Patents by Inventor Ameet Lann
Ameet Lann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7701779Abstract: A method for programming one or more reference cells is described. The reference cell is programmed a predetermined amount, its program state is sensed relative to a prescribed cell on the same die (e.g., a memory cell or a golden bit cell), and the programming process continues until the reference cell fails a preselected read operation. In one preferred embodiment, the memory cell used during the reference cell programming process is the cell in the memory array having the highest native threshold value. In another preferred embodiment, the memory cell used during the reference cell programming process is a native cell that is on-board the die containing the memory array, but not a cell within the memory array.Type: GrantFiled: September 11, 2006Date of Patent: April 20, 2010Assignee: Sajfun Semiconductors Ltd.Inventors: Eduardo Maayan, Boaz Eitan, Ameet Lann
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Patent number: 7512009Abstract: A method for programming one or more reference cells is described. The reference cell is programmed a predetermined amount, its program state is sensed relative to a prescribed cell on the same die (e.g., a memory cell or a golden bit cell), and the programming process continues until the reference cell fails a preselected read operation. In one preferred embodiment, the memory cell used during the reference cell programming process is the cell in the memory array having the highest native threshold value. In another preferred embodiment, the memory cell used during the reference cell programming process is a native cell that is on-board the die containing the memory array, but not a cell within the memory array.Type: GrantFiled: April 27, 2006Date of Patent: March 31, 2009Assignee: Saifun Semiconductors Ltd.Inventors: Eduardo Maayan, Ron Eliyahu, Ameet Lann, Boaz Eitan
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Publication number: 20070253248Abstract: A method for programming one or more reference cells is described. The reference cell is programmed a predetermined amount, its program state is sensed relative to a prescribed cell on the same die (e.g., a memory cell or a golden bit cell), and the programming process continues until the reference cell fails a preselected read operation. In one preferred embodiment, the memory cell used during the reference cell programming process is the cell in the memory array having the highest native threshold value. In another preferred embodiment, the memory cell used during the reference cell programming process is a native cell that is on-board the die containing the memory array, but not a cell within the memory array.Type: ApplicationFiled: September 11, 2006Publication date: November 1, 2007Inventors: Eduardo Maayan, Boaz Eitan, Ameet Lann
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Publication number: 20070036007Abstract: A method for programming in parallel reference cells to be used for operating other cells of a memory cell array, the method including: a) reading each of the reference cells of a memory cell array with a sense amplifier, the sense amplifier providing an output indicative of a programmed state of the reference cell relative to another bit in the array, b) reading each of the reference cells of a memory cell array with a sense amplifier while using read conditions to determine if the reference cells have reached a target level, c) determining if a programming pulse should be applied to the reference cell by comparing the output of the sense amplifier to a predefined target “0” or “1”, d) setting a buffer bit, corresponding to the output of the sense amplifier, in a sticky bit buffer to a first logical state if the reference cell needs to be programmed, and not changing a logical state of the buffer bit if the reference cell does not need to be programmed, e) performing steps a)-d) for a desired address range iType: ApplicationFiled: August 9, 2005Publication date: February 15, 2007Applicant: Saifun Semiconductors, Ltd.Inventors: Ameet Lann, Kobi Danon, Mori Edan, Shay Galanti
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Publication number: 20060268621Abstract: A method for programming one or more reference cells is described. The reference cell is programmed a predetermined amount, its program state is sensed relative to a prescribed cell on the same die (e.g., a memory cell or a golden bit cell), and the programming process continues until the reference cell fails a preselected read operation. In one preferred embodiment, the memory cell used during the reference cell programming process is the cell in the memory array having the highest native threshold value. In another preferred embodiment, the memory cell used during the reference cell programming process is a native cell that is on-board the die containing the memory array, but not a cell within the memory array.Type: ApplicationFiled: April 27, 2006Publication date: November 30, 2006Applicant: Saifun Semiconductors, Ltd.Inventors: Eduardo Maayan, Ron Eliyahu, Ameet Lann, Boaz Eitan
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Patent number: 7064983Abstract: A method for programming one or more reference cells is described. The reference cell is programmed a predetermined amount, its program state is sensed relative to a prescribed cell on the same die (e.g., a memory cell or a golden bit cell), and the programming process continues until the reference cell fails a preselected read operation. In one preferred embodiment, the memory cell used during the reference cell programming process is the cell in the memory array having the highest native threshold value. In another preferred embodiment, the memory cell used during the reference cell programming process is a native cell that is on-board the die containing the memory array, but not a cell within the memory array.Type: GrantFiled: June 5, 2003Date of Patent: June 20, 2006Assignee: Saifum Semiconductors Ltd.Inventors: Eduardo Maayan, Ron Eliyahu, Ameet Lann, Boaz Eitan
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Publication number: 20040081010Abstract: A method for programming one or more reference cells is described. The reference cell is programmed a predetermined amount, its program state is sensed relative to a prescribed cell on the same die (e.g., a memory cell or a golden bit cell), and the programming process continues until the reference cell fails a preselected read operation. In one preferred embodiment, the memory cell used during the reference cell programming process is the cell in the memory array having the highest native threshold value. In another preferred embodiment, the memory cell used during the reference cell programming process is a native cell that is on-board the die containing the memory array, but not a cell within the memory array.Type: ApplicationFiled: June 5, 2003Publication date: April 29, 2004Inventors: Eduardo Maayan, Ron Eliyahu, Ameet Lann, Boaz Eitan
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Patent number: 6584017Abstract: A method for programming one or more reference cells is described. The reference cell is programmed a predetermined amount, its program state is sensed relative to a prescribed cell on the same die (e.g., a memory cell or a golden bit cell), and the programming process continues until the reference cell fails a preselected read operation. In one preferred embodiment, the memory cell used during the reference cell programming process is the cell in the memory array having the highest native threshold value. In another preferred embodiment, the memory cell used during the reference cell programming process is a native cell that is onboard the die containing the memory array, but not a cell within the memory array.Type: GrantFiled: April 5, 2001Date of Patent: June 24, 2003Assignee: Saifun Semiconductors Ltd.Inventors: Eduardo Maayan, Ron Eliyahu, Ameet Lann, Boaz Eitan
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Publication number: 20020145911Abstract: A method for programming one or more reference cells is described. The reference cell is programmed a predetermined amount, its program state is sensed relative to a prescribed cell on the same die (e.g., a memory cell or a golden bit cell), and the programming process continues until the reference cell fails a preselected read operation. In one preferred embodiment, the memory cell used during the reference cell programming process is the cell in the memory array having the highest native threshold value. In another preferred embodiment, the memory cell used during the reference cell programming process is a native cell that is onboard the die containing the memory array, but not a cell within the memory array.Type: ApplicationFiled: April 5, 2001Publication date: October 10, 2002Inventors: Eduardo Maayan, Ron Eliyahu, Ameet Lann, Boaz Eitan