Abstract: An active electronic device that enables bidirectional communication over a single antenna or path is disclosed. The device may be characterized by a forward path (from an input to an antenna port) offering high gain, and a reverse path (to a receiver port) that can be configured as an finite impulse response (“FIR”) filter. An amplifier of the device is disclosed, the amplifier allowing for tuning of output resistance using passive mixers.

Abstract: An active electronic device that enables bidirectional communication over a single antenna or path is disclosed. The device may be characterized by a forward path (from an input to an antenna port) offering high gain, and a reverse path (to a receiver port) that can be configured as an finite impulse response (“FIR”) filter. An amplifier of the device is disclosed, the amplifier allowing for tuning of output resistance using passive mixers.

Abstract: An active electronic device that enables bidirectional communication over a single antenna or path is disclosed. The device may be characterized by a forward path (from an input to an antenna port) offering high gain, and a reverse path (to a receiver port) that can be configured as an finite impulse response (“FIR”) filter. An amplifier of the device is disclosed, the amplifier allowing for tuning of output resistance using passive mixers.

Abstract: An active electronic device that enables bidirectional communication over a single antenna or path is disclosed. The device may be characterized by a forward path (from an input to an antenna port) offering high gain, and a reverse path (to a receiver port) that can be configured as an finite impulse response (“FIR”) filter. An amplifier of the device is disclosed, the amplifier allowing for tuning of output resistance using passive mixers.

Abstract: A method and apparatus for converting an analog input signal to a digital output signal, provide for simultaneously comparing the input signal to a sequential multiplicity of reference values representing a range of values of the input signal, and asynchronously processing digital results from simultaneous comparison to produce a digital representation of level crossings of the input signal with respect to the multiplicity of reference values.

Abstract: An integrated circuit, and method for manufacturing the integrated circuit, where the integrated circuit can include a phototransistor comprising a base having a SiGe base layer of a predetermined germanium composition and a thickness of more than 65 nm and less than about 90 nm. The integrated circuit can further include a transimpedance amplifier (TIA) receiving an output from the phototransistor. The phototransistor and the TIA can be built on a silicon substrate.

Abstract: A method of designing a current source involves selecting an equation for a current output through a circuit. Variations in current are checked to make sure they are not a strong function of process and bias. A circuit topology is then created as a function of the equation. Example circuits include an addition based current source and a square root based current source.

Abstract: A low-power differential optical receiver useful for high-speed optical communication between CMOS chips includes a multi-stage differential amplifier circuit including a first differential transimpedance stage (22) followed by a plurality of differential feed-forward, high-bandwidth gain stages (24) and a final, differential-to-single-ended converter output stage (26). The inputs of the transimpedance stage receive input signals from a MSM or PIN diode photo-detector. Transistors having plural, different threshold levels are employed within each differential amplifier stage to reduce the size of the footprint of the circuit and improve the gain and bandwidth while decreasing the parasitic capacitance. The optical receiver is fabricated on a silicon on insulator chip, such as in an ultra-thin silicon on sapphire CMOS process which enables the design of high speed circuits with low power consumption and no substrate cross-talk.

Abstract: An integrated electronic-optoelectronic module comprising: an ultrathin silicon-on-sapphire composite substrate; at least one electronic device fabricated in the ultrathin silicon; and at least one optoelectronic device bonded to the ultrathin silicon-on-sapphire composite substrate and in electrical communication with the at least one electronic device fabricated in the ultrathin silicon layer. For example, VCSELs and photodetectors are integrated with CMOS electronic circuitry to provide useful modules for electro-optical interconnects for computing and switching systems.

Abstract: A low-power differential optical receiver useful for high-speed optical communication between CMOS chips includes a multi-stage differential amplifier circuit including a first differential transimpedance stage (22) followed by a plurality of differential feed-forward, high-bandwidth gain stages (24) and a final, differential-to-single-ended converter output stage (26). The inputs of the transimpedance stage receive input signals from a MSM or PIN diode photo-detector. Transistors having plural, different threshold levels are employed within each differential amplifier stage to reduce the size of the footprint of the circuit and improve the gain and bandwidth while decreasing the parasitic capacitance. The optical receiver is fabricated on a silicon on insulator chip, such as in an ultra-thin silicon on sapphire CMOS process which enables the design of high speed circuits with low power consumption and no substrate cross-talk.