Abstract: Disclosed are methods of forming alternating phase shift circuitry fabrication masks, methods of forming circuitry fabrication masks having a subtractive alternating phase shift region, and alternating phase shift masks. In one implementation, a method of forming an alternating phase shift circuitry fabrication mask incudes combining circuitry pattern data biasing and wet undercut etching of light transmissive substrate material adjacent phase shift regions of the mask in fabricating the mask. In one implementation, a method of forming an alternating phase shift circuitry fabrication mask includes combining circuitry pattern data biasing and wet undercut etching of light transmissive substrate material adjacent phase shift regions of the mask effective to achieve a first data biased pattern when using the mask to fabricate circuitry of a desired circuit pattern on another substrate.

Abstract: There are provided methods of creating a phase shift mask, comprising storing a file representing a binary mask layout as one or more cells, or as a hierarchy of a plurality of cells, at least some of which cells contain printable shapes; for each cell, determining if the cell contains a printable shape; if the cell has a printable shape, determining if the cell will print desired features in a wafer fabrication process and if so, leaving the cell alone; if the cell has a printable shape which will not print desired features in the wafer fabrication process, providing phase shift areas adjacent the printable shape so that it will print desired features; and using the cells to produce a phase shift mask. There are further provided embodiments of steps for generating such phase shift areas. In addition, there are provided photolithographic processes comprising directing exposure onto a resist through a mask formed using such methods.

Abstract: There are provided methods of creating a phase shift mask, comprising storing a file representing a binary mask layout as one or more cells, or as a hierarchy of a plurality of cells, at least some of which cells contain printable shapes; for each cell, determining if the cell contains a printable shape; if the cell has a printable shape, determining if the cell will print desired features in a wafer fabrication process and if so, leaving the cell alone; if the cell has a printable shape which will not print desired features in the wafer fabrication process, providing phase shift areas adjacent the printable shape so that it will print desired features; and using the cells to produce a phase shift mask. There are further provided embodiments of steps for generating such phase shift areas. In addition, there are provided photolithographic processes comprising directing exposure onto a resist through a mask formed using such methods.

Abstract: There are provided methods of creating a phase shift mask, comprising storing a file representing a binary mask layout as one or more cells, or as a hierarchy of a plurality of cells, at least some of which cells contain printable shapes; for each cell, determining if the cell contains a printable shape; if the cell has a printable shape, determining if the cell will print desired features in a wafer fabrication process and if so, leaving the cell alone; if the cell has a printable shape which will not print desired features in the wafer fabrication process, providing phase shift areas adjacent the printable shape so that it will print desired features; and using the cells to produce a phase shift mask. There are further provided embodiments of steps for generating such phase shift areas. In addition, there are provided photolithographic processes comprising directing exposure onto a resist through a mask formed using such methods.