Abstract: A system and method for growing a gallium nitride (GaN) structure that includes providing a template; and growing at least a first GaN layer on the template using a first sputtering process, wherein the first sputtering process includes: controlling a temperature of a sputtering target, and modulating between a gallium-rich condition and a gallium-lean condition, wherein the gallium-rich condition includes a gallium-to-nitrogen ratio having a first value that is greater than 1, and wherein the gallium-lean condition includes the gallium-to-nitrogen ratio having a second value that is less than the first value. Some embodiments include a load lock configured to load a substrate wafer into the system and remove the GaN structure from the system; and a plurality of deposition chambers, wherein the plurality of deposition chambers includes a GaN-deposition chamber configured to grow at least the first GaN layer on a template that includes the substrate wafer.

Abstract: A method for providing a periodic table group III nitrides materials based heterojunction device comprising growing all layers therein by molecular beam epitaxy to result having a crystal defects concentration sufficiently small to allow electron mobilities in the sheet charge region to exceed 1100 cm2/volt-second. The invention includes the heterojunction device provided by this method.