Patents by Inventor Amihood Doron

Amihood Doron has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Virtual semiconductor nanowire, and methods of using same
    Patent number: 8318505
    Abstract: A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone.
    Type: Grant
    Filed: May 14, 2012
    Date of Patent: November 27, 2012
    Assignee: Intel Corporation
    Inventors: Gil Shalev, Amihood Doron, Ariel Cohen
  • VIRTUAL SEMICONDUCTOR NANOWIRE, AND METHODS OF USING SAME
    Publication number: 20120223371
    Abstract: A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone.
    Type: Application
    Filed: May 14, 2012
    Publication date: September 6, 2012
    Inventors: Gil Shalev, Amihood Doron, Ariel Cohen
  • Virtual semiconductor nanowire, and methods of using same
    Patent number: 8241913
    Abstract: A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: August 14, 2012
    Assignee: Intel Corporation
    Inventors: Gil Shalev, Amihood Doron, Ariel Cohen
  • Flexible gate electrode device for bio-sensing
    Patent number: 8093667
    Abstract: Briefly, disclosed is an apparatus and method for detecting an analyte wherein a flexible gate electrode may respond to mechanical stress and/or electrostatic changes induced by bonding of a biomolecular probe and an analyte.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: January 10, 2012
    Assignee: Intel Corporation
    Inventors: Amihood Doron, Ilan Levy
  • VIRTUAL SEMICONDUCTOR NANOWIRE, AND METHODS OF USING SAME
    Publication number: 20110304317
    Abstract: A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone.
    Type: Application
    Filed: August 23, 2011
    Publication date: December 15, 2011
    Inventors: Gil Shalev, Amihood Doron, Ariel Cohen
  • Virtual semiconductor nanowire, and methods of using same
    Patent number: 8007727
    Abstract: A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone.
    Type: Grant
    Filed: May 30, 2008
    Date of Patent: August 30, 2011
    Assignee: Intel Corporation
    Inventors: Gil Shalev, Amihood Doron, Ariel Cohen
  • ELECTRONIC SIGNAL AMPLIFICATION IN FIELD EFFECT DEVICE BASED CHEMICAL SENSORS
    Publication number: 20100112719
    Abstract: Briefly, disclosed is a method and apparatus for detecting an analyte wherein an enhanced charge marker may enhance steric, electrostatic, optic and/or mechanical changes associated with a recognition event between an analyte and a probe.
    Type: Application
    Filed: November 6, 2008
    Publication date: May 6, 2010
    Inventors: Amihood Doron, Ilan Levy
  • FLEXIBLE GATE ELECTRODE DEVICE FOR BIO-SENSING
    Publication number: 20090321276
    Abstract: Briefly, disclosed is an apparatus and method for detecting an analyte wherein a flexible gate electrode may respond to mechanical stress and/or electrostatic changes induced by bonding of a biomolecular probe and an analyte.
    Type: Application
    Filed: June 30, 2008
    Publication date: December 31, 2009
    Inventors: Amihood Doron, Ilan Levy
  • Virtual semiconductor nanowire, and methods of using same
    Publication number: 20090294805
    Abstract: A multiple-gate field-effect transistor includes a fluid in a top gate, two lateral gates, and a bottom gate. The multiple-gate field-effect transistor also includes a patterned depletion zone and a virtual depletion zone that has a lesser width than the patterned depletion zone. The virtual depletion zone width creates a virtual semiconductor nanowire that is lesser in width than the patterned depletion zone.
    Type: Application
    Filed: May 30, 2008
    Publication date: December 3, 2009
    Inventors: Gil Shalev, Amihood Doron, Ariel Cohen