Abstract: Improved electroluminescent and photonic devices with integrated logic and control circuits are disclosed. Low mobility, contact barrier, space charge limitation and carrier balancing are provided solutions that increase efficiency, reliability and longevity of the devices. Device power loss and power requirements are reduced. True-ohmic contact materials allow a gate-controlled, light emitting organic triode MESFET configuration that eliminates commonly used ITO thereby increasing luminous output, and providing ease of address and control by integrally fabricated complementary MESFET address and control circuitry. The devices can be fabricated by printing or by weaving appropriate materials, and can be configured as color displays.

Abstract: Improved electroluminescent and photonic devices with integrated logic and control circuits are disclosed. Low mobility, contact barrier, space charge limitation and carrier balancing are provided solutions that increase efficiency, reliability and longevity of the devices. Device power loss and power requirements are reduced. True-ohmic contact materials allow a gate-controlled, light emitting organic triode MESFET configuration that eliminates commonly used ITO thereby increasing luminous output, and providing ease of address and control by integrally fabricated complementary MESFET address and control circuitry. The devices can be fabricated by printing or by weaving appropriate materials, and can be configured as color displays.

Abstract: Improved electroluminescent and photonic devices with integrated logic and control circuits are disclosed. Low mobility, contact barrier, space charge limitation and carrier balancing are provided solutions that increase efficiency, reliability and longevity of the devices. Device power loss and power requirements are reduced. True-ohmic contact materials allow a gate-controlled, light emitting organic triode MESFET configuration that eliminates commonly used ITO thereby increasing luminous output, and providing ease of address and control by integrally fabricated complementary MESFET address and control circuitry. The devices can be fabricated by printing or by weaving appropriate materials, and can be configured as color displays.

Abstract: Triode pixel devices and complementary triode logic devices for control of the pixel devices are disclosed. The pixel and logic devices are integrally fabricated in arrays suitable for full color flat display panels. Both pixel and logic elements are operated in a gate controlled avalanche mode. Pixel elements are formed from organic or inorganic electroluminescent (EL) materials ohmically contacted by low work function metal. The depletion region necessary for controlling EL intensity or preventing EL avalanche is affected by potentials to a gate element injected into the EL material. The shape of the gate element multiplies the field produced by the gate potential. Luminescence is directly viewed from the brighter, lateral EL emission not available in the prior art. The complementary logic devices are formed from separate depositions of n-type and p-type silicon with their respective gates connected in common.

Abstract: Polymer photoconduction and photoemission devices and arrays for use in photoresist, two-way communication, identification and detection processes, and other products and photonic devices. The apparatus is functionally responsive to X-ray and EUV radiation. The apparatus is preferably embodied in an array which can both sense and emit UV radiation at around wavelengths &lgr;=145 nm to &lgr; 100 nm. The devices can be fabricated by forming woven polymer fibers or ink-jet printed polymers into an array or arrays. Each array can also be integrally fabricated with address and control circuitry required to obtain the desired functionality.

Abstract: Improved electroluminescent and photonic devices with integrated logic and control circuits are disclosed. Low mobility, contact barrier, space charge limitation and carrier balancing are provided solutions that increase efficiency, reliability and longevity of the devices. Device power loss and power requirements are reduced. True-ohmic contact materials allow a gate-controlled, light emitting organic triode MESFET configuration that eliminates commonly used ITO thereby increasing luminous output, and providing ease of address and control by integrally fabricated complementary MESFET address and control circuitry. The devices can be fabricated by printing or by weaving appropriate materials, and can be configured as color displays.

Abstract: A flat-panel video display woven of dielectric, conducting and semiconducting fibers is disclosed. The display device is fabricated from a warp and woof fabric of gated triode devices including red, green and blue gated electroluminescent (EL) devices, address devices, and controlling logic elements. The fibers and dimensions thereof substitute for and eliminate expensive deposition and photolithography steps of prior art. Insulating (dielectric) and metal fibers bear the warp and woof stress of a weaving loom used to fabricate the fabric display. Pixel density of the display is proportional to the EL polymer fiber width ranging from submicron to millimeter. For constant pixel density at increasing display size, the thickness of the stressed fibers, and of the display panel, increases. The resulting display has an overall area, or number of displays of a woven batch, limited only by the weaving loom's capability and the breaking point of the insulating fibers used to bear stress.

Abstract: A gated pixel device employing conjugated polymer electroluminescent material is disclosed. Pixel devices are triodes or diodes. Conjugated polymer electroluminescent material is spun onto a flexible, transparent substrate thereby reducing fabrication cost when compared to conventional material deposition techniques. A plurality of pixels can be integrally fabricated on a common, flexible, transparent substrate thereby producing a display panel which can be formed or shaped into any desired geometry, and thereby creating applications not possible with conventional, rigid flat panel displays in the prior art. Both monocolor and full color flexible display panels are disclosed.

Abstract: This disclosure is directed toward field emission surfaces, and is more particularly directed toward improvements in cold, low field, high current, low noise field emission devices and surfaces. Such devices are used in field emission display devices such as video displays and information displays. The device utilizes a cermet with graded concentration of insulative and conductive particles deposited on the truncated point of a conical emitter. The emission surface of the cermet is insensitive to gases that oxidize or poison the emission surface. Such gases and other contaminants emanate from a phosphor when the emission device is used in phosphor display devices. The field emission device is operated at lower potentials thereby reducing power requirements and minimizing heat dissipation requirements. Further, the field emission device which operates at lower field in order to reduce mechanically and temporally unstable emission sites which result in current bursts and current deficits at these sites.

Abstract: A device is disclosed which produces high current, low noise, low lateral energy, stochastic electron emission from a multiplicity of insulative particles subjected to a field. The insulative particles are in and of a surface thickness comprised of a random mixture of insulative and conductive particles in ohmic contact. Emission is achieved at applied potentials of about 5 volts which produce a field sufficient to emit electron currents of nanoamperes to milliamperes. Single devices or arrays of devices may be batch fabricated. Each device has an imtegral, implicity self-aligned electron optic system comprising means for modulating, focusing and deflecting the formed current beam, and means shielding the device from ambient magnetic fields.

Abstract: A semiconductor type batch fabrication procedure is disclosed in the preferred and illustrated embodiment. The process forms individual field emission devices and the necessary electron optics for each. The optics, having the form of various anodes, is aligned on a common axis above a pyramid or conic member terminating at a tip which functions as a microgun with the anodes. The microgun structure is supported on a substrate and forms, modulates, deflects and focuses electron beams. The complete device utilizes voltage levels routinely obtained in conventional integrated circuits, which integrated circuits may be simultaneously fabricated on the same supportive substrate with the microguns. The procedure further contemplates the fabrication of a complete array of microguns arranged in rows and columns.

Abstract: An electron beam storage device is disclosed. A beam impinges on a target. The target stores data and it can be read as needed. The target is made of multiple layers, from the top, a first layer of thin conductive metal, and a semiconductor joined to it to define a Schottky diode. The beam liberates ionized pairs in the semiconductor. This is joined to an adjacent layer of dielectric and there is another layer of dielectric. The charge in the semiconductor causes tunneling across the first dielectric into the second where it is held. A bottom layer of metal serves as a gate and terminal for bias voltages. The beam is directed to selected X-Y locations to store data, and read in the same manner.