Patents by Inventor An-Hsuan Lee
An-Hsuan Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240162064Abstract: A die sorter tool may include a first conveyor, and a first lane to receive, from one or more load ports and via the first conveyor, a carrier with a set of dies. The die sorter tool may include a die flip module to receive the carrier from the first lane, manipulate one or more dies of the set of dies by changing orientations of the one or more dies, and return the one or more dies to the carrier after manipulating the one or more dies and without changing positions of the one or more dies within the carrier. The die sorter tool may include a second conveyor, and a second lane to receive, via the second conveyor, the carrier from the die flip module, and provide, via the first conveyor, the carrier to the one or more load ports.Type: ApplicationFiled: January 23, 2024Publication date: May 16, 2024Inventors: Chih-Hung HUANG, Cheng-Lung WU, Zheng-Lin HE, Yang-Ann CHU, Jiun-Rong PAI, Hsuan LEE
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Patent number: 11984166Abstract: A storage device for generating an identity code and an identity code generating method are disclosed. The storage device includes a first storage circuit, a second storage circuit and a reading circuit. The first storage circuit stores a plurality of first data and the first data have a plurality of bits. The second storage circuit stores a plurality of second data and the second data have a plurality of bits. The reading circuit reads the second data from the second storage circuit to form a first sequence, selects a first portion of the first data according to the first sequence, reads the first portion of the first data from the first storage circuit to form a target sequence and outputs the target sequence to serve as an identity code.Type: GrantFiled: July 29, 2021Date of Patent: May 14, 2024Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Yu-Hsuan Lin, Dai-Ying Lee, Ming-Hsiu Lee
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Patent number: 11984365Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.Type: GrantFiled: March 19, 2021Date of Patent: May 14, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pei-Hsuan Lee, Hung-Ming Chen, Kuang-Shing Chen, Yu-Hsiang Cheng, Xiaomeng Chen
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Patent number: 11982937Abstract: The invention discloses a reticle pod including a base and a lid mounted to the base. The base has a bottom surface having at least one first mark and at least one second mark. The first mark has a first reflectivity relative to a light source, and the second mark has a second reflectivity relative to the light source. The first reflectivity is different from the second reflectivity, and both are also different from that of the rest area of the bottom surface.Type: GrantFiled: January 12, 2021Date of Patent: May 14, 2024Assignee: GUDENG PRECISION INDUSTRIAL CO., LTD.Inventors: Chia-Ho Chuang, Hsing-Min Wen, Yi-Hsuan Lee, Hsin-Min Hsueh, Ming-Chien Chiu
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Publication number: 20240154447Abstract: A power system including a first battery pack, a second battery pack, and a power management circuit is disclosed. The first battery pack has a first end and a second end, and has a first battery capacity. The second battery pack has a third end and a fourth end. The third end is coupled to the second end of the first battery pack and provides a low battery voltage. The fourth end is grounded, the second battery pack has a second battery capacity, and the second battery capacity is greater than the first battery capacity. The power management circuit is coupled to the second battery pack to receive the low battery voltage, and provides a component operating voltage to an electronic components based on the low battery voltage.Type: ApplicationFiled: August 29, 2023Publication date: May 9, 2024Applicant: PEGATRON CORPORATIONInventors: Yi-Hsuan Lee, Liang-Cheng Kuo, Chun-Wei Ko, Ya Ju Cheng, Chih Wei Huang, Ywh Woei Yeh, Yu Cheng Lin, Yen Ting Wang
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Publication number: 20240145596Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.Type: ApplicationFiled: January 2, 2024Publication date: May 2, 2024Inventors: Su-Hao Liu, Kuo-Ju Chen, Kai-Hsuan Lee, I-Hsieh Wong, Cheng-Yu Yang, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Syun-Ming Jang, Meng-Han Chou
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Patent number: 11973260Abstract: A light-transmitting antenna includes a substrate, a first and a second conductive pattern. The first and the second conductive pattern is disposed on a first and a second surface of the substrate respectively. The first conductive pattern includes a first feeder unit, a first and a second radiation unit, a first and a second coupling unit and a first parasitic unit. The first feeder unit is connected to the second radiation unit. The first and the second radiation unit are located between the first and the second coupling unit. One side and the other side of the first parasitic unit is connected to the second coupling unit and adjacent to the first coupling unit respectively. The second conductive pattern includes a second feeder unit, a third coupling unit, a second parasitic unit, and a fourth coupling unit.Type: GrantFiled: November 9, 2022Date of Patent: April 30, 2024Assignee: Industrial Technology Research InstituteInventors: Ruo-Lan Chang, Mei-Ju Lee, Cheng-Hua Tsai, Meng-Hsuan Chen, Wei-Chung Chen
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Publication number: 20240137061Abstract: A radio frequency receiving circuit includes a first amplification circuit, an oscillation circuit, a frequency mixing and amplification circuit and a dividing circuit. The first amplification circuit is configured to amplify an input signal so as to generate an amplified input signal. The oscillation circuit is configured to provide a local oscillation signal. The frequency mixing and amplification circuit is configured to mix and amplify the amplified input signal according to the local oscillation signal. The dividing circuit is configured to form a dividing loop at a preset frequency for the amplified input signal according to the local oscillation signal when the dividing circuit is driven. A chip including the radio frequency receiving circuit and a main circuit is also provided. The main circuit is configured to drive the dividing circuit when the second input signal is determined to include a signal of the preset frequency.Type: ApplicationFiled: October 17, 2023Publication date: April 25, 2024Applicant: REALTEK SEMICONDUCTOR CORP.Inventors: Ruo-Hsuan GAO, Chia-Yi LEE, Chia-Jun CHANG
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Patent number: 11968838Abstract: A device includes a semiconductor substrate; a word line extending over the semiconductor substrate; a memory film extending along the word line, wherein the memory film contacts the word line; a channel layer extending along the memory film, wherein the memory film is between the channel layer and the word line; source lines extending along the memory film, wherein the memory film is between the source lines and the word line; bit lines extending along the memory film, wherein the memory film is between the bit lines and the word line; and isolation regions, wherein each isolation region is between a source line and a bit line, wherein each of the isolation regions includes an air gap and a seal extending over the air gap.Type: GrantFiled: August 30, 2021Date of Patent: April 23, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-Chen Wang, Kai-Hsuan Lee, Sai-Hooi Yeong, Chi On Chui
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Publication number: 20240129213Abstract: A link down detector and a link down detecting method for Ethernet are provided. The link down detecting method includes the following steps. Firstly, a received signal is received, and a high-frequency band signal is extracted from the received signal. Consequently, the high-frequency band signal is formed as an extraction signal. Then, a high-frequency band power value of the extraction signal is calculated, and a full band power value of the received signal is calculated. Then, a ratio value of the high-frequency band power value to the full band power value is calculated. In a link up status, if the ratio value is changed dramatically in a specified time, a link down signal is asserted to indicate that a network device connected to the Ethernet is switched to a link down status.Type: ApplicationFiled: May 11, 2023Publication date: April 18, 2024Inventors: Po-Hsuan LEE, I-Chuan CHIU, Shih-Yi SHIH
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Publication number: 20240120656Abstract: A light-transmitting antenna includes a substrate, a first conductive pattern, and a second conductive pattern. The first conductive pattern has a first feeder unit, a first radiation unit, a second radiation unit, and a first connection unit. The first feeder unit and the first connection unit are connected to two sides of the first radiation unit. The first connection unit connects the first radiation unit and the second radiation unit. The second conductive pattern has a second feeder unit, a third radiation unit, a fourth radiation unit, and a second connection unit. The second feeder unit and the second connection unit are connected to two sides of the third radiation unit. The second connection unit connects the third radiation unit and the fourth radiation unit. An orthogonal projection of the second feeder unit on a first surface of the substrate at least partially overlaps the first feeder unit.Type: ApplicationFiled: December 22, 2022Publication date: April 11, 2024Applicant: Industrial Technology Research InstituteInventors: Meng-Hsuan Chen, Cheng-Hua Tsai, Mei-Ju Lee, Ruo-Lan Chang, Wei-Chung Chen
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Publication number: 20240121927Abstract: A display device includes the following features. A display panel is disposed in a shell and has a display surface and a back surface. The display surface faces a light-passing portion of the shell, and a first heat dissipation space is formed between the display surface and the light-passing portion. An airflow-blocking plate is disposed in the shell, and a second heat dissipation space is formed among the airflow-blocking plate, the shell and the back surface. A third heat dissipation space is formed between the airflow-blocking plate and the shell. The first heat dissipation space, the second heat dissipation space, the third heat dissipation space, an air inlet and an air outlet of the shell are communicated with each other. A heat-generating assembly is disposed in the second heat dissipation space. A first fan is disposed at the air outlet.Type: ApplicationFiled: December 19, 2023Publication date: April 11, 2024Inventors: KUO HSUAN FAN, NAN-CHING LEE, Fa wei Lan
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Publication number: 20240112958Abstract: A method of forming a device includes providing a transistor having a gate structure and a source/drain structure adjacent to the gate structure. A cavity is formed along a sidewall surface of a contact opening over the source/drain structure. After forming the cavity, a sacrificial layer is deposited over a bottom surface and along the sidewall surface of the contact opening including within the cavity. A first portion of the sacrificial layer along the bottom surface of the contact opening is removed to expose a portion of the source/drain structure. A metal plug is then formed over the portion of the exposed source/drain structure. A remaining portion of the sacrificial layer is removed to form an air gap disposed between the metal plug and the gate structure. Thereafter, a seal layer is deposited over the air gap to form an air gap spacer.Type: ApplicationFiled: December 1, 2023Publication date: April 4, 2024Inventors: Sai-Hooi YEONG, Kai-Hsuan LEE
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Publication number: 20240113202Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.Type: ApplicationFiled: December 1, 2023Publication date: April 4, 2024Inventors: Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Kai-Hsuan Lee, Sai-Hooi Yeong, Tien-I Bao, Wei-Ken Lin
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Publication number: 20240112928Abstract: A trimming method is provided. The trimming method includes the following steps. A first wafer including a substrate and a device layer over a first side of the substrate is provided. The first wafer is bonded to a second wafer with the first side of the substrate facing toward the second wafer. An edge trimming process is performed to remove a trimmed portion of the substrate from a second side opposite to the first side vertically downward toward the first side in a first direction along a perimeter of the substrate, wherein the edge trimming process results in the substrate having a flange pattern laterally protruding from the device layer and laterally surrounding an untrimmed portion of the substrate along a second direction perpendicular to the first direction.Type: ApplicationFiled: January 10, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: An-Hsuan Lee, Chen-Hao Wu, Chun-Hung Liao, Huang-Lin Chao
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Patent number: 11944530Abstract: A vascular graft may be configured to transition from an insertion state to a deployed state. The graft comprising a proximal end having an expandable mesh, a distal end having an expandable mesh, and at least one suture cuff positioned between the proximal and distal ends, wherein each suture cuff comprises additional material relative to the proximal and distal ends that is configured to form when the vascular graft transitions from the insertion state to the deployed state.Type: GrantFiled: December 30, 2019Date of Patent: April 2, 2024Assignee: Aquedeon Medical, Inc.Inventors: Thomas J. Palermo, Pin-Hsuan Lee, Jimmy Jen
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Publication number: 20240106114Abstract: A radio device includes a first antenna array and an actuator. The first antenna array is configured to transmit a radiation beam to a remote device. The actuator is configured to change an orientation of the first antenna array, whereby a beam direction of the radiation beam is changed according to a change of the orientation of the first antenna array. The beam direction of the radiation beam is adjusted according to a beam steering mechanism performed by the first antenna array.Type: ApplicationFiled: September 26, 2022Publication date: March 28, 2024Inventors: Shih-Wei HSIEH, Wei-Hsuan CHANG, Chih-Wei LEE, Shyh-Tirng FANG
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Publication number: 20240102860Abstract: An apparatus includes a six-axis correction stage, an auto-collimation measurement device, a light splitter, a telecentric image measurement device, and a controller. The six-axis correction stage carries a device under test; the auto-collimation measurement device is arranged above the six-axis correction stage along a measurement optical axis; the light splitter is arranged on the measurement optical axis and is interposed between the six-axis correction stage and the auto-collimation measurement device. A method controls the six-axis correction stage to correct rotation errors in at least two degrees of freedom of the device under test according to a measurement result of the auto-collimation measurement device, and controls the six-axis correction stage to correct translation and yaw errors in at least three degrees of freedom of the device under test according to a measurement result of the telecentric image measurement device by means of the controller.Type: ApplicationFiled: September 5, 2023Publication date: March 28, 2024Inventors: Cheng Chih HSIEH, Tien Chi WU, Ming-Long LEE, Yu-Hsuan LIN, Tsung-I LIN, Chien-Hao MA
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Publication number: 20240098959Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.Type: ApplicationFiled: November 22, 2023Publication date: March 21, 2024Inventors: Kai-Hsuan Lee, Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Feng-Cheng Yang, Yen-Ming Chen
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Patent number: 11935890Abstract: In a method for forming an integrated semiconductor device, a first inter-layer dielectric (ILD) layer is formed over a semiconductor device that includes a first transistor structure, a two-dimensional (2D) material layer is formed over and in contact with the first ILD layer, the 2D material layer is patterned to form a channel layer of a second transistor structure, a source electrode and a drain electrode of the second transistor structure are formed over the patterned 2D material layer and laterally spaced apart from each other, a gate dielectric layer of the second transistor structure is formed over the patterned 2D material layer, the source electrode and the drain electrode, and a gate electrode of the second transistor structure is formed over the gate dielectric layer and laterally between the source electrode and the drain electrode.Type: GrantFiled: April 11, 2022Date of Patent: March 19, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Yi Peng, Chun-Chieh Lu, Meng-Hsuan Hsiao, Ling-Yen Yeh, Carlos H. Diaz, Tung-Ying Lee