Abstract: A crossbar (20) circuit with multiplexer (22A, 22B) circuits implemented in a polygonal form on a chip. The crossbar can be used for implementing a permutation of input bits (24A, 24B) controlled by a bit vector (25). Horizontal and vertical wiring lengths in the crossbar (20) are reduced by stacking the operand latches (24A, 24B, 25) and horizontal or vertical multiplexers (22A, 22B). This implementation decreases the latency of the crossbar and avoids latches to store intermediated results, thus reducing area and power consumption.

Abstract: The present invention relates to a method for fabrication of semiconductor devices, in particular but not limited to the fabrication of double gate transistors of the type Gate-All-Around or “semiconductor-on-nothing” transistors and devices. A method according to the present invention comprises the steps of: (a) forming a trench in a least a first substrate, (b) transferring semiconductor material over the trench to form a semiconductor bridge across the trench, the semiconductor bridge defining an active area. The bridge may be free to oscillate above the trench without using removing a sacrificial layer. The method may also include the steps of: (c) forming a gate insulator on the semiconductor bridge, and (d) applying gate material on the gate insulator, thus forming a gate.