Abstract: A processing chamber may include a gas distribution member, a substrate support, and a pumping liner. The gas distribution member and the substrate support may at least in part define a processing volume. The pumping liner may define an internal volume in fluid communication with the processing volume via a plurality of apertures of the pumping liner circumferentially disposed about the processing volume. The processing chamber may further include a flow control mechanism operable to direct fluid flow from the internal volume of the pumping liner into the processing volume via a subset of the plurality of apertures of the pumping liner during fluid distribution into the processing volume from the gas distribution member.

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

Abstract: A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.

Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

Abstract: Semiconductor processing systems according to embodiments of the present technology may include a chamber body having sidewalls and a base. The chamber body may define an internal volume. The systems may include a substrate support assembly having a shaft and a platen coupled with the shaft along a first surface of the platen. The semiconductor processing systems may include a cover plate positioned on the platen of the substrate support assembly along a second surface of the platen opposite the first surface. The cover plate may include a flange extending about an exterior region of the cover plate. The flange may be in direct contact with the platen. The cover plate may include an upper wall vertically offset from the flange. An interior volume may be defined between the upper wall and the platen of the substrate support assembly.

Abstract: The present invention relates to a pharmaceutical composition comprising Varenicline or its pharmaceutically acceptable salt with reduced amount of nitrosamine impurity and a process for preparing the same.

Abstract: An apparatus and a method for performing positioning using a Global Navigation Satellite System (GNSS) with a state machine based localization engine are provided. When the apparatus receives GNSS signals, the apparatus provides the localization engine to process the GNSS signals, and determines, based on a GNSS status and a position-velocity-time (PVT) status, a state of the localization engine. Specifically, the state of the localization engine is switchable between at least 3 states, including a dead reckoning state, a tightly coupling state, and a loosely coupling state. Once the state is determined, the localization engine may determine a local accuracy status based on the state of the localization engine. Thus, a downstream module on the apparatus may use the local accuracy status to perform a corresponding downstream action.

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

Abstract: Exemplary processing chambers may include a body having sidewalls and a bottom plate. The bottom plate may define an exhaust opening and a gas inlet. The chambers may include a faceplate seated atop the body. The chambers may include a purge ring seated atop the bottom plate. The purge ring may include a ring body having an outer edge and an inner edge defining an open interior. The ring body may have a surface disposed against the bottom plate. The ring body may define an opening aligned with the exhaust opening. The surface may define a fluid port aligned and coupled with the gas inlet. The surface may define arcuate grooves extending into the fluid port. The arcuate grooves may be parallel with the inner and outer edges. The surface may define radial grooves extending from the open interior to an arcuate groove.

Abstract: A device may receive historical risk data identifying historical risks associated with entities, and historical compliance data identifying historical compliance actions performed by the entities. The device may train a machine learning model with the historical risk data and the historical compliance data to generate a structured semantic model, and may receive entity risk data identifying new and existing risks associated with an entity. The device may receive entity compliance data identifying new and existing compliance actions performed by the entity, and may process the entity risk data and the entity compliance data, with the structured semantic model, to determine risk and compliance insights for the entity. The risk and compliance insights may include insights associated with a key performance indicator, a compliance issue, a regulatory issue, an operational risk, a compliance risk, or a qualification of controls. The device may perform actions based on the risk and compliance insights.

Abstract: An apparatus and a method for providing a global localization output are provided. When the apparatus receives navigation signals, the apparatus processes the signals to determine, based on a fixed earth-centered, earth-fixed (ECEF) reference pose of a reference point in an ECEF coordinate, a new ECEF pose, and to convert the fixed ECEF reference pose to an east-north-up (ENU) reference pose in an ENU coordinate. When the apparatus determines that a jump occurs in the new ECEF pose based on a pose change between the new ECEF pose and a previous ECEF pose, the apparatus calculates a reference shift of the ENU reference pose based on the pose change to absorb the jump in the ENU coordinate, and updates the ENU reference pose based on the reference shift. Thus, a new ENU local pose may be obtained using the ENU reference pose.

Abstract: An apparatus and a method for providing a global localization output are provided. When the apparatus receives navigation signals, the apparatus processes the signals to determine, based on a fixed earth-centered, earth-fixed (ECEF) reference pose of a reference point in an ECEF coordinate, a new ECEF pose, and to convert the fixed ECEF reference pose to an east-north-up (ENU) reference pose in an ENU coordinate. When the apparatus determines that a jump occurs in the new ECEF pose based on a pose change between the new ECEF pose and a previous ECEF pose, the apparatus calculates a reference shift of the ENU reference pose based on the pose change to absorb the jump in the ENU coordinate, and updates the ENU reference pose based on the reference shift. Thus, a new ENU local pose may be obtained using the ENU reference pose.

Abstract: An apparatus and a method for performing positioning using a Global Navigation Satellite System (GNSS) with a state machine based localization engine are provided. When the apparatus receives GNSS signals, the apparatus provides the localization engine to process the GNSS signals, and determines, based on a GNSS status and a position-velocity-time (PVT) status, a state of the localization engine. Specifically, the state of the localization engine is switchable between at least 3 states, including a dead reckoning state, a tightly coupling state, and a loosely coupling state. Once the state is determined, the localization engine may determine a local accuracy status based on the state of the localization engine. Thus, a downstream module on the apparatus may use the local accuracy status to perform a corresponding downstream action.

Abstract: Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

Abstract: Exemplary semiconductor processing chambers may include a substrate support including a top surface. A peripheral edge region of the top surface may be recessed relative to a medial region of the top surface. The chambers may include a pumping liner disposed about an exterior surface of the substrate support. The chambers may include a liner disposed between the substrate support and the pumping liner. The liner may be spaced apart from the exterior surface to define a purge lumen between the liner and the substrate support. The chambers may include an edge ring seated on the peripheral edge region. The edge ring may extend beyond a peripheral edge of the substrate support and above a portion of the liner. A gap may be formed between a bottom surface of the edge ring and a top surface of the liner. The gap and the purge lumen may be fluidly coupled.

Abstract: Exemplary semiconductor processing systems may include an output manifold that defines at least one plasma outlet. The systems may include a gasbox disposed beneath the output manifold. The gasbox may include an inlet side facing the output manifold and an outlet side opposite the inlet side. The gasbox may include an inner wall that defines a central fluid lumen. The inner wall may taper outward from the inlet side to the outlet side. The systems may include an annular spacer disposed below the gasbox. An inner diameter of the annular spacer may be greater than a largest inner diameter of the central fluid lumen. The systems may include a faceplate disposed beneath the annular spacer. The faceplate may define a plurality of apertures extending through a thickness of the faceplate.

Abstract: Disclosed herein is a fitting for attachment to a part. The fitting comprises a body and a nut assembly. The body comprises a nut portion. The nut portion comprises a nut receptacle having a converging portion and a central axis. The nut assembly comprises a seal and a nut. The seal is within the nut receptacle, non-translatably fixed relative to the nut receptacle, and spaced apart from the converging portion. The nut is within the nut receptacle, is translatable along the central axis of the nut receptacle, and comprises resilient fingers that are resiliently deformable away from the central axis. Translation of the nut along the central axis is constrained by the converging portion and the seal.