Abstract: Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; depositing gate material in the gate trench; forming a body in the epitaxial layer; forming a source embedded in the body; forming a contact trench that extends through the source and at least part of the body; forming a body contact implant on a sidewall of the contact trench; forming a diode enhancement layer along bottom of the contact trench, the diode enhancement layer having opposite carrier type as the epitaxial layer; disposing an epitaxial enhancement portion below the diode enhancement layer, the epitaxial enhancement portion having the same carrier type as the epitaxial layer; and disposing a contact electrode in the contact trench; wherein: a distance between top surface of the substrate and bottom of the epitaxial enhancement layer is shorter than a distance between the top surface of the substrate and bottom of the body.

Abstract: A dual channel trench LDMOS transistor includes a semiconductor layer of a first conductivity type formed on a substrate; a first trench formed in the semiconductor layer where a trench gate is formed in an upper portion of the first trench; a body region of the second conductivity type formed in the semiconductor layer adjacent the first trench; a source region of the first conductivity type formed in the body region and adjacent the first trench; a planar gate overlying the body region; a drain drift region of the first conductivity type formed in the semiconductor layer and in electrical contact with a drain electrode. The planar gate forms a lateral channel in the body region, and the trench gate in the first trench forms a vertical channel in the body region of the LDMOS transistor.