Patents by Inventor Allan Pourchet
Allan Pourchet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20200127045Abstract: A method of manufacturing light emitting diode (LED) devices is provided. In one example, the method comprises: forming a plurality of LED dies on a starter substrate, each of the plurality of LED dies including a device-side bump; moving, using a pick up tool (PUT), the starter substrate and the plurality of LED dies towards a backplane, the backplane including a plurality of backplane-side bumps; establishing the conductive bonds between the device-side bumps of the plurality of LED dies and the backplane-side bumps of the backplane at the plurality of contact locations; and operating the PUT to release the starter substrate to enable transferring of the plurality of LED dies to the backplane.Type: ApplicationFiled: October 8, 2019Publication date: April 23, 2020Inventors: CĂ©line Claire OYER, Allan POURCHET
-
Patent number: 10615305Abstract: Embodiments relate to a method for fabricating a light-emitting-diode (LED). A metal layer is deposited on a p-type semiconductor. The p-type semiconductor is on an n-type semiconductor. The metal layer is patterned to define a p-metal. The p-type semiconductor is etched using the p-metal as an etch mask. Similarly, the n-type semiconductor is etched using the p-metal and the p-type semiconductor as an etch mask to define individual LEDs.Type: GrantFiled: April 20, 2018Date of Patent: April 7, 2020Assignee: Facebook Technologies, LLCInventors: Celine Claire Oyer, Allan Pourchet
-
Publication number: 20200083400Abstract: Disclosed herein are techniques relating to wafer-to-wafer bonding for manufacturing light-emitting diodes (LEDs). In some embodiments, a method includes reducing bowing of a layered structure including a semiconductor material and a substrate on which the semiconductor material is formed by generating breakages, fractures, or at least one region of weakened bonding within the layered structure. The method also includes bonding a base wafer to the semiconductor material, removing the substrate from the semiconductor material, and forming a plurality of trenches through the semiconductor material to produce a plurality of LEDs.Type: ApplicationFiled: September 4, 2019Publication date: March 12, 2020Inventors: William Padraic HENRY, Allan POURCHET
-
Patent number: 10586725Abstract: One or more chips are transferred from one substrate to another by using one or more polymer layers to secure the one or more chips to an intermediate carrier substrate. While secured to the intermediate carrier substrate, the one or more chips may be transported or put through further processing or fabrication steps. To release the one or more chips, the adhesion strength of the one or more polymer layers is gradually reduced to minimize potential damage to the one or more chips.Type: GrantFiled: January 10, 2018Date of Patent: March 10, 2020Assignee: Facebook Technologies, LLCInventors: Pooya Saketi, Oscar Torrents Abad, Allan Pourchet, Patrick Joseph Hughes, Karsten Moh, Daniel Brodoceanu
-
Patent number: 10559486Abstract: One or more chips are transferred from one substrate to another by using one or more polymer layers to secure the one or more chips to an intermediate carrier substrate. While secured to the intermediate carrier substrate, the one or more chips may be transported or put through further processing or fabrication steps. To release the one or more chips, the adhesion strength of the one or more polymer layers is gradually reduced to minimize potential damage to the one or more chips.Type: GrantFiled: January 10, 2018Date of Patent: February 11, 2020Assignee: Facebook Technologies, LLCInventors: Daniel Brodoceanu, Pooya Saketi, Oscar Torrents Abad, Allan Pourchet, Patrick Joseph Hughes, Karsten Moh
-
Publication number: 20200044114Abstract: A Light emitting diode (LED) includes a mesa structure, a light emitting source within the mesa structure, and a primary emission surface on a side of the LED opposed to a top of the mesa structure. The light emitting source is configured to emit light anisotropically in a first direction perpendicular to a second direction of emission of the light from the LED at the primary emission surface.Type: ApplicationFiled: September 30, 2019Publication date: February 6, 2020Inventors: Vincent Brennan, Christopher Percival, Padraig Hughes, Allan Pourchet, Celine Claire Oyer
-
Patent number: 10490699Abstract: A micro-LED, ?LED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H2*H2)/Ac, of less than 0.5, and the ?LED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.Type: GrantFiled: August 14, 2018Date of Patent: November 26, 2019Assignee: Facebook Technologies, LLCInventors: Vincent Brennan, Christopher Percival, Padraig Hughes, Allan Pourchet, Celine Claire Oyer
-
Publication number: 20190334058Abstract: A laser light is used to modify the surface of the gallium semiconductor layer of an LED. The parameters of the laser are selected so that the laser interacts with the gallium semiconductor layer in a desired manner to yield the desired surface properties. For example, if a particular surface roughness is desired, the power of the laser light is selected so that the laser light penetrates the gallium semiconductor layer to a depth matching the desired surface roughness. The same principles can also be applied in a process that creates features such as trenches, pits, lenses, and mirrors on the gallium semiconductor layer of an LED. The laser projector is operated to irradiate a region of the gallium semiconductor layer to create a region of metallic gallium. The desired surface roughness and the different features can advantageously improve the beam collimation, light extraction, and other properties of the LED.Type: ApplicationFiled: April 25, 2019Publication date: October 31, 2019Inventors: Allan Pourchet, Vincent Brennan
-
Patent number: 10418510Abstract: A method for fabricating a light emitting diode (LED) with a first electrical contact deposited around the side of a layered mesa structure. First, layers of materials are formed. The layers of materials include a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first and second semiconductor layers for producing light responsive to passing current through the light emitting layer. The formed layers of material are shaped to include a bottom surface, a top surface, and at least one side surface extending from the bottom surface to the top surface. The top surface has a smaller area than the bottom surface. An electrical contact is deposited on the at least one side surface.Type: GrantFiled: December 22, 2017Date of Patent: September 17, 2019Assignee: Facebook Technologies, LLCInventors: Celine Claire Oyer, Allan Pourchet
-
Patent number: 10304706Abstract: An LED die containing a gallium semiconductor layer is placed on a target substrate using a pick-up tool (PUT) attached to the LED die using metallic gallium. As a result of a laser lift-of (LLO) process to separate the gallium semiconductor layer from a substrate layer on which the gallium semiconductor layer is formed, a layer of gallium metal is formed on a surface of the LED die. The gallium layer is melted to form liquid gallium. A head of the PUT is contacted with the liquid gallium, whereupon the LED die is cooled such that the liquid gallium solidifies, attaching the LED die to the PUT. The PUT picks up and places the LED die at a desired location on a target substrate. The LED die can be heated to melt the gallium layer, allowing the PUT to be detached.Type: GrantFiled: June 7, 2018Date of Patent: May 28, 2019Assignee: Facebook Technologies, LLCInventors: Allan Pourchet, Pooya Saketi
-
Publication number: 20190109027Abstract: An LED die containing a gallium semiconductor layer is placed on a target substrate using a pick-up tool (PUT) attached to the LED die using metallic gallium. As a result of a laser lift-of (LLO) process to separate the gallium semiconductor layer from a substrate layer on which the gallium semiconductor layer is formed, a layer of gallium metal is formed on a surface of the LED die. The gallium layer is melted to form liquid gallium. A head of the PUT is contacted with the liquid gallium, whereupon the LED die is cooled such that the liquid gallium solidifies, attaching the LED die to the PUT. The PUT picks up and places the LED die at a desired location on a target substrate. The LED die can be heated to melt the gallium layer, allowing the PUT to be detached.Type: ApplicationFiled: June 7, 2018Publication date: April 11, 2019Inventors: Allan Pourchet, Pooya Saketi
-
Publication number: 20190013438Abstract: A micro-LED, ?LED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H2*H2)/Ac, of less than 0.5, and the ?LED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.Type: ApplicationFiled: August 14, 2018Publication date: January 10, 2019Inventors: Vincent Brennan, Christopher Percival, Padraig Hughes, Allan Pourchet, Celine Claire Oyer
-
Publication number: 20180332744Abstract: Methods and apparatus for use in the manufacture of a display element. Some embodiments include a method for selective pick up of a subset of a plurality of electronic devices adhered to a handle layer. The method comprises modifying a level of adhesion between one or more electronic devices of the plurality of electronic devices adhered to the handle layer, such that the subset of the plurality of electronic devices has a level of adhesion to the handle layer that is less than a force applied by a pick up tool, PUT. This enables selective pick up of the subset of the plurality of electronic devices from the handle layer by the PUT.Type: ApplicationFiled: July 3, 2018Publication date: November 15, 2018Inventors: Allan Pourchet, William Padraic Henry, Patrick Joseph Hughes, Joseph O'Keeffe
-
Patent number: 10074774Abstract: A micro-LED, ?LED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H2*H2)/Ac, of less than 0.5, and the ?LED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.Type: GrantFiled: November 23, 2015Date of Patent: September 11, 2018Assignee: Oculus VR, LLCInventors: Vincent Brennan, Christopher Percival, Padraig Hughes, Allan Pourchet, Celine Claire Oyer
-
Patent number: 10070568Abstract: Methods and apparatus for use in the manufacture of a display element. Some embodiments include a method for selective pick up of a subset of a plurality of electronic devices adhered to a handle layer. The method comprises modifying a level of adhesion between one or more electronic devices of the plurality of electronic devices adhered to the handle layer, such that the subset of the plurality of electronic devices has a level of adhesion to the handle layer that is less than a force applied by a pick up tool, PUT. This enables selective pick up of the subset of the plurality of electronic devices from the handle layer by the PUT.Type: GrantFiled: November 11, 2016Date of Patent: September 4, 2018Assignee: Oculus VR, LLCInventors: Allan Pourchet, William Padraic Henry, Patrick Joseph Hughes, Joseph O'Keeffe
-
Patent number: 10020212Abstract: An LED die containing a gallium semiconductor layer is placed on a target substrate using a pick-up tool (PUT) attached to the LED die using metallic gallium. As a result of a laser lift-of (LLO) process to separate the gallium semiconductor layer from a substrate layer on which the gallium semiconductor layer is formed, a layer of gallium metal is formed on a surface of the LED die. The gallium layer is melted to form liquid gallium. A head of the PUT is contacted with the liquid gallium, whereupon the LED die is cooled such that the liquid gallium solidifies, attaching the LED die to the PUT. The PUT picks up and places the LED die at a desired location on a target substrate. The LED die can be heated to melt the gallium layer, allowing the PUT to be detached.Type: GrantFiled: October 9, 2017Date of Patent: July 10, 2018Assignee: Oculus VR, LLCInventors: Allan Pourchet, Pooya Saketi
-
Publication number: 20170271557Abstract: A micro-LED ?LED, comprising: a substantially parabolic mesa structure; a light emitting source within the mesa structure; and a primary emission surface on a side of the device opposed to a top of the mesa structure; wherein the mesa structure has an aspect ratio, defined by (H2*H2)/Ac, of less than 0.5, and the ?LED further comprises a reflective surface located in a region from the light emitting source to the primary emission surface, wherein the reflective surface has a roughness, Ra, less than 500 nm.Type: ApplicationFiled: November 23, 2015Publication date: September 21, 2017Inventors: Vincent BRENNAN, Christopher PERCIVAL, Padraig HUGHES, Allan POURCHET, Celine OYER
-
Publication number: 20170142874Abstract: Methods and apparatus for use in the manufacture of a display element. Some embodiments include a method for selective pick up of a subset of a plurality of electronic devices adhered to a handle layer. The method comprises modifying a level of adhesion between one or more electronic devices of the plurality of electronic devices adhered to the handle layer, such that the subset of the plurality of electronic devices has a level of adhesion to the handle layer that is less than a force applied by a pick up tool, PUT. This enables selective pick up of the subset of the plurality of electronic devices from the handle layer by the PUT.Type: ApplicationFiled: November 11, 2016Publication date: May 18, 2017Inventors: Allan Pourchet, William Padraic Henry, Patrick Joseph Hughes, Joseph O'Keeffe