Abstract: A variety of illumination devices are disclosed that are configured to manipulate light provided by one or more light-emitting elements (LEEs). In general, embodiments of the illumination devices feature one or more optical couplers that redirect illumination from the LEEs to a reflector which then directs the light into a range of angles. In some embodiments, the illumination device includes a second reflector that reflects at least some of the light from the first reflector. In certain embodiments, the illumination device includes a light guide that guides light from the collector to the first reflector. The components of the illumination device can be configured to provide illumination devices that can provide a variety of intensity distributions. Such illumination devices can be configured to provide light for particular lighting applications, including office lighting, task lighting, cabinet lighting, garage lighting, wall wash, stack lighting, and downlighting.

Abstract: Embodiments of methods and apparatus for providing distributed airborne wireless communications are provided herein. In some embodiments, an airborne wireless service area includes: an airborne fleet, comprised of a plurality of aircraft, wherein the airborne fleet is configured to transmit a plurality of first beams at a first radio frequency (RF), wherein the plurality of first beams are characterized by corresponding first frequency band, channel, bandwidth, transmission format, uneven angular field intensity distribution, and boundaries, wherein neighboring first beams have an overlap region, and wherein at least one of the following characteristics is different between the neighboring first beams: frequency band, channel, or transmission format; and a plurality of first communication cells defined by respective boundaries of the plurality of first beams, wherein each of the first communication cells are characterized by their size, shape, and position.

Abstract: The present invention relates to glucoamylase variants having improved thermostability. The present invention also relates to polynucleotides encoding the variants; nucleic acid constructs, vectors, and host cells comprising the polynucleotides; and methods of using the variants.

Abstract: An exhaust conduit for neutralizing condensate from high efficiency gas storage water heaters is provided. The exhaust conduit includes an inlet configured to be coupled to an exhaust outlet of the heater, an outlet configured to be coupled to an exhaust vent, and a condensate chamber having an interior in fluidic communication with the inlet and the outlet. The condensate chamber has a lower portion configured to receive a neutralizer and an upper portion having a service port configured to provide access to the lower portion of the condensate chamber. The condensate chamber further includes a fluid outlet for draining the neutralized condensate via a drain line. The exhaust conduit has one or more ridges disposed in the chamber that are arranged to define a channel for directing condensate from the inlet across the neutralizer toward the fluid outlet.

Abstract: An adjustable bench comprises a seat, a skirt extending from the seat, and a plurality of height adjustable leg assemblies coupled to the skirt. The seat is shaped to be selectively mated with the skirt to provide the bench with either a flat top or a sloped top surface.

Abstract: An adjustable bench comprises a seat, a skirt extending from the seat, and a plurality of height adjustable leg assemblies coupled to the skirt. The seat is shaped to be selectively mated with the skirt to provide the bench with either a flat top or a sloped top surface.

Abstract: An adjustable bench comprises a seat, a skirt extending from the seat, and a plurality of height adjustable leg assemblies coupled to the skirt. The seat is shaped to be selectively mated with the skirt to provide the bench with either a flat top surface or a sloped top surface.

Abstract: A transient voltage suppression (TVS) device, may include: a substrate base formed in a substrate, the substrate base comprising a semiconductor of a first conductivity type; and an epitaxial layer, disposed on the substrate base, on a first side of the substrate, and comprising a semiconductor of a second conductivity type. The epitaxial layer may include: a first portion, the first portion having a first layer thickness; and a second portion, the second portion having a second layer thickness, less than the first layer thickness, wherein the first portion and the second portion are disposed on a first side of the substrate, and wherein the first portion is electrically isolated from the second portion.

Abstract: An adjustable bench comprises a seat, a skirt extending from the seat, and a plurality of height adjustable leg assemblies coupled to the skirt. The seat is shaped to be selectively mated with the skirt to provide the bench with either a flat top surface or a sloped top surface.

Abstract: A transient voltage suppression (TVS) device, may include: a substrate base formed in a substrate, the substrate base comprising a semiconductor of a first conductivity type; and an epitaxial layer, disposed on the substrate base, on a first side of the substrate, and comprising a semiconductor of a second conductivity type. The epitaxial layer may include: a first portion, the first portion having a first layer thickness; and a second portion, the second portion having a second layer thickness, less than the first layer thickness, wherein the first portion and the second portion are disposed on a first side of the substrate, and wherein the first portion is electrically isolated from the second portion.

Abstract: A transient voltage suppression (TVS) device, may include: a substrate base formed in a substrate, the substrate base comprising a semiconductor of a first conductivity type; and an epitaxial layer, disposed on the substrate base, on a first side of the substrate, and comprising a semiconductor of a second conductivity type. The epitaxial layer may include: a first portion, the first portion having a first layer thickness; and a second portion, the second portion having a second layer thickness, less than the first layer thickness, wherein the first portion and the second portion are disposed on a first side of the substrate, and wherein the first portion is electrically isolated from the second portion.

Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100V when an external voltage is applied between the first surface region and second surface region.

Abstract: A transient voltage suppression (TVS) device, may include: a substrate base formed in a substrate, the substrate base comprising a semiconductor of a first conductivity type; and an epitaxial layer, disposed on the substrate base, on a first side of the substrate, and comprising a semiconductor of a second conductivity type. The epitaxial layer may include: a first portion, the first portion having a first layer thickness; and a second portion, the second portion having a second layer thickness, less than the first layer thickness, wherein the first portion and the second portion are disposed on a first side of the substrate, and wherein the first portion is electrically isolated from the second portion.

Abstract: A transient voltage suppression (TVS) device may include a substrate base formed in a substrate, the substrate base comprising a semiconductor of a first conductivity type. The TVS device may further include an epitaxial layer, comprising a first thickness, and disposed on the substrate base, on a first side of the substrate. The epitaxial layer may include a first epitaxial portion, the first epitaxial portion comprising the first thickness, and being formed of a semiconductor of a second conductivity type; and a second epitaxial portion, the second epitaxial portion comprising an upper region, the upper region formed of the second conductivity type, and having a second thickness less than the first thickness. A buried diffusion region may be disposed in a lower portion of the epitaxial layer in the second epitaxial region, the buried diffusion region being formed of a semiconductor of the first conductivity type, wherein the first portion is electrically isolated from the upper region of the second portion.

Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100V when an external voltage is applied between the first surface region and second surface region.

Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100 V when an external voltage is applied between the first surface region and second surface region.

Abstract: Transient suppression circuit arrangements are disclosed. In one implementation of a transient suppression circuit, at least one avalanche diode is coupled in series with a DIAC, a silicon diode for alternating current (SIDAC) device or SIDACtor.

Abstract: In one embodiment, an overvoltage protection device may include a semiconductor substrate comprising an n-type body region. The overvoltage protection device may further include a first p-type region disposed in a first surface region of the semiconductor substrate, and forming a first P/N junction with the n-type body region, and a second p-type region disposed in a second surface region of the semiconductor substrate opposite the first surface, and forming a second P/N junction with the n-type body region, wherein the n-type body region, first p-type region, and second p-type region form a breakdown device having a breakdown voltage greater than 100 V when an external voltage is applied between the first surface region and second surface region.