Abstract: A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.

Abstract: A method including providing Au-doped Co nanoparticles. The nanoparticles include a combination of non-ferromagnetic nanoparticles and weakly ferromagnetic nanoparticles. The nanoparticles each have an exterior surface. The surfaces of the nanoparticles are functionalized with 7-(5-uracil-ylcarbamoyl)heptanoic acid. A polymer is provided having a general formula including a uracil group. A dispersion is formed by agitating a solution of the nanoparticles. The solution is spin cast into a film. The film is heated under vacuum at a first temperature, TFM, resulting in inducing ferromagnetism in the non-ferromagnetic nanoparticles and converting the non-ferromagnetic nanoparticles to ferromagnetic nanoparticles, and resulting in enhancing ferromagnetism in the weakly ferromagnetic nanoparticles. The nanoparticles are aligned such that magnetic easy axes of the nanoparticles are oriented by applying a magnetic field to the dispersion while at a second temperature less than TFM.

Abstract: A cyclic carbonyl monomer has the formula (7): wherein at least one W? or Wa group comprises a protected glycoside; each Z independently represents O, S, NH or NW?; n is an integer from 0 to 6 wherein when n is 0, carbons labeled 4 and 6 are linked together by a single bond; each W? and Wa group independently represents a hydrogen, a halide, an alkyl group comprising 1 to 20 carbons, an ester group comprising 1 to 20 carbons, an amide group, an aryl group comprising 1 to 20 carbons, an alkoxy group comprising 1 to 20 carbons, or a foregoing W? or Wa group substituted with a protected glycoside; and each W? group independently represents an alkyl group comprising 1 to 20 carbons, an aryl group comprising 1 to 20 carbons, or a foregoing W? group substituted with a protected glycoside.

Abstract: Methods to form a polymer by ring-opening polymerization include reacting, a mixture comprising a monomer, an accelerator, an initiator, and a catalyst comprising a 1,1,1,3,3,3-hexafluoropropan-2-ol-2-yl group to form the polymer. Also disclosed are polymers including a residual amount of the catalyst in an amount greater than 0 weight percent.

Abstract: A one pot method of preparing cyclic carbonyl compounds comprising an active pendant pentafluorophenyl ester group is disclosed. The cyclic carbonyl compounds can be polymerized by ring opening methods to form ROP polymers comprising repeat units comprising a side chain pentafluorophenyl ester group. Using a suitable nucleophile, the pendant pentafluorophenyl ester group can be selectively transformed into a variety of other functional groups before or after the ring opening polymerization.

Abstract: A method of preparing a cyclic monomer, comprising: forming a first mixture comprising a precursor compound, bis(pentafluorophenyl) carbonate, and a catalyst; wherein the precursor compound has a structure comprising a) two or more carbons, and b) two functional groups selected from the group consisting of primary amine, secondary amine, thiol group, hydroxyl group, and combinations thereof; and agitating the first mixture at a temperature effective to form a second mixture comprising the cyclic monomer, the cyclic monomer selected from the group consisting of a cyclic carbonate, a cyclic carbamate, a cyclic urea, a cyclic thiocarbonate, a cyclic thiocarbamate, and a cyclic dithiocarbonate.

Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.

Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.

Abstract: A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C.

Abstract: Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

Abstract: A method. The method includes providing Au-doped Co nanoparticles. The nanoparticles include a combination of non-ferromagnetic nanoparticles and weakly ferromagnetic nanoparticles. The nanoparticles each have an exterior surface. The surfaces of the nanoparticles are functionalized with 7-(5-uracil-ylcarbamoyl)heptanoic acid. A polymer is provided having a general formula including a uracil group. A dispersion is formed by agitating a solution of the nanoparticles. The solution is spin cast into a film. The film is heated under vacuum at a first temperature, TFM, resulting in inducing ferromagnetism in the non-ferromagnetic nanoparticles and converting the non-ferromagnetic nanoparticles to ferromagnetic nanoparticles, and resulting in enhancing ferromagnetism in the weakly ferromagnetic nanoparticles. The nanoparticles are aligned such that magnetic easy axes of the nanoparticles are oriented by applying a magnetic field to the dispersion while at a second temperature less than TFM.

Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.

Abstract: A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.