Abstract: The present invention relates to an image sensor and to an imaging system comprising the same. The present invention particularly relates to X-ray image sensors and imaging systems. The image sensor according to the invention comprises a pixel array that includes a plurality of active pixels arranged in a matrix of rows and columns, and a plurality of column lines to which outputs of pixels in the same column are coupled for the purpose of outputting pixel signals. The image sensor further comprises readout circuitry that includes a plurality of readout units, each readout unit being configured for reading out a respective column line through an input node of the readout unit. The image sensor is characterized in that the image sensor further comprises capacitive units, such as capacitors, for capacitively coupling each input node to its corresponding column line.

Abstract: The present invention relates to an image sensor and to an imaging system comprising the same. The present invention particularly relates to X-ray image sensors and imaging systems. The image sensor according to the invention comprises a pixel array that includes a plurality of active pixels arranged in a matrix of rows and columns, and a plurality of column lines to which outputs of pixels in the same column are coupled for the purpose of outputting pixel signals. The image sensor further comprises readout circuitry that includes a plurality of readout units, each readout unit being configured for reading out a respective column line through an input node of the readout unit. The image sensor is characterized in that the image sensor further comprises capacitive units, such as capacitors, for capacitively coupling each input node to its corresponding column line.

Abstract: A charge coupled imaging device includes a matrix of elements for converting an image projected onto the matrix into a frame of charge packets, along with a system of vertical charge transport channels (3) and a horizontal read-out register (C). A structure is provided for dumping unnecessary lines into a removal region in a certain operating mode. These lines are dumped at the transition between the imaging section and the memory section. The imaging device includes an imaging section (A) and a separate memory section (B) as well as a removal region (12) situated below the matrix as an anti-blooming provision. Unnecessary lines may be dumped, for example, into the substrate in that the transport in the imaging section is continued during frame transport while at the same time the transport in the memory section is stopped.

Abstract: The absence of a memory matrix in full frame CCD imagers renders it difficult to convert an image with a sufficiently high frame rate for displaying it again in a satisfactory manner on, for example, an LCD screen. To eliminate this disadvantage, an image is projected on a segment of the imaging matrix in an embodiment of the invention and, after the integration period, is stored in an adjoining, separately controllable segment which is used as a memory during the read-out while in the first segment a fresh image is received and converted into electric charge. During the transfer of the information from the first to the second segment, empty lines are formed between the lines containing information, in which empty lines compensation charge is formed during the charge storage which can be subtracted from the signals so as to compensate for the smear added to the signals during storage in the--exposed--second segment.

Abstract: A 3-phase charge-coupled imaging device is operated in the interlace mode. During integration, voltages are applied to the clock electrodes such that charge is integrated below the same set of electrodes each time. The signal charges of the first field are formed in that 3/4 portion of the charge in each picture element is augmented by 1/4 portion of the charge of the preceding picture element, while the signal charges of the second field are formed in that the 3/4 portion is augmented by 1/4 portion of the charge generated in the following picture element. These summations may be carried out in the sensor itself in that the charge packages are shifted to the left and right during integration. The flicker which is usually the result of interlacing is very strongly reduced in this way.