Abstract: A dual-bus architecture that includes a high-speed system bus, called the NexBus (20), and a slower peripheral bus, called the alternate bus or AB (25). The NexBus and AB are coupled by control logic (45) which includes an arbiter (50) and an alternate bus interface (ABI) (60). The ABI is treated as a master for both the NexBus and the AB. While it would be possible to have the adapter always request the AB (which also requires the NexBus), that would slow down NexBus operations to the bandwidth of the AB. This problem is avoided by providing two request lines for each adapter, -NREQ (NexBus only) and -AREQ (both buses), having the adapter normally assert -NREQ first. However, if the addressed device is on the AB, the ABI automatically detects this fact and attempts to do a crossing transfer to the AB, even though the request was for the NexBus only.

Abstract: A dual-bus architecture that includes a high-speed system bus, called the NexBus (20), and a slower peripheral bus, called the alternate bus or AB (25). The NexBus and AB are coupled by control logic (45) which includes an arbiter (50) and an alternate bus interface (ABI) (60). The ABI is treated as a master for both the NexBus and the AB. While it would be possible to have the adapter always request the AB (which also requires the NexBus), that would slow down NexBus operations to the bandwidth of the AB. This problem is avoided by providing two request lines for each adapter, -NREQ (NexBus only) and -AREQ (both buses), having the adapter normally assert -NREQ first. However, if the addressed device is on the AB, the ABI automatically detects this fact and attempts to do a crossing transfer to the AB, even though the request was for the NexBus only.

Abstract: A dual-bus architecture that includes a high-seed system bus, called the NexBus (20), and a slower peripheral bus, called the alternate bus or AB (25). The NexBus and AB are coupled by control logic (45) which includes an arbiter (50) and an alternate bus interface (ABI) (60). The ABI is treated as a master for both the NexBus and the AB. While it would be possible to have the adapter always request the AB (which also requires the NexBus), that would slow down NexBus operations to the bandwidth of the AB. This problem is avoided by providing two request lines for each adapter, -NREQ (NexBus only) and -AREQ (both buses), having the adapter normally assert -NREQ first. However, if the addressed device is on the AB, the ABI automatically detects this fact and attempts to do a crossing transfer to the AB, even though the request was for the NexBus only.

Abstract: A method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate by forming a wide plug of chemical vapor deposited silicon dioxide in the trench, filling the remaining unfilled trench portions by chemical vapor depositing a layer of silicon dioxide over the substrate and etching back this layer. The method produces chemically pure, planar wide deep dielectric filled isolation trenches and may also be used to simultaneously produce narrow deep dielectric filled isolation trenches.

Abstract: Disclosed is a process for forming an improved bipolar transistor in a silicon substrate of a first conductivity type, said silicon substrate having a planar surface, a subcollector region of a second conductivity type formed in said substrate, an epitaxial layer of said second conductivity type formed on said planar surface of said substrate, and first, second and third spaced apart recessed oxide isolation regions extending from the planar surface of said epitaxial layer into said substrate, a subcollector reach-through region positioned between said second and third recessed oxide isolation regions, said subcollector reach-through region extending from said planar surface of said epitaxial layer to said subcollector region, said process including the following steps: deposit, using chemical vapor deposition techniques, a layer of doped polysilicon on the exposed surface of said substrate said dopant being of said first conductivity type; deposit, using chemical vapor deposition techniques a first layer of

Abstract: A bipolar transistor isolated by deep recessed oxide 19, with shallow recessed oxide 15 separating the base 32, 37 from collector contact 35, with polysilicon contact 26 to base extrinsic region 37, the polysilicon being self-aligned with the emitter 36 and the emitter contact.