Abstract: Processes for preparing color stable red-emitting phosphors include contacting a complex fluoride phosphor of formula I with a first fluorine-containing oxidizing agent in gaseous form at a first temperature ranging from 200° C. to 700° C. to form a first product phosphor, contacting the first product phosphor in particulate form with a solution of a compound of formula II in aqueous hydrofluoric acid to form a treated phosphor, and contacting the treated phosphor with a second fluorine-containing oxidizing agent in gaseous form at a second temperature <225° C., AxMFy:MN4+??I AxMFy??II wherein A is independently at each occurrence Li, Na, K, Rb, Cs or a combination thereof, M is independently at each occurrence Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof, x is absolute value of the charge of the MFy ion; and y is 5, 6 or 7.

Abstract: Synthesizing a color stable Mn4+ doped phosphor by contacting a gaseous fluorine-containing oxidizing agent with a precursor of: AaBbCcDdXx:Mn4+; AaiBbiCciDdXxYd:Mn4+; A13G2?m?nMnmMgnLi3F12Op; or AZF4:Mn4+. Where A is Li, Na, K, Rb, Cs, or a combination; B is Be, Mg, Ca, Sr, Ba, or a combination; C is Sc, Y, B, Al, Ga, In, Tl, or a combination; D is Ti, Zr, Hf, Rf, Si, Ge, Sn, Pb, or a combination; X is F or a combination of F and one of Br, Cl, and I; Y is O, or a combination of O and one of S and Se; A1 is Na or K, or a combination; G is Al, B, Sc, Fe, Cr, Ti, In, or a combination; Z is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Y, In, or a combination.

Abstract: A process for treating a luminescent halogen-containing material includes contacting the luminescent halogen-containing material with an atmosphere comprising a halogen-containing oxidizing agent for a period of at least about two hours. The luminescent halogen-containing material has a composition other than (i) Ax[MFy]:Mn4+, where A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7; (ii) Zn2[MF7]:Mn4+, where M is selected from Al, Ga, In, and combinations thereof; (iii) E[MF6]:Mn4+, where E is selected from Mg, Ca, Sr, Ba, Zn, and combinations thereof; and where M is selected from Ge, Si, Sn, Ti, Zr, and combinations thereof; or (iv) Ba0.65Zr0.35F2.

Abstract: A method of monitoring a surface temperature of a hot gas path component includes directing an excitation beam having an excitation wavelength at a layer of a sensor material composition deposited on a hot gas path component to induce a fluorescent radiation. The method includes measuring fluorescent radiation emitted by the sensor material composition. The fluorescent radiation includes at least a first intensity at a first wavelength and a second intensity at a second wavelength. The surface temperature of the hot gas path component is determined based on a ratio of the first intensity at the first wavelength and the second intensity at the second wavelength of the fluorescent radiation emitted by the sensor material composition.

Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0?i; 0?j; 0?k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Abstract: A process for fabricating a LED lighting apparatus includes disposing a composite coating on a surface of a LED chip. The composite coating comprises a first composite layer having a manganese doped phosphor of formula I and a first binder, and a second composite layer comprising a second phosphor composition and a second binder. The first binder, the second binder or both include a poly(meth)acrylate. Ax[MFy]:Mn4+??(I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0?i; 0?j; 0?k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Abstract: Processes for preparing color stable Mn4+ doped phosphors include contacting a phosphor of formula I with a fluorine-containing oxidizing agent in gaseous form at temperature ?225° C. to form the color stable Mn4+ doped phosphor A x ? MF y ? : ? Mn 4 + I wherein A is independently at each occurrence Li, Na, K, Rb, Cs, or a combination thereof; M is independently at each occurrence Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the MFy ion; and y is 5, 6 or 7. In another aspect, the processes include contacting a phosphor of formula I at an elevated temperature with an oxidizing agent comprising a C1-C4 fluorocarbon, to form the color stable Mn4+ doped phosphor.

Abstract: Processes for preparing color stable red-emitting phosphors include contacting a complex fluoride phosphor of formula I, AxMFy:Mn4+?? I with a first fluorine-containing oxidizing agent in gaseous form at a first temperature ranging from about 200° C. to about 700° C., to form a first product phosphor; contacting the first product phosphor in particulate form with a solution of a compound of formula II in aqueous hydrofluoric acid, AxMFy?? II to form a treated phosphor; and contacting the treated phosphor with a second fluorine-containing oxidizing agent in gaseous form at a second temperature of less than 225° C.; wherein A is independently at each occurrence Li, Na, K, Rb, Cs, or a combination thereof; M is independently at each occurrence Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the MFy ion; and y is 5, 6 or 7.

Abstract: A process for synthesizing a color stable Mn4+ doped phosphor includes contacting a precursor of formula I, in gaseous form at an elevated temperature with a fluorine-containing oxidizing agent to form the color stable Mn4+ doped phosphor Ax[MFy]:Mn4+??I wherein A is Li, Na, K, Rb, Cs, NR4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of 1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A phosphor material is presented that includes a blend of a first phosphor, a second phosphor and a third phosphor. The first phosphor includes a composition having a general formula of RE2?yM1+yA2?yScySin?wGewO12+?:Ce3+ wherein RE is selected from a lanthanide ion or Y3+, where M is selected from Mg, Ca, Sr or Ba, A is selected from Mg or Zn and where 0?y?2, 2.5?n?3.5, 0?w?1, and ?1.5???1.5. The second phosphor includes a complex fluoride doped with manganese (Mn4+), and the third phosphor include a phosphor composition having an emission peak in a range from about 520 nanometers to about 680 nanometers. A lighting apparatus including such a phosphor material is also presented. The light apparatus includes a light source in addition to the phosphor material.

Abstract: A color stable Mn4+ doped phosphor of formula I, Ax[MFy]:Mn4+??I wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein % intensity loss of the phosphor after exposure to light flux of at least 80 w/cm2 at a temperature of at least 50° C. for at least 21 hours is ?4%.

Abstract: A process for synthesizing a manganese (Mn4+) doped phosphor includes milling particles of the a phosphor precursor of formula I, and contacting the milled particles with a fluorine-containing oxidizing agent at an elevated temperature Ax[MFy]:Mn4+??(I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract: A process for preparing a Mn4+ doped phosphor of formula I Ax[MFy]:Mn+4??I includes contacting a mixture of a compound of formula Ax[MFy], a compound of formula AX, and a Mn+n source comprising a fluoromanganese compound, with a fluorine-containing oxidizing agent in gaseous form, at an elevated temperature, to form the Mn4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; X is F, Cl, Br, I, HF2, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and n is 2, 3, or 4.

Abstract: A phosphor composition is derived from combining K2SiF6:Mn4+ in solid form with a saturated solution of a manganese-free complex fluoride including a composition of formula I:A3[MF6], where A is selected from Na, K, Rb, and combinations thereof and M is selected from Al, Ga, In, Sc, Y, Gd, and combinations thereof. The composition of formula I:A3[MF6] has a water solubility lower than a water solubility of K2SiF6. A lighting apparatus including the phosphor composition is also provided.

Abstract: A process for preparing a Mn4+ doped phosphor of formula I Ax[MFy]:Mn+4?? I includes combining in an acidic solution, an A+ cation, an anion of formula MFy, and a Mnn+ source comprising a fluoromanganese compound, precipitating a Mnn+ containing phosphor precursor from the acidic solution, and contacting the Mnn+ containing phosphor precursor with a fluorine-containing oxidizing agent in gaseous form, at an elevated temperature, to form the Mn4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and n is 2 or 3.

Abstract: Processes for preparing color stable Mn4+ doped phosphors include contacting a phosphor of formula I with a fluorine-containing oxidizing agent in gaseous form at temperature ?225° C. to form the color stable Mn4+ doped phosphor A x ? MF y ? : ? Mn 4 + I wherein A is independently at each occurrence Li, Na, K, Rb, Cs, or a combination thereof; M is independently at each occurrence Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the MFy ion; and y is 5, 6 or 7. In another aspect, the processes include contacting a phosphor of formula I at an elevated temperature with an oxidizing agent comprising a C1-C4 fluorocarbon, to form the color stable Mn4+ doped phosphor.

Abstract: A method of monitoring a surface temperature of an environmental barrier coating (EBC) of a hot gas component includes directing an excitation beam having a first wavelength at a layer of a temperature indicator formed on the hot gas component. The method also includes measuring a fluorescent radiation emitted by the temperature indicator. The fluorescent radiation has a second wavelength and an intensity. In addition, the method includes determining a surface temperature of the EBC based on the intensity of the second wavelength of the fluorescent radiation.

Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, Ax(M1?z,Mnz)Fy??I at an elevated temperature with a fluorine-containing oxidizing agent in gaseous form to form the Mn4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and 0.03?z?0.10.