Abstract: A method of forming an electrical contact in a semiconductor structure includes performing a patterning process to form a mask on a semiconductor structure, the semiconductor structure comprising a first semiconductor region, a second semiconductor region, a dielectric layer having a first opening over the first semiconductor region and a second opening over the second semiconductor region, wherein the mask covers an exposed surface of the second semiconductor region within the second opening, performing an amorphization ion implant process to amorphize an exposed surface of the first semiconductor region within the first opening, performing a removal process to remove the mask, performing a selective epitaxial deposition process, to epitaxially form a contact layer on the exposed surface of the second semiconductor region, and performing a recrystallization anneal process to recrystallize the amorphized surface of the first semiconductor region.

Abstract: Embodiments disclosed herein include a method for determining a temperature error of a pyrometer. In an embodiment, the method comprises measuring a first signal with a first sensor of the pyrometer and measuring a second signal with a second sensor of the pyrometer. In an embodiment, the method further comprises determining a reflectivity of a reflector plate from the first signal and the second signal, and determining the temperature error using the reflectivity.

Abstract: Aspects of the present disclosure are drawn to microfluidic devices. An exemplary microfluidic device may include a disc having at least one microfluidic channel pathway extending radially outward from a center of the disc. The channel pathway may include an inlet for receiving a sample, a first chamber fluidly connected to the inlet, and a second chamber positioned radially inward relative to and fluidly connected to the first chamber. The channel pathway may also include at least one third chamber positioned radially outward of the second chamber and fluidly connected to the second chamber via an outlet channel The channel pathway may include at least one fourth chamber fluidly connected to the at least one third chamber and positioned radially outward of the at least one third chamber. At least one of the first, second, third, or fourth chambers may contain at least one reagent pre-loaded into the disc.