Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

Abstract: Methods and systems for providing weak pattern (or hotspot) detection and quantification are disclosed. A weak pattern detection and quantification system may include a wafer inspection tool configured to inspect a wafer and detect defects present on the wafer. The system may also include at least one processor in communication with the wafer inspection tool. The at least one processor may be configured to: perform pattern grouping on the detected defects based on design of the wafer; identify regions of interest based on the pattern grouping; identify weak patterns contained in the identified regions of interest, the weak patterns being patterns deviating from the design by an amount greater than a threshold; validate the weak patterns identified; and report the validated weak patterns or facilitate revision of the design of the wafer based on the validated weak patterns.

Abstract: A delivery system for mixing and dispensing a gel stemming material into a blast hole is disclosed. The system includes a dual-pump assembly in fluid communication with respective sources of a first gel precursor fluid and a second gel precursor fluid; a pair of hoses associated with a means to vary an effective length of said hoses; a dosing head having a first inlet and a second inlet, said inlets arranged in respective fluid communication via said hoses with the dual pump assembly to receive the first and second gel precursor fluids, the dosing head being configured to receive and mix the first and second gel precursor fluids to produce the gel stemming material and to dispense the gel stemming material via an outlet. In use, the effective length of the hoses may be varied to position the dosing head and dispense the gel stemming material in the blast hole.

Abstract: Mixed-mode includes receiving inspection results including one or more images of a selected region of the wafer, the one or more images include one or more wafer die including a set of repeating blocks, the set of repeating blocks a set of repeating cells. In addition, mixed-mode inspection includes adjusting a pixel size of the one or more images to map each cell, block and die to an integer number of pixels. Further, mixed-mode inspection includes comparing a first wafer die to a second wafer die to identify an occurrence of one or more defects in the first or second wafer die, comparing a first block to a second block to identify an occurrence of one or more defects in the first or second blocks and comparing a first cell to a second cell to identify an occurrence of one or more defects in the first or second cells.

Abstract: Mixed-mode includes receiving inspection results including one or more images of a selected region of the wafer, the one or more images include one or more wafer die including a set of repeating blocks, the set of repeating blocks a set of repeating cells. In addition, mixed-mode inspection includes adjusting a pixel size of the one or more images to map each cell, block and die to an integer number of pixels. Further, mixed-mode inspection includes comparing a first wafer die to a second wafer die to identify an occurrence of one or more defects in the first or second wafer die, comparing a first block to a second block to identify an occurrence of one or more defects in the first or second blocks and comparing a first cell to a second cell to identify an occurrence of one or more defects in the first or second cells.

Abstract: An above ground stemming device is described which includes a body configured, in use, to cover an open end of a blast hole loaded with explosives to surface or to within 300 mm of surface. The body has a void containing a stem of superabsorbent polymer gel therein and it is positioned in use to allow the stem of superabsorbent polymer gel to be in contact with the explosives in the blast hole. The body may include a base and an upper portion extending upwardly from the base. The void may extend through the body to an opening in the base. Alternatively, the void may be encased by the body. The body may be fabricated from a rigid material or from a flexible material capable of being inflated with a fluid.

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

Abstract: Methods and systems for providing weak pattern (or hotspot) detection and quantification are disclosed. A weak pattern detection and quantification system may include a wafer inspection tool configured to inspect a wafer and detect defects present on the wafer. The system may also include at least one processor in communication with the wafer inspection tool. The at least one processor may be configured to: perform pattern grouping on the detected defects based on design of the wafer; identify regions of interest based on the pattern grouping; identify weak patterns contained in the identified regions of interest, the weak patterns being patterns deviating from the design by an amount greater than a threshold; validate the weak patterns identified; and report the validated weak patterns or facilitate revision of the design of the wafer based on the validated weak patterns.

Abstract: A stochastic calculation engine receives inputs from a semiconductor inspection tool or semiconductor review tool. The stochastic calculation engine determines abnormal locations and pattern variation from the inputs and determines stochastic failures from the inputs. An electronic data storage unit connected with the stochastic calculation engine can include a database with known stochastic behavior and known process metrology variations. The stochastic calculation engine can flag stochastic features, determine a failure rate, or determine fail probability.

Abstract: Defects can be identified using a hybrid design layout that includes a printable layer and a non-printed layer. The hybrid design layout can be generated by incorporating at least a portion of the non-printable layer layout with the printable layer layout. Defects can be identified using optical or scanning electron beam images.

Abstract: Methods and systems for providing weak pattern (or hotspot) detection and quantification are disclosed. A weak pattern detection and quantification system may include a wafer inspection tool configured to inspect a wafer and detect defects present on the wafer. The system may also include at least one processor in communication with the wafer inspection tool. The at least one processor may be configured to: perform pattern grouping on the detected defects based on design of the wafer; identify regions of interest based on the pattern grouping; identify weak patterns contained in the identified regions of interest, the weak patterns being patterns deviating from the design by an amount greater than a threshold; validate the identified weak patterns; and report the validated weak patterns or facilitate revision of the design of the wafer based on the validated weak patterns.

Abstract: A stochastic calculation engine receives inputs from a semiconductor inspection tool or semiconductor review tool. The stochastic calculation engine determines abnormal locations and pattern variation from the inputs and determines stochastic failures from the inputs. An electronic data storage unit connected with the stochastic calculation engine can include a database with known stochastic behavior and known process metrology variations. The stochastic calculation engine can flag stochastic features, determine a failure rate, or determine fail probability.

Abstract: An above ground stemming device is described which includes a body configured, in use, to cover an open end of a blast hole loaded with explosives to surface or to within 300 mm of surface. The body has a void containing a stem of superabsorbent polymer gel therein and it is positioned in use to allow the stem of superabsorbent polymer gel to be in contact with the explosives in the blast hole. The body may include a base and an upper portion extending upwardly from the base. The void may extend through the body to an opening in the base. Alternatively, the void may be encased by the body. The body may be fabricated from a rigid material or from a flexible material capable of being inflated with a fluid.

Abstract: Defects can be identified using a hybrid design layout that includes a printable layer and a non-printed layer. The hybrid design layout can be generated by incorporating at least a portion of the non-printable layer layout with the printable layer layout. Defects can be identified using optical or scanning electron beam images.

Abstract: Methods and systems for determining parameter(s) of a process to be performed on a specimen are provided. One system includes one or more computer subsystems configured for determining an area of a defect detected on a specimen. The computer subsystem(s) are also configured for correlating the area of the defect with information for a design for the specimen and determining a spatial relationship between the area of the defect and the information for the design based on results of the correlating. In addition, the computer subsystem(s) are configured for automatically generating a region of interest to be measured during a process performed for the specimen with a measurement subsystem based on the spatial relationship.

Abstract: A method and system for measuring overlay in a semiconductor manufacturing process comprise capturing an image of a feature in an article at a predetermined manufacturing stage, deriving a quantity of an image parameter from the image and converting the quantity into an overlay measurement. The conversion is by reference to an image parameter quantity derived from a reference image of a feature at the same predetermined manufacturing stage with known overlay (“OVL”). There is also disclosed a method of determining a device inspection recipe for use by an inspection tool comprising identifying device patterns as candidate device care areas that may be sensitive to OVL, deriving an OVL response for each identified pattern, correlating the OVL response with measured OVL, and selecting some or all of the device patterns as device care areas based on the correlation.

Abstract: Methods and systems for determining characteristic(s) of patterns of interest (POIs) are provided. One system is configured to acquire output of an inspection system generated at the POI instances without detecting defects at the POI instances. The output is then used to generate a selection of the POI instances. The system then acquires output from an output acquisition subsystem for the selected POI instances. The system also determines characteristic(s) of the POI using the output acquired from the output acquisition subsystem.

Abstract: A system, method, and computer program product are provided for systematic and stochastic characterization of pattern defects identified from a fabricated component. In use, a plurality of pattern defects detected from a fabricated component are identified. Additionally, attributes of each of the pattern defects are analyzed, based on predefined criteria. Further, a first set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be systematic pattern defects, and a second set of pattern defects of the plurality of pattern defects are determined, from the analysis, to be stochastic pattern defects. Moreover, a first action is performed for the determined systematic pattern defects and a second action is performed for the determined stochastic pattern defects.

Abstract: A weak pattern identification method includes acquiring inspection data from a set of patterns on a wafer, identifying failing pattern types on the wafer, and grouping like pattern types of the failing pattern types into a set of pattern groups. The weak pattern identification method also includes acquiring image data from multiple varied instances of a first pattern type grouped in a first group, wherein the multiple varied instances of the first pattern type are formed under different conditions. The weak pattern identification method also includes comparing images obtained from common structures of the instances of the first pattern type to identify local differences within a portion of the first pattern type. Further, the weak pattern identification method includes identifying metrology sites within the portion of the first pattern type proximate to a location of the local differences within the portion of the first pattern type.