Patents by Inventor Amanda Piper

Amanda Piper has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070275565
    Abstract: A method and structure for semiconductor structure includes a plurality of adjacent wiring levels, conductors within each of the wiring levels, and liners at least partially surrounding each of the conductors. The liners of adjacent wiring levels are made of different materials which have different etching characteristics and are selectively etchable with respect to one another. The liners can be tantalum, tungsten, etc. The liners surround at least three sides of the conductors. Each of the wiring levels has a first insulator layer which has a first dielectric material. The liners and the conductors are positioned within the first dielectric material. A second insulator layer has a second dielectric material over the first insulator layer. The first dielectric material has a lower dielectric constant than the second dielectric material. The first dielectric material can be silicon dioxide, fluorinated silicon dioxide (FSD), microporous glasses, etc.
    Type: Application
    Filed: August 15, 2007
    Publication date: November 29, 2007
    Inventors: Edward Cooney, Robert Geffken, Vincent McGahay, William Motsiff, Mark Murray, Amanda Piper, Anthony Stamper, David Thomas, Elizabeth Webster
  • Publication number: 20070077753
    Abstract: A method is provided for fabricating a via contact structure contacting a single-crystal semiconductor diffusion region at a top surface of a substrate. In such method, a first layer is formed in contact with the diffusion region at the top surface, the first layer consisting essentially of a silicide of a first metal. A dielectric region is formed to overlie the first layer. An opening is etched in the dielectric region extending through the first layer to the diffusion region. A second layer is formed to line the opening, the second layer including a second metal. Thereafter, a conductor is deposited within the opening over the second layer, and the substrate is heated to cause the second metal to form a silicide at the top surface.
    Type: Application
    Filed: December 4, 2006
    Publication date: April 5, 2007
    Inventors: Michael Iwatake, Kevin Mello, Matthew Oonk, Amanda Piper, Yun Wang, Keith Wong
  • Publication number: 20060051959
    Abstract: A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric region overlies the first layer, the dielectric region having an outer surface and an opening extending from the outer surface to the top surface of the substrate. A second layer lines the opening and contacts the top surface of the substrate in the opening, the second layer including a second metal which lines a sidewall of the opening and a silicide of the second metal which is self-aligned to the top surface of the substrate in the opening. A diffusion barrier layer overlies the second layer within the opening. A third layer including a third metal overlies the diffusion barrier layer and fills the opening.
    Type: Application
    Filed: September 9, 2004
    Publication date: March 9, 2006
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Michael Iwatake, Kevin Mello, Matthew Oonk, Amanda Piper, Yun Wang, Keith Wong