Abstract: The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Abstract: The invention relates to an antireflective coating composition comprising a polymer, a crosslinker and a thermal acid generator, where the polymer comprises at least one unit of structure (1), at least one unit of structure (2) and at least one structure of structure (3), where R1 to R9 is independently selected from H and C1-C6 alkyl, R? and R? is independently selected from H and C1-C6 alkyl, X is C1-C6 alkylene, Y is C1-C6 alkylene. The invention further relates to a process for imaging a photoresist coated over the antireflective coating composition.

Abstract: The invention relates to an antireflective coating composition comprising a polymer, a crosslinker and a thermal acid generator, where the polymer comprises at least one unit of structure (1), at least one unit of structure (2) and at least one structure of structure (3), where R1 to R9 is independently selected from H and C1-C6 alkyl, R? and R? is independently selected from H and C1-C6 alkyl, X is C1-C6 alkylene, Y is C1-C6 alkylene. The invention further relates to a process for imaging a photoresist coated over the antireflective coating composition.

Abstract: The present invention relates to an organic spin coatable antireflective coating composition comprising a polymer comprising at least one unit with 3 or more fused aromatic rings in the backbone of the polymer and at least one unit with an aliphatic moeity in the backbone of the polymer. The invention further relates to a process for imaging the present composition.

Abstract: A lithographic process is disclosed. In the process, devices are fabricated by a sequence of steps in which materials are deposited on a substrate and patterned. These patterned layers are used to form devices, such as semiconductor devices, optical devices and the like over the substrate. The desired pattern is formed by introducing an image of a first pattern in a layer of energy sensitive material. The image is then developed to form a pattern with features having a first size. Subsequently, the pattern is exposed to an isotropic liquid etchant to reduce the size of the features to a second, smaller size. The pattern having the features of the second, smaller size is then transferred into the underlying substrate or a layer of material formed over the substrate.