Patents by Inventor Amit Chatterjee
Amit Chatterjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240087572Abstract: Systems are configured to obtain streaming audio data comprising language utterances, continuously decode the streaming audio data in order to generate decoded streaming audio data and determine whether a linguistic boundary exists within an initial segment of decoded streaming audio data. When a linguistic boundary is determined to exist, the systems apply a punctuation at the linguistic boundary and output a first portion of the initial segment of the streaming audio data ending at the linguistic boundary while refraining from outputting a second portion of the initial segment which is located temporally subsequent to the first portion of the initial segment. Systems are also configured to delay the output until predetermined punctuation validation processes have been performed.Type: ApplicationFiled: November 14, 2022Publication date: March 14, 2024Inventors: Sayan Dev PATHAK, Amit Kumar AGARWAL, Amy Parag SHAH, Sourish CHATTERJEE, Zoltan ROMOCSA, Christopher Hakan BASOGLU, Piyush BEHRE, Shuangyu CHANG, Emilian Yordanov STOIMENOV
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Patent number: 11078119Abstract: The present disclosure relates to a composite of sintered mullite reinforced corundum granules and a method for its preparation. The composite comprises mullite and corundum in an interlocking microstructure. The process for preparing the composite involves the steps of admixing the raw materials followed by sintering to obtain the composite comprising sintered mullite reinforced corundum granules.Type: GrantFiled: June 5, 2018Date of Patent: August 3, 2021Assignee: ASHAPURA MINECHEM LTD.Inventors: Chetan Navnitlal Shah, Manan Chetan Shah, Amit Chatterjee, Anurag Tilak
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Publication number: 20180282223Abstract: The present disclosure relates to a composite of sintered mullite reinforced corundum granules and a method for its preparation. The composite comprises mullite and corundum in an interlocking microstructure. The process for preparing the composite involves the steps of admixing the raw materials followed by sintering to obtain the composite comprising sintered mullite reinforced corundum granules.Type: ApplicationFiled: June 5, 2018Publication date: October 4, 2018Inventors: Chetan Navnitlal Shah, Manan Chetan Shah, Amit Chatterjee, Anurag Tilak
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Publication number: 20170073275Abstract: The present disclosure relates to a composite of sintered mullite reinforced corundum granules and a method for its preparation. The composite comprises mullite and corundum in an interlocking microstructure. The process for preparing the composite involves the steps of admixing the raw materials followed by sintering to obtain the composite comprising sintered mullite reinforced corundum granules.Type: ApplicationFiled: October 19, 2015Publication date: March 16, 2017Inventors: Chetan Navnitlal Shah, Manan Chetan Shah, Amit Chatterjee, Anurag Tilak
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Patent number: 9583333Abstract: Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).Type: GrantFiled: October 22, 2014Date of Patent: February 28, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Amit Chatterjee, Abhijit Basu Mallick, Nitin K. Ingle
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Patent number: 9257330Abstract: Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules.Type: GrantFiled: September 11, 2014Date of Patent: February 9, 2016Assignee: Applied Materials, Inc.Inventors: Amit Chatterjee, Geetika Bajaj, Pramit Manna, He Ren, Tapash Chakraborty, Srinivas D. Nemani, Mehul Naik, Robert Jan visser, Abhijit Basu Mallick
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Patent number: 9219006Abstract: Embodiments of the present invention generally relate to methods for forming a flowable carbon-containing film on a substrate. In one embodiment, an oxygen-containing gas is flowed into a remote plasma region to produce oxygen-containing plasma effluents, and a carbon-containing gas is combined with the oxygen-containing plasma effluents in a substrate processing region which contains the substrate. A carbon-containing film is formed in trenches which are formed on the substrate and a low K dielectric material is deposited on the carbon-containing film in the trenches. The carbon-containing film is decomposed by an UV treatment and airgaps are formed in the trenches under the low K dielectric material.Type: GrantFiled: January 13, 2014Date of Patent: December 22, 2015Assignee: APPLIED MATERIALS, INC.Inventor: Amit Chatterjee
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Publication number: 20150200125Abstract: Embodiments of the present invention generally relate to methods for forming a flowable carbon-containing film on a substrate. In one embodiment, an oxygen-containing gas is flowed into a remote plasma region to produce oxygen-containing plasma effluents, and a carbon-containing gas is combined with the oxygen-containing plasma effluents in a substrate processing region which contains the substrate. A carbon-containing film is formed in trenches which are formed on the substrate and a low K dielectric material is deposited on the carbon-containing film in the trenches. The carbon-containing film is decomposed by an UV treatment and airgaps are formed in the trenches under the low K dielectric material.Type: ApplicationFiled: January 13, 2014Publication date: July 16, 2015Inventor: Amit CHATTERJEE
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Publication number: 20150167160Abstract: One or more precursor gases, such as one or more silicon-containing gases, which may be one or more organosilicon and/or tetraalkyl orthosilicate gases, are introduced into a processing chamber and exposed to radicals. Dielectric films deposited using the techniques disclosed herein may contain silicon. The deposited films may exhibit few defects, low shrinkage, and high etch selectivity, mechanical stability, and thermal stability. The deposition conditions can be very mild, so damage to the substrate and the as-deposited films from UV radiation and ion bombardment is minimal or nonexistent.Type: ApplicationFiled: May 5, 2014Publication date: June 18, 2015Inventors: Yihong CHEN, Shaunak MUKHERJEE, Amit CHATTERJEE, Pramit MANNA, Abhijit Basu MALLICK, Ningli LIU, Jianhua ZHOU, Juan Carlos ROCHA-ALVAREZ, Mukund SRINIVASAN
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Publication number: 20150147879Abstract: Methods of depositing thin, low dielectric constant layers that are effective diffusion barriers on metal interconnects of semiconductor circuits are described. A self-assembled monolayer (SAM) of molecules each having a head moiety and a tail moiety are deposited on the metal. The SAM molecules self-align, wherein the head moiety is formulated to selectively bond to the metal layer leaving the tail moiety disposed at a distal end of the molecule. A dielectric layer is subsequently deposited on the SAM, chemically bonding to the tail moiety of the SAM molecules.Type: ApplicationFiled: September 11, 2014Publication date: May 28, 2015Inventors: Amit Chatterjee, Geetika Bajaj, Pramit Manna, He Ren, Tapash Chakraborty, Srinivas D. Nemani, Mehul Naik, Robert Jan visser, Abhijit Basu Mallick
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Publication number: 20150126045Abstract: Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).Type: ApplicationFiled: October 22, 2014Publication date: May 7, 2015Inventors: Amit CHATTERJEE, Abhijit Basu MALLICK, Nitin K. INGLE
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Patent number: 8906454Abstract: Methods for depositing metal-polymer composite materials atop a substrate are provided herein. In some embodiments, a method of depositing a metal-polymer composite material atop a substrate disposed in a hot wire chemical vapor deposition (HWCVD) chamber may include flowing a current through a plurality of filaments disposed in the HWCVD chamber, the filaments comprising a metal to be deposited atop a substrate; providing a process gas comprising an initiator and a monomer to the HWCVD chamber; and depositing a metal-polymer composite material on the substrate using species decomposed from the process gas and metal atoms ejected from the plurality of filaments.Type: GrantFiled: September 10, 2012Date of Patent: December 9, 2014Assignee: Applied Materials, Inc.Inventors: Sukti Chatterjee, Amit Chatterjee
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Patent number: 8889566Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.Type: GrantFiled: November 5, 2012Date of Patent: November 18, 2014Assignee: Applied Materials, Inc.Inventors: Amit Chatterjee, Abhijit Basu Mallick, Nitin K. Ingle, Brian Underwood, Kiran V. Thadani, Xiaolin Chen, Abhishek Dube, Jingmei Liang
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Publication number: 20140073144Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.Type: ApplicationFiled: November 5, 2012Publication date: March 13, 2014Inventors: Amit Chatterjee, Abhijit Basu Mallick, Nitin K. Ingle, Brian Underwood, Kiran V. Thadani, Xiaolin Chen, Abhishek Dube, Jingmei Liang
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Patent number: 8465903Abstract: Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.Type: GrantFiled: October 6, 2011Date of Patent: June 18, 2013Assignee: Applied Materials, Inc.Inventors: Timothy W. Weidman, Timothy Michaelson, Paul Deaton, Nitin K. Ingle, Abhijit Basu Mallick, Amit Chatterjee
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Publication number: 20130065401Abstract: Methods for depositing metal-polymer composite materials atop a substrate are provided herein. In some embodiments, a method of depositing a metal-polymer composite material atop a substrate disposed in a hot wire chemical vapor deposition (HWCVD) chamber may include flowing a current through a plurality of filaments disposed in the HWCVD chamber, the filaments comprising a metal to be deposited atop a substrate; providing a process gas comprising an initiator and a monomer to the HWCVD chamber; and depositing a metal-polymer composite material on the substrate using species decomposed from the process gas and metal atoms ejected from the plurality of filaments.Type: ApplicationFiled: September 10, 2012Publication date: March 14, 2013Applicant: APPLIED MATERIALS, INC.Inventors: SUKTI CHATTERJEE, AMIT CHATTERJEE
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Patent number: 8388787Abstract: The invention relates to a method of making a composite sheet. A plurality of layers is first assembled, each layer being comprised of an untreated, unidirectional array of strands. The assembled layers are then placed adjacent one another to form an assembled sheet, with adjacent layers being in a non-parallel orientation, and without any of the layers having been treated with a matrix or binding component. The assembled sheet is then impregnated with a matrix component, which comprises a binding component and may also comprise a radiation-absorbing component.Type: GrantFiled: July 13, 2010Date of Patent: March 5, 2013Assignee: Gentex CorporationInventors: Ramesh Kaushal, Leonard Peter Frieder, John LaJesse, Amit Chatterjee
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Publication number: 20120088193Abstract: Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.Type: ApplicationFiled: October 6, 2011Publication date: April 12, 2012Applicant: Applied Materials, Inc.Inventors: Timothy W. Weidman, Timothy Michaelson, Paul Deaton, Nitin K. Ingle, Abhijit Basu Mallick, Amit Chatterjee
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Publication number: 20110119113Abstract: A centralized emission and energy management system is implemented via a server that is accessible to a client organization. In response to a request to recommend best practices for an organizational unit to reduce environmental impact or energy usage, the system selects relevant best practices based on reduction goals and the organizational unit's particular industry. Based on attribute values for the relevant best practices and the organizational unit, the system filters/ranks the relevant best practices to form recommended best practices. The system may transmit a forecast of energy savings, cost impacts, and environmental impacts over an implementation time period for a draft procedure created from a recommended best practice. The system may generate a request for proposal (RFP) including an approved procedure to a vendor. The system may maintain ratings and feedbacks on the approved procedure and the vendor.Type: ApplicationFiled: August 20, 2010Publication date: May 19, 2011Applicant: HARA SOFTWARE, INC.Inventors: Amit Chatterjee, Udo Waibel, Jeffrey S. Risberg, James J. Caputo
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Publication number: 20110011520Abstract: The invention relates to a method of making a composite sheet. A plurality of layers is first assembled, each layer being comprised of an untreated, unidirectional array of strands. The assembled layers are then placed adjacent one another to form an assembled sheet, with adjacent layers being in a non-parallel orientation, and without any of the layers having been treated with a matrix or binding component. The assembled sheet is then impregnated with a matrix component, which comprises a binding component and may also comprise a radiation-absorbing component.Type: ApplicationFiled: July 13, 2010Publication date: January 20, 2011Applicant: Gentex CorporationInventors: Ramesh Kaushal, Leonard Peter Frieder, John LaJesse, Amit Chatterjee