Abstract: Example implementations relate to a security system having an electronic lock including latch and security modules, to control access to electronic devices. The latch module includes a receiver, a handle, and a torque member rotatably coupled to the receiver and handle. The receiver includes a first recess, a second recess, and a lobe to releasably engage the electronic device within the first recess. The security module includes a tension spring, an actuator, and a lock member having a first pin and a second pin. The tension spring is coupled to the lock member to engage the first pin to second recess when the latch module is in a latched configuration, and hold the security module in a lock-in position. The actuator is releasably engaged to the second pin for rotating the lock member to disengage the first pin from second recess, and release the security module from the lock-in position.

Abstract: Examples described herein relate to connector assembly for a connecting device. The connector assembly may include an electrical connector connectible with a corresponding receiving structure on a receiving device separate from the connecting device. Further, the connector assembly may include a connector housing enclosing the electrical connector. The connector housing may include a mounting lever engaged with a body of the connecting device to secure the connector housing with the connecting device and allow the connector housing to move relative to the body of the connecting device. Further, the connector assembly may include a biasing member disposed within the connector housing to bias the electrical connector toward the receiving structure on the receiving device.

Abstract: The present invention provides power quality correction circuitry integrated into a single IC, therefore saving space and reducing costs while increase potential and frequency. An embodiment of the present invention discloses an integrated circuit with integrated power factor correction circuit (PFC) and MOSFET circuit. Another embodiment of the present invention provides a power factor correction circuit, a pulse width modulation (PWM) control circuit, and MOSFET circuits integrated into a single IC. Therefore, signals provided by the present invention ensure a smooth and high quality power to the system, thus improving the quality and performance of the overall system.

Abstract: The present invention provides power quality correction circuitry integrated into a single IC, therefore saving space and reducing costs while increase potential and frequency. An embodiment of the present invention discloses an integrated circuit with integrated power factor correction circuit (PFC) and MOSFET circuit. Another embodiment of the present invention provides a power factor correction circuit, a pulse width modulation (PWM) control circuit, and MOSFET circuits integrated into a single IC. Therefore, signals provided by the present invention ensure a smooth and high quality power to the system, thus improving the quality and performance of the overall system.

Abstract: An improved diode or rectifier structure and method of fabrication is disclosed involving the incorporation in a Schottky rectifier, or the like, of a dielectric filled isolation trench structure formed in the epitaxial layer adjacent the field oxide layers provided at the edge of the active area of the rectifier, for acting to enhance the field plate for termination of the electric field generated by the device during operation. The trench is formed in a closed configuration about the drift region and by more effectively terminating the electric field at the edge of the drift region the field is better concentrated within the drift region and acts to better interrupt reverse current flow and particularly restricts leakage current at the edges.

Abstract: An improved diode or rectifier structure and method of fabrication is disclosed involving the incorporation in a Schottky rectifier, or the like, of a dielectric filled isolation trench structure formed in the epitaxial layer adjacent the field oxide layers provided at the edge of the active area of the rectifier, for acting to enhance the field plate for termination of the electric field generated by the device during operation. The trench is formed in a closed configuration about the drift region and by more effectively terminating the electric field at the edge of the drift region the field is better concentrated within the drift region and acts to better interrupt reverse current flow and particularly restricts leakage current at the edges.

Abstract: A fan duct induces an air flow generated by a fan of a lower supply of a computer to flow simultaneously through at least two heat-generating components of the computer. The fan dut is formed by plastic injection molding to have a cuboidal configuration, defining a first opening in alignment with the fan, a second opening proximate a first heat-generating component, and a third opening proximate a second heat-generating component when the fan duct is mounted in the computer at a predetermined position. When the fan is operated in a direction to draw air from the computer, an air flow is generated to simultaneously flow through the two heat-generating components and into the fan duct via the second and third openings. The heated air is then expelled out of the fan duct via the first opening to reach an exterior of the computer.