Abstract: Semiconductor devices and methods of manufacture are discussed. In an embodiment, a method of manufacturing a semiconductor device includes: forming first nanostructures from a first material over a substrate; forming second nanostructures from a second material different from the first material over the substrate, wherein the first nanostructures and the second nanostructures alternate vertically above the substrate; removing the first nanostructures; after the removing the first nanostructures forming an interposer in between the second nanostructures; after the forming the interposer forming a first source/drain region over the substrate and in direct physical contact with the second nanostructures; and removing the interposer exposing surfaces of each of the second nanostructures.

Abstract: A semiconductor device includes a stacked gate structure, a plurality of stacks and a first conductive layer. The stacks are disposed aside the stacked gate structure and arranged along both a first direction and a second direction perpendicular to the first direction, wherein the stacks are extended continuously along the first direction and segmented in the second direction. The first conductive layer is disposed between segmented portions of the stacks along the second direction, wherein top surfaces of the segmented portions of the stacks are higher than a top surface of the first conductive layer.

Abstract: Disclosed is a responsive platform, which includes a polymer-grafted nanopillar array, cargo-containing entities, first conjugatable moieties, and second conjugatable moieties. The polymer-grafted nanopillar array includes thermoresponsive polymer brushes grafted onto surfaces of nanopillars, and the cargo-containing entities are attached to the thermoresponsive polymer brushes through non-covalent association between the first conjugatable moieties and the second conjugatable moieties. Accordingly, the cargo-containing entities can be released from the nanopillar array for cellular uptake in a controlled manner by applying thermal stimulus.

Abstract: A metal electrode of a ceramic capacitor and a method of forming the same are provided. The method includes mixing metal powders and a barium titanate organic-precursor to obtain precursor powders; adding an adhesive to the precursor powders to obtain a metal slurry; performing a molding process to the metal slurry to obtain a film material; performing a binder burn-out process to the film material to obtain a degumming film; and performing a sintering process to the degumming film to obtain the metal electrode. By mixing specific amount of barium titanate organic-precursor with the metal powders, the barium titanate metallic organic-precursor can be transformed to barium titanate in the following process, and barium titanate can be dispersed between the metals homogeneously. Therefore, electrode continuity can be increased.

Abstract: A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

Abstract: An embodiment method includes: forming fins extending from a semiconductor substrate; depositing an inter-layer dielectric (ILD) layer on the fins; forming masking layers on the ILD layer; forming a cut mask on the masking layers, the cut mask including a first dielectric material, the cut mask having first openings exposing the masking layers, each of the first openings surrounded on all sides by the first dielectric material; forming a line mask on the cut mask and in the first openings, the line mask having slot openings, the slot openings exposing portions of the cut mask and portions of the masking layers, the slot openings being strips extending perpendicular to the fins; patterning the masking layers by etching the portions of the masking layers exposed by the first openings and the slot openings; and etching contact openings in the ILD layer using the patterned masking layers as an etching mask.

Abstract: A remote control system for gas detection and purification is disclosed and includes a remote control device, a gas detection module and a gas purification device. The remote control device includes a gas inlet and a gas outlet. The gas detection module is disposed in the remote control device and in communication with the gas outlet to detect the gas located in an indoor space. The gas detection module provides and outputs a gas detection datum, and the remote control device transmits an operation command via wireless transmission. The gas purification device is disposed in the indoor space and receives the operating instruction transmitted from the remote control device to be operated. When the gas purification device is under the activated state, the gas in the indoor space is purified, and the purification operation mode of the gas purification device is adjusted according to the first gas detection datum.

Abstract: In an embodiment, a package includes an integrated circuit device attached to a substrate; an encapsulant disposed over the substrate and laterally around the integrated circuit device, wherein a top surface of the encapsulant is coplanar with the top surface of the integrated circuit device; and a heat dissipation structure disposed over the integrated circuit device and the encapsulant, wherein the heat dissipation structure includes a spreading layer disposed over the encapsulant and the integrated circuit device, wherein the spreading layer includes a plurality of islands, wherein at least a portion of the islands are arranged as lines extending in a first direction in a plan view; a plurality of pillars disposed over the islands of the spreading layer; and nanostructures disposed over the pillars.

Abstract: A method to obtain a cache miss ratio curve where a memory blocks of a cache have variable block sizes. By stacking sets of counters, each set being for a different block size, a stack distance for variable block sizes can be obtained and used to determine a miss ratio curve. Such curve can then be used to select a cache size that is appropriate for an application without requiring excessive memory. Methods can be used for batches of request, can apply limits to block sizes, and rounding for intermediary block sizes, they can be used with pruning, and their space complexity can be held constant.

Abstract: An audio and visual equipment and a method are provided. The audio and visual equipment includes a terminal device including a display. A user interface is displayed by the display. The user interface selectively displays one of a background selection page for selecting a background image, a stack layout selection page for selecting a layout pattern, a presentation selection page for selecting a presentation image, and an object rotation control page for controlling a position of an augmented reality object image. The terminal device provides a control signal according to a selection of the user interface. The terminal device receives a composite image associated with the selection of the user interface. The composite image is displayed by the display. The composite image includes at least one predetermined stacking sequence formed by a person image, the background image, and the at least one of the augmented reality object image and the presentation image.

Abstract: A method includes forming a dielectric layer over a substrate, the dielectric layer having a top surface; etching an opening in the dielectric layer; forming a bottom electrode within the opening, the bottom electrode including a barrier layer; forming a phase-change material (PCM) layer within the opening and on the bottom electrode, wherein a top surface of the PCM layer is level with or below the top surface of the dielectric layer; and forming a top electrode on the PCM layer.

Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Abstract: A semiconductor structure includes a first device and a second device. The first device includes: a first gate structure formed over an active region and a first air spacer disposed adjacent to the first gate structure. The second device includes: a second gate structure formed over an isolation structure and a second air spacer disposed adjacent to the second gate structure. The first air spacer and the second air spacer have different sizes.

Abstract: An electronic device includes a first part and a second part that can be folded or expanded relative to each other. The electronic device has a closed state and an open state When the electronic device is in the closed state, a frame of the first part and a frame of the second part partially or totally overlap. The first part includes a first feeding antenna. The second part includes a first parasitic antenna, and when the electronic device is in the closed state, the first parasitic antenna is not grounded and can be coupled to the first feeding antenna.

Abstract: For a given application, increasing the size of a cache is beneficial up to a certain point and the number of hits does not increase significantly with a greater cache size. This disclosure provides a method to determine a miss ratio curve, for a cache having data blocks with a time-to-live. A hashed value of a data block's key address can be used to generate a 2D HLL counter for storing expiry times of the data blocks. The 2D HLL counter can be converted to a 1D array, from which a stack distance can be calculated. A frequency distribution of stack distances can then be converted into a miss ratio curve, from which an appropriate cache size can be selected.

Abstract: A violation checking method includes generating a violation log report for a design, classifying violation logs in the violation log report into high-risk logs and low-risk logs by a machine learning model, reviewing the high-risk logs, and modifying the design if at least one bug is identified in the high-risk logs.

Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.