Abstract: A headend communications device communicates via a network to downstream network elements, such as cable modems coupled behind optical network units, and allocates and grants timeslots for upstream transmissions from the network elements. The headend communications device has a scheduler for managing and controlling timeslot allocations in a manner avoiding interference such as optical beat interference or FM carrier collisions. The scheduler identifies two or more cable modems or like customer network elements served by the headend communications device that will cause at least a pre-determined intolerable level of interference when allocated overlapping timeslots for upstream transmissions and prevents these two or more cable modems or network elements from being allocated and granted overlapping timeslots.

Abstract: A method and apparatus for transferring information of an optical information-bearing signal from a first wavelength to a second wavelength. The method is implemented in an all-optical wavelength converter circuit which includes a laser diode in communication with a polarization controller. An information-bearing signal having a first wavelength is input to the circuit. A polarization controller adjusts the polarization of the information-bearing signal. The laser diode receives the polarization-adjusted information-bearing signal and generates a converted information-bearing signal by transferring the information of the polarization-adjusted information-bearing signal from the first wavelength to the second wavelength. The polarization controller receives the converted information-bearing signal from the laser diode, and polarizes the converted information-bearing signal.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.