Abstract: Structures and methods operable to detect radiation are described. The structure includes a dual-layer detector imaging device that permits one-shot of x-rays for dual-energy imaging. In one embodiment, a front layer of the detector includes a photon counting detector and aback layer of the detector includes an an x-ray radiation source for absorbing x-ray radiation to separate radiation into low energy and high energy components for incidence upon an imaging object. In an embodiment, the imaging object includes a contrast agent material having a characteristic K-edge atomic energy band level, and the separation filter absorbing the X-ray radiation is near the K-edge atomic energy band level.

Abstract: Provided are a device for detecting sub-atomic particles and method of fabrication thereof. The device includes a plurality of scintillators, a detector provided on a first end of the plurality of scintillators and a prismatoid provided on a second end of the plurality of scintillators. The prismatoid redirects light between adjacent scintillators of the plurality of scintillators.

Abstract: Provided is a particle detection device and method of fabrication thereof. The particle detection device includes a scintillator array that includes a plurality of scintillator crystals; a plurality of detectors provided on a bottom end of the scintillator array; and a plurality of prismatoids provided on a top end of the scintillator array. Prismatoids of the plurality of prismatoids are configured to redirect particles between top ends of crystals of the scintillator array. Bottom ends of a first group of crystals of the scintillator array are configured to direct particles to a first detector of the plurality of detectors and bottom ends of a second group of crystals of the scintillator array are configured to direct particles to a second detector substantially adjacent to the first detector.

Abstract: Provided area device for detecting sub-atomic particles and method of fabrication thereof. The device includes a plurality of scintillators, a detector provided on a first end of the plurality of scintillators and a prismatoid provided on a second end of the plurality of scintillators. The prismatoid redirects light between adjacent scintillators of the plurality of scintillators.

Abstract: A multiplexing scheme for both energy and timing information is provided for a particle detection system having an optical sensor array with multiple optical sensors. Each optical sensor is associated with multiple scintillator modules. The system has a segmented prismatoid light guide comprising multiple prismatoid segments. Each segment is associated with multiple optical sensors, where the optical sensors are adjacent. One end each scintillator module is in contact with its associated optical sensor and the other is in contact with its associated segment. Multiple optical sensors may be connected to an energy readout channel, respectively, such that optical sensors associated with the same segments are not connected to the same energy readout channel. Each energy readout channel has at least two timestamps associated therewith.

Abstract: A multiplexing scheme, a system for reading out signals from an optical sensor array, particle detection devices and systems are provided. For example, the optical sensor array may comprise plurality of optical sensors arranged in rows and columns. In the multiplexing scheme, a readout ASIC may be electrically connected to the plurality of optical sensors via a plurality of first channels and a plurality of second channels. Each first channel may be electrically connected to a subset of optical sensors in a corresponding row of the optical sensor array, where there may be at least one optical sensor between connections. Each second channel may be electrically connected to a subset of optical sensors in a corresponding column of the optical sensor array, where there may be at least one optical sensor between connections.

Abstract: Provided is a particle detection device and method of fabrication thereof. The particle detection device includes a scintillator array that includes a plurality of scintillator crystals; a plurality of detectors provided on a bottom end of the scintillator array; and a plurality of prismatoids provided on a top end of the scintillator array. Prismatoids of the plurality of prismatoids are configured to redirect particles between top ends of crystals of the scintillator array. Bottom ends of a first group of crystals of the scintillator array are configured to direct particles to a first detector of the plurality of detectors and bottom ends of a second group of crystals of the scintillator array are configured to direct particles to a second detector substantially adjacent to the first detector.

Abstract: Tapered scintillator modules and detection devices having tapered scintillator modules in at least the end that contacts an optical sensor where the taper depends on the location of the scintillator module within the active area of the optical sensor is provided. Tapering of the scintillator modules may be close to the interface between the optical sensor and the module to minimize light leak to neighboring pixels at the interface while still allowing the detection device to retain high geometric efficiency and sensitivity to incident gamma rays since the distal end may not be tapered, which has a highest probability for gamma ray interaction based on Beer-Lambert law for photoelectric absorption.

Abstract: Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

Abstract: The disclosure is directed to a device that includes a cavity formed by a plurality of rails, the plurality of rails connected to both a first support and a second support, each at predetermined intervals about a circumference of the first support and the second support; and at least one particle detection device operably connected to each rail of the plurality of rails. The disclosure is also directed to a scanner that includes the device, and a processor.

Abstract: A hybrid radiation imaging sensor includes a low x-ray attenuating substrate, a photoconductor disposed over the substrate, and a scintillator disposed over the photoconductor. By combining direct x-ray conversion to electron-hole pairs in the photo-conductor with indirect conversion of x-rays downstream of the photoconductor within the scintillator, improved x-ray imaging can be attained through an electronic readout located upstream of both the photoconductor and the scintillator without the need for excessive x-ray dosing.

Abstract: Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

Abstract: Provided is are a particle detection device and method of fabrication thereof. The particle detection device includes a scintillator array that includes a plurality of scintillator crystals; a plurality of detectors provided on a bottom end of the scintillator array; and a plurality of prismatoids provided on a top end of the scintillator array. Prismatoids of the plurality of prismatoids are configured to redirect particles between top ends of crystals of the scintillator array. Bottom ends of a first group of crystals of the scintillator array are configured to direct particles to a first detector of the plurality of detectors and bottom ends of a second group of crystals of the scintillator array are configured to direct particles to a second detector substantially adjacent to the first detector.

Abstract: A photomultiplier containing a solid-state photoconductive film composed of amorphous selenium (a-Se) is provided. In the a-Se containing photomultiplier, a hole-blocking layer is provided that maximizes gain and maintains low dark conductivity. Also, the hole-blocking layer achieves reliable and repeatable impact ionization without irreversible breakdown. The hole-blocking layer is a non-insulating metal oxide having a dielectric constant (k) of greater than 10.

Abstract: Provided is a particle detection device and method of fabrication thereof. The particle detection device includes a scintillator array that includes a plurality of scintillator crystals; a plurality of detectors provided on a bottom end of the scintillator array; and a plurality of prismatoids provided on a top end of the scintillator array. Prismatoids of the plurality of prismatoids are configured to redirect particles between top ends of crystals of the scintillator array. Bottom ends of a first group of crystals of the scintillator array are configured to direct particles to a first detector of the plurality of detectors and bottom ends of a second group of crystals of the scintillator array are configured to direct particles to a second detector substantially adjacent to the first detector.

Abstract: Provided area device for detecting sub-atomic particles and method of fabrication thereof. The device includes a plurality of scintillators, a detector provided on a first end of the plurality of scintillators and a prismatoid provided on a second end of the plurality of scintillators. The prismatoid redirects light between adjacent scintillators of the plurality of scintillators.

Abstract: Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

Abstract: Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.

Abstract: Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

Abstract: Provided is a field shaping multi-well photomultiplier and method for fabrication thereof. The photomultiplier includes a field-shaping multi-well avalanche detector, including a lower insulator, an a-Se photoconductive layer and an upper insulator. The a-Se photoconductive layer is positioned between the lower insulator and the upper insulator. A light interaction region, an avalanche region, and a collection region are provided along a length of the photomultiplier, and the light interaction region and the collection region are positioned on opposite sides of the avalanche region.