the driver input and output, respectively.

Abstract: The present invention relates in a first aspect to a regulated high side gate driver circuit for power transistors. The regulated high side gate driver circuit comprises a gate driver powered by a floating voltage regulator which comprises a linear regulating device.

Abstract: A multiphase pulse width modulator (PWM) producing N mutually phase shifted PWM signals, which is well-suited for class D audio amplifier applications. The multiphase PWM includes (a) N+1 (N ?2) analog triangular waveform generators producing N+1 mutually phase shifted triangular waveforms, and (b) N+1 comparators each having a first input coupled to each of the N+1 triangular waveforms and a second input coupled to an audio signal to generate N+1 mutually phase shifted PWM phase signals. A crosspoint switch includes N+1 inputs coupled to the N+1 PWM phase signals, and N outputs to supply the N PWM signals. A crosspoint switch controller selectively connects each of the N+1 inputs to each of the N outputs for a duration of a cycle time in a time sequence to simultaneously generate the N PWM signals such that each signal has interleaved time segments of the N+1 PWM phase signals.

Abstract: The present invention relates to an integrated high side gate driver structure for driving a power transistor. The high side gate driver structure comprises a semiconductor substrate comprising a first polarity semiconductor material in which a first well diffusion comprising a second polarity semiconductor material is formed. A peripheral outer wall of the first well diffusion is abutted to the semiconductor substrate. A second well diffusion, comprising first polarity semiconductor material, is arranged inside the first well diffusion such that an outer peripheral wall of the second well diffusion is abutted to an inner peripheral wall of the first well diffusion.

Abstract: A multiphase pulse width modulator (PWM) producing N mutually phase shifted PWM signals, which is well-suited for class D audio amplifier applications. The multiphase PWM includes (a) N+1 (N?2) analog triangular waveform generators producing N+1 mutually phase shifted triangular waveforms, and (b) N+1 comparators each having a first input coupled to each of the N+1 triangular waveforms and a second input coupled to an audio signal to generate N+1 mutually phase shifted PWM phase signals. A crosspoint switch includes N+1 inputs coupled to the N+1 PWM phase signals, and N outputs to supply the N PWM signals. A crosspoint switch controller selectively connects each of the N+1 inputs to each of the N outputs for a duration of a cycle time in a time sequence to simultaneously generate the N PWM signals such that each signal has interleaved time segments of the N+1 PWM phase signals.

Abstract: To reduce pop or click during turn-on, a method and apparatus are provided. Initially, a plurality of current sources in the amplifier is actuated. The amplifier is transitioned from an off-state to an on-state in a class B amplifier mode by de-coupling each input node of an output stage of the amplifier from a voltage rail, and the amplifier is transitioned from the on-state in the class B amplifier mode to an on-state in a class AB amplifier mode by actuating at least a portion of an intermediate circuit in the amplifier.

Abstract: To reduce pop or click during turn-on, a method and apparatus are provided. Initially, a plurality of current sources in the amplifier is actuated. The amplifier is transitioned from an off-state to an on-state in a class B amplifier mode by de-coupling each input node of an output stage of the amplifier from a voltage rail, and the amplifier is transitioned from the on-state in the class B amplifier mode to an on-state in a class AB amplifier mode by actuating at least a portion of an intermediate circuit in the amplifier.