Patents by Inventor Ambarish Roy
Ambarish Roy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240153946Abstract: Devices and methods for layout-dependent voltage handling improvement in switch stacks. In some embodiments, a switching device can include a first terminal and a second terminal, a radio-frequency signal path implemented between the first terminal and the second terminal, and a plurality of switching elements connected in series to form a stack between the second terminal and ground. The stack can have an orientation relative to the radio-frequency signal path, and the switching elements can have a non-uniform distribution of a first parameter based in part on the orientation of the stack.Type: ApplicationFiled: November 13, 2023Publication date: May 9, 2024Inventors: Guillaume Alexandre BLIN, Ambarish ROY, Seungwoo JUNG
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Patent number: 11973115Abstract: Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a method of implementing a radio-frequency switching device can include providing an assembly of source, gate, and drain implemented on an active region; providing a first body contact implemented at a first end of the assembly; and providing a second body contact implemented at a second end of the assembly, the second end distal from the first end along a width of the radio-frequency switching device.Type: GrantFiled: May 4, 2023Date of Patent: April 30, 2024Assignee: Skyworks Solutions, Inc.Inventors: Ambarish Roy, Guillaume Alexandre Blin, Nuttapong Srirattana
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Publication number: 20230369337Abstract: Disclosed is silicon on insulator (SOI) radio frequency (RF) module with noise reduction shielding to mitigate radio frequency interference (RFI) between active circuit devices within the module. The RF module includes various semiconductor active devices disposed upon an insulating substrate. The RF module can be a front-end module (FEM) with one or more charge pumps as active devices. A polysilicon web extends between and underneath the devices to create a network of ground paths across a surface of the insulating substrate. The ground paths effectively conduct RF noise to a circuit ground, causing the polysilicon ground web to eliminate or substantially attenuate RFI produced by the active devices without altering signal characteristics of the RF module. The disclosed solution also reduces RF noise leakage into the substrate, and can reduce RFI between neighboring RF modules.Type: ApplicationFiled: May 15, 2023Publication date: November 16, 2023Inventors: Ambarish Roy, Richard Peter Gulezian, II, Lakshminarayanan Alampoondi Venkatesan, Nuttapong Srirattana
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Publication number: 20230369338Abstract: Disclosed is a silicon on insulator (SOI) radio frequency (RF) module with noise reduction shielding to mitigate radio frequency interference (RFI) between active circuit devices within the module. The RF module includes various semiconductor active devices disposed upon an insulating substrate. The RF module can be a front-end module (FEM) with one or more charge pumps as active devices. A polysilicon web extends between and underneath the devices to create a network of ground paths across a surface of the insulating substrate. The ground paths effectively conduct RF noise to a circuit ground, causing the polysilicon ground web to eliminate or substantially attenuate RFI produced by the active devices without altering signal characteristics of the RF module. The disclosed solution also reduces RF noise leakage into the substrate, and can reduce RFI between neighboring RF modules.Type: ApplicationFiled: May 15, 2023Publication date: November 16, 2023Inventors: Ambarish Roy, Richard Peter Gulezian, II, Lakshminarayanan Alampoondi Venkatesan, Nuttapong Srirattana
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Patent number: 11817456Abstract: Devices and methods for layout-dependent voltage handling improvement in switch stacks. In some embodiments, a switching device can include a first terminal and a second terminal, a radio-frequency signal path implemented between the first terminal and the second terminal, and a plurality of switching elements connected in series to form a stack between the second terminal and ground. The stack can have an orientation relative to the radio-frequency signal path, and the switching elements can have a non-uniform distribution of a first parameter based in part on the orientation of the stack.Type: GrantFiled: January 3, 2022Date of Patent: November 14, 2023Assignee: Skyworks Solutions, Inc.Inventors: Guillaume Alexandre Blin, Ambarish Roy, Seungwoo Jung
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Publication number: 20230275127Abstract: Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a method of implementing a radio-frequency switching device can include providing an assembly of source, gate, and drain implemented on an active region; providing a first body contact implemented at a first end of the assembly; and providing a second body contact implemented at a second end of the assembly, the second end distal from the first end along a width of the radio-frequency switching device.Type: ApplicationFiled: May 4, 2023Publication date: August 31, 2023Inventors: Ambarish ROY, Guillaume Alexandre BLIN, Nuttapong SRIRATTANA
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Patent number: 11682699Abstract: Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.Type: GrantFiled: January 11, 2021Date of Patent: June 20, 2023Assignee: Skyworks Solutions, Inc.Inventors: Ambarish Roy, Guillaume Alexandre Blin, Nuttapong Srirattana
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Publication number: 20220254777Abstract: Devices and methods for layout-dependent voltage handling improvement in switch stacks. In some embodiments, a switching device can include a first terminal and a second terminal, a radio-frequency signal path implemented between the first terminal and the second terminal, and a plurality of switching elements connected in series to form a stack between the second terminal and ground. The stack can have an orientation relative to the radio-frequency signal path, and the switching elements can have a non-uniform distribution of a first parameter based in part on the orientation of the stack.Type: ApplicationFiled: January 3, 2022Publication date: August 11, 2022Inventors: Guillaume Alexandre BLIN, Ambarish ROY, Seungwoo JUNG
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Patent number: 11217581Abstract: Devices and methods for layout-dependent voltage handling improvement in switch stacks. In some embodiments, a switching device can include a first terminal and a second terminal, a radio-frequency signal path implemented between the first terminal and the second terminal, and a plurality of switching elements connected in series to form a stack between the second terminal and ground. The stack can have an orientation relative to the radio-frequency signal path, and the switching elements can have a non-uniform distribution of a first parameter based in part on the orientation of the stack.Type: GrantFiled: June 29, 2020Date of Patent: January 4, 2022Assignee: Skyworks Solutions, Inc.Inventors: Guillaume Alexandre Blin, Ambarish Roy, Seungwoo Jung
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Patent number: 11159158Abstract: A radio-frequency module includes a pole node, a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate, a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor, a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor, and a third coupling path coupling the first coupling path to the second coupling path.Type: GrantFiled: January 17, 2020Date of Patent: October 26, 2021Assignee: Skyworks Solutions, Inc.Inventors: Peter Harris Robert Popplewell, Ambarish Roy, Guillaume Alexandre Blin
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Publication number: 20210257458Abstract: Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.Type: ApplicationFiled: January 11, 2021Publication date: August 19, 2021Inventors: Ambarish ROY, Guillaume Alexandre BLIN, Nuttapong SRIRATTANA
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Publication number: 20210013198Abstract: Devices and methods for layout-dependent voltage handling improvement in switch stacks. In some embodiments, a switching device can include a first terminal and a second terminal, a radio-frequency signal path implemented between the first terminal and the second terminal, and a plurality of switching elements connected in series to form a stack between the second terminal and ground. The stack can have an orientation relative to the radio-frequency signal path, and the switching elements can have a non-uniform distribution of a first parameter based in part on the orientation of the stack.Type: ApplicationFiled: June 29, 2020Publication date: January 14, 2021Inventors: Guillaume Alexandre BLIN, Ambarish ROY, Seungwoo JUNG
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Patent number: 10840233Abstract: A switch fabrication method can include forming a plurality of elements, and connecting the elements in series between a first terminal and a second terminal, such that the elements include a first end element connected to the first terminal and a second end element connected to the second terminal. Each element can have a parameter such that the elements have a distribution of parameter values that decreases from the first end element for at least half of the elements to a minimum parameter value corresponding to an element between the first end element and the second end element. The minimum parameter value can be less than the parameter value of the second end element, and the parameter value of the first end element can be greater than or equal to the parameter value of the second end element.Type: GrantFiled: March 12, 2019Date of Patent: November 17, 2020Assignee: Skyworks Solutions, Inc.Inventors: Yu Zhu, David Scott Whitefield, Ambarish Roy, Guillaume Alexandre Blin
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Publication number: 20200227372Abstract: Various implementations enable management of parasitic capacitance and voltage handling of stacked integrated electronic devices. A method can include providing a stack in a radio frequency switch arrangement, the stack arranged in relation to a ground plane, the stack including a plurality of switching elements coupled in series with one another, the stack having first and second ends, the first end including a respective terminal of a first one of the plurality of switching elements. The method can also include forming a first solder bump coupled to the respective terminal of the first one of the plurality of switching elements such that at least a portion of the first solder bump overlaps with one or more of the plurality of switching elements, an overlap dimension set in relation to a first threshold value in order to set a respective contribution to a parasitic capacitance of the radio frequency switch arrangement.Type: ApplicationFiled: December 14, 2019Publication date: July 16, 2020Inventors: Ambarish ROY, Yu ZHU, Christophe MASSE
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Patent number: 10700063Abstract: Devices and methods for layout-dependent voltage handling improvement in switch stacks. In some embodiments, a switching device can include a first terminal and a second terminal, a radio-frequency signal path implemented between the first terminal and the second terminal, and a plurality of switching elements connected in series to form a stack between the second terminal and ground. The stack can have an orientation relative to the radio-frequency signal path, and the switching elements can have a non-uniform distribution of a first parameter based in part on the orientation of the stack.Type: GrantFiled: December 27, 2018Date of Patent: June 30, 2020Assignee: Skyworks Solutions, Inc.Inventors: Guillaume Alexandre Blin, Ambarish Roy, Seungwoo Jung
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Publication number: 20200153428Abstract: A radio-frequency module includes a pole node, a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate, a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor, a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor, and a third coupling path coupling the first coupling path to the second coupling pathType: ApplicationFiled: January 17, 2020Publication date: May 14, 2020Inventors: Peter Harris Robert POPPLEWELL, Ambarish ROY, Guillaume Alexandre BLIN
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Patent number: 10651812Abstract: Cascode amplifier having feedback circuits. In some embodiments, an amplifier can include a first transistor and a second transistor arranged in a cascode configuration, with each transistor having a gate. The amplifier can further include a first feedback circuit implemented between an output of the second transistor and the gate of the second transistor. The amplifier can further include a second feedback circuit implemented between the output of the second transistor and the gate of the first transistor.Type: GrantFiled: December 27, 2016Date of Patent: May 12, 2020Assignee: Skyworks Solutions, Inc.Inventors: Ambarish Roy, Eric Marsan, Stephen Richard Moreschi
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Patent number: 10541682Abstract: A radio-frequency switch includes a pole node, a throw node connected to the pole node via a radio-frequency signal path, the radio-frequency signal path including first, second, third and fourth field-effect transistors connected in series, each of the first, second, third and fourth field-effect transistors having a gate, a first coupling path coupling the gate of the first field-effect transistor to the gate of the second field-effect transistor, a second coupling path coupling the gate of the third field-effect transistor to the gate of the fourth field-effect transistor, and a third coupling path coupling the first coupling path to the second coupling path.Type: GrantFiled: November 8, 2017Date of Patent: January 21, 2020Assignee: Skyworks Solutions, Inc.Inventors: Peter Harris Robert Popplewell, Ambarish Roy, Guillaume Alexandre Blin
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Publication number: 20190386104Abstract: Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.Type: ApplicationFiled: December 28, 2018Publication date: December 19, 2019Inventors: Ambarish ROY, Guillaume Alexandre BLIN, Nuttapong SRIRATTANA
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Patent number: 10510702Abstract: Various implementations enable management of parasitic capacitance and voltage handling of stacked integrated electronic devices. Some implementations include a radio frequency switch arrangement having a ground plane, a stack and a first solder bump. The stack is arranged in relation to the ground plane, and includes switching elements coupled in series with one another, and a first end of the stack includes a respective terminal of a first one of the plurality of switching elements. The first solder bump is coupled to the respective terminal of the first one of the plurality of switching elements such that at least a portion of the first solder bump overlaps with one or more of the plurality of switching elements, an overlap dimension set in relation to a first threshold value in order to set a respective contribution to a parasitic capacitance of the radio frequency switch arrangement.Type: GrantFiled: August 13, 2018Date of Patent: December 17, 2019Assignee: Skyworks Solutions, Inc.Inventors: Ambarish Roy, Yu Zhu, Christophe Masse