Abstract: An integrated fan-out package includes a first redistribution structure, a die, conductive structures, an encapsulant, and a second redistribution structure. The first redistribution structure has first regions and a second region surrounding the first regions. A metal density in the first regions is smaller than a metal density in the second region. The die is disposed over the first redistribution structure. The conductive structures are disposed on the first redistribution structure to surround the die. Vertical projections of the conductive structures onto the first redistribution structure fall within the first regions of the first redistribution structure. The encapsulant encapsulates the die and the conductive structures. The second redistribution structure is disposed on the encapsulant, the die, and the conductive structures.

Abstract: A package structure including a semiconductor die, a redistribution layer structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution layer structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution layer structure includes a backside dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the backside dielectric layer and the inter-dielectric layers. The electronic device is disposed over the backside dielectric layer and electrically connected to an outermost redistribution conductive layer among the redistribution conductive layers, wherein the outermost redistribution conductive layer is embedded in the backside dielectric layer, and the backside dielectric layer comprises a ring-shaped recess covered by the outermost redistribution conductive layer.

Abstract: The present disclosure is directed to imaging LiDARs with separate transmit (Tx) and receive (Rx) optical antennas fed by different optical waveguides. This pair of optical antennas can be activated at the same time through a dual-channel optical switch network, with the Tx antenna connected to a laser source and the Rx antenna connected to a receiver. The Tx and Rx antennas can be positioned adjacent to each other, so they point to approximately the same far-field angle. No optical alignment between the Tx and Rx is necessary. This LiDAR configuration, referred to herein as pseudo-monostatic LiDAR, eliminates spurious reflections and increases the dynamic range of the LiDAR.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: A large-scale single-photonics-based optical switching system that occupies an area larger than the maximum area of a standard step-and-repeat lithography reticle is disclosed. The system includes a plurality of identical switch blocks, each of is formed in a different reticle field that no larger than the maximum reticle size. Bus waveguides of laterally adjacent switch blocks are stitched together at lateral interfaces that include a second arrangement of waveguide ports that is common to all lateral interfaces. Bus waveguides of vertically adjacent switch blocks are stitched together at vertical interfaces that include a first arrangement of waveguide ports that is common to all vertical interfaces. In some embodiments, the lateral and vertical interfaces include waveguide ports having waveguide coupling regions that are configured to mitigate optical loss due to stitching error.

Abstract: A semiconductor package includes an encapsulated semiconductor device, a backside redistribution structure, and a front side redistribution structure. The encapsulated semiconductor device includes an encapsulating material and a semiconductor device encapsulated by the encapsulating material. The backside redistribution structure is disposed on a backside of the encapsulated semiconductor device and includes a redistribution circuit layer and a first patterned dielectric layer. The redistribution circuit layer has a circuit pattern and a dummy pattern electrically insulated from the circuit pattern. The dummy pattern is overlapped with the semiconductor device from a top view of the semiconductor package. The first patterned dielectric layer is disposed on the redistribution circuit layer and includes a marking pattern disposed on the dummy pattern and revealing a part of the dummy pattern.

Abstract: Various embodiments include a system or platform that uses electrochemistry to upcycle waste products and low-value minerals into valuable, carbon dioxide (CO2)-neutral materials. Various embodiments may include systems and/or methods for processing material inputs using an electrochemical reactor. Various embodiments may include systems, methods, and/or devices for capturing and sequestering carbon dioxide (CO2) while producing valuable co-products.

Abstract: A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopants and a second dopant, and the second dopant comprises a group V material.

Abstract: An integrated circuit device includes a dielectric structure within a metal interconnect over a substrate. The dielectric structure includes a cavity. A first dielectric layer provides a roof for the cavity. A second dielectric layer provides a floor for the cavity. A material distinct from the first dielectric layer and the second dielectric layer provides a side edge for the cavity. In a central area of the cavity, the cavity has a constant height. The height may be selected to provide a low parasitic capacitance between features above and below the cavity. The roof of the cavity may be flat. A gate dielectric may be formed over the roof. The dielectric structure is particularly useful for reducing parasitic capacitances when employing back-end-of-line (BEOL) transistors.

Abstract: Reaction schemes involving acids and bases; reactors comprising spatially varying chemical composition gradients (e.g., spatially varying pH gradients), and associated systems and methods, are generally described.

Abstract: A non-human organism for upgrading intermediate oxidation products formed by catalytic degradation of alkanes or polystyrenes is provided. The non-human organism is genetically modified to convert the intermediate oxidation products to secondary metabolites, and in particular to include a positive feedback loop construction in the promotor system. A method includes steps of catalytically degrading alkanes or polystyrene in an oxidizing environment to form intermediate products with one or more catalysts and contacting the intermediate products with the non-human organism such that intermediate oxidation products are converted to secondary metabolites.

Abstract: Systems and methods of the various embodiments may provide a battery including a rolling diaphragm configured to move to accommodate an internal volume change of one or more components of the battery. Systems and methods of the various embodiments may provide a battery housing including a rolling diaphragm seal disposed between an interior volume of the battery and an electrode assembly within the battery. Various embodiments may provide an air electrode assembly including an air electrode supported on a buoyant platform such that the air electrode is above a surface of a volume of electrolyte when the buoyant platform is floating in the electrolyte.

Abstract: According to one aspect, an electrochemical cell may include a positive electrode, a negative electrode, and an electrolyte separating the positive electrode and the negative electrode from one another. The positive electrode, the negative electrode, and the electrolyte may collectively store and discharge energy by an electrode reaction of chlorine dioxide (ClO2).

Abstract: Support structures are used in certain additive fabrication processes to permit fabrication of a greater range of object geometries. For additive fabrication processes with materials that are subsequently sintered into a final part, an interface layer is formed between the object and support in order to inhibit bonding between adjacent surfaces of the support structure and the object during sintering.

Abstract: An electrochemical cell and battery system including cells, each cell including a catholyte, an anolyte, and a separator disposed between the catholyte and anolyte and that is permeable to the at least one ionic species (for example, a metal cation or the hydroxide ion). The catholyte solution includes a ferricyanide, permanganate, manganate, sulfur, and/or polysulfide compound, and the anolyte includes a sulfide and/or polysulfide compound. These electrochemical couples may be embodied in various physical architectures, including static (non-flowing) architectures or in flow battery (flowing) architectures.

Abstract: Reaction schemes involving acids and bases; reactors comprising spatially varying chemical composition gradients (e.g., spatially varying pH gradients), and associated systems and methods, are generally described.

Abstract: Chemical reaction devices involving acid and/or base, and related systems and methods, are generally described.