Patents by Inventor Anatoly Fabrikant
Anatoly Fabrikant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150066466Abstract: Deconvolution systems and methods based on cornea smoothing can be used to obtain an ablation target or treatment shape that does not induce significant high order aberrations such as spherical aberration. Exemplary ablation targets or treatment shapes can provide a post-operative spherical aberration that is equal to or below a naturally occurring amount of spherical aberration.Type: ApplicationFiled: October 24, 2014Publication date: March 5, 2015Inventors: Dimitri Chernyak, Guang-Ming Dai, Anatoly Fabrikant
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Publication number: 20140163535Abstract: Embodiments of the present invention encompass systems and methods for customized vision treatments that account for effects associated with corneal flap creation.Type: ApplicationFiled: December 5, 2013Publication date: June 12, 2014Applicant: AMO Development, LLCInventors: Guang-ming Dai, Anatoly Fabrikant, Stanley S. Bentow
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Publication number: 20140135748Abstract: Systems, methods, and computer program products are provided for the administration of ablation profiles during refractive surgery treatments. Basis data framework techniques enable the implementation of ablation profiles having various shapes, resulting in increased ablation efficiency when treating certain vision conditions. Exemplary basis data architecture approaches are configured to efficiently operate with annular, elliptical, and slit laser beam shapes, for example, and to account for position-dependent ablation features.Type: ApplicationFiled: November 6, 2013Publication date: May 15, 2014Applicant: AMO Development, LLCInventors: Guang-ming Dai, Anatoly Fabrikant, Benjamin Logan, Dimitri Chernyak, Mark Arnoldussen
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Publication number: 20140095137Abstract: Deconvolution systems and methods based on cornea smoothing can be used to obtain an ablation target or treatment shape that does not induce significant high-order aberrations such as spherical aberration. Exemplary ablation targets or treatment shapes can provide a post-operative spherical aberration that is equal to or below a naturally occurring amount of spherical aberration.Type: ApplicationFiled: October 2, 2013Publication date: April 3, 2014Applicant: AMO Development, LLCInventors: Guang-ming Dai, Anatoly Fabrikant, Dimitri Chernyak
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Publication number: 20130190736Abstract: Optical correction methods, devices, and systems reduce optical aberrations or inhibit refractive surgery induced aberrations. Error source control and adjustment or optimization of ablation profiles or other optical data address high order aberrations. A simulation approach identifies and characterizes system factors that can contribute to, or that can be adjusted to inhibit, optical aberrations. Modeling effects of system components facilitates adjustment of the system parameters.Type: ApplicationFiled: July 20, 2012Publication date: July 25, 2013Applicant: AMO Manufacturing USA, LLCInventors: Anatoly Fabrikant, Guang-ming Dai, Dimitri Chernyak, Ben Logan, David Hindi, Qi Wang
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Publication number: 20130023863Abstract: Embodiments of the present invention provide methods and systems for determining an ablation treatment for an eye of a patient. The systems and method may involve determining an ellipsoid shape corresponding to an anterior corneal surface of the patient's eye. The ellipsoid shape may include an anterior portion, a major axis, and an apex, where the major axis intersects the anterior portion at the apex. The systems and method may also involve determining a tilted orientation of the eye, such as when the patient fixates on a target during a laser ablation procedure. The systems and method may further involve determining the ablation treatment based on the ellipsoid shape and/or the tilted orientation.Type: ApplicationFiled: July 21, 2011Publication date: January 24, 2013Applicant: AMO Development, LLCInventors: Dimitri Chernyak, Anatoly Fabrikant
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Patent number: 7933016Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a ?1st diffraction order and a +1st diffraction order.Type: GrantFiled: December 18, 2009Date of Patent: April 26, 2011Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanevsky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher F. Bevis, John Fielden, Noah Bareket, Kenneth P. Gross, Piotr Zalicki, Dan Wack, Paola Dececco, Thaddeus G. Dziura, Mark Ghinovker
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Patent number: 7876440Abstract: Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions; the target C is designed to have an offset Xc between its first and second structures portions; and the target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is different from zero, and Xa is an opposite sign and differ from Xb.Type: GrantFiled: July 17, 2009Date of Patent: January 25, 2011Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Anatoly Fabrikant
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Patent number: 7826071Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.Type: GrantFiled: October 8, 2007Date of Patent: November 2, 2010Assignee: KLA-Tencor CorporationInventors: Andrei V. Shchegrov, Anatoly Fabrikant, Mehrdad Nikoonahad, Ady Levy, Daniel C. Wack, Noah Bareket, Walter Mieher, Ted Dziura
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Patent number: 7821654Abstract: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab.Type: GrantFiled: March 24, 2009Date of Patent: October 26, 2010Assignee: KLA-Tencor CorporationInventors: Anatoly Fabrikant, Guoheng Zhao, Daniel C. Wack, Mehrdad Nikoonahad
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Publication number: 20100091284Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a ?1st diffraction order and a +1st diffraction order.Type: ApplicationFiled: December 18, 2009Publication date: April 15, 2010Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Walter D. Mieher, Ady Levy, Boris Golovanevsky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher F. Bevis, John Fielden, Noah Bareket, Kenneth P. Gross, Piotr Zalicki, Dan Wack, Paola Dececco, Thaddeus G. Dziura, Mark Ghinovker
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Patent number: 7663753Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb; target C is designed to have an offset Xc; and target D is designed to have an offset Xd. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.Type: GrantFiled: December 21, 2007Date of Patent: February 16, 2010Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanevsky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher F. Bevis, John Fielden, Noah Bareket, Ken Gross, Piotr Zalicki, Dan Wack, Paola Dececco, Thaddeus G. Dziura, Mark Ghinovker
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Publication number: 20090284744Abstract: Disclosed are apparatus and methods for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample. Targets A, B, C and D that each include a portion of the first and second structures are provided. The target A is designed to have an offset Xa between its first and second structures portions; the target B is designed to have an offset Xb between its first and second structures portions; the target C is designed to have an offset Xc between its first and second structures portions; and the target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is different from zero, and Xa is an opposite sign and differ from Xb. Offset Xc is an opposite sign and differs from Xd. The offsets Xa, Xb, Xc and Xd are selected so that an overlay error, including the respective offset, is within a linear region of overlay values.Type: ApplicationFiled: July 17, 2009Publication date: November 19, 2009Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Anatoly Fabrikant
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Publication number: 20090195779Abstract: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab.Type: ApplicationFiled: March 24, 2009Publication date: August 6, 2009Inventors: Anatoly Fabrikant, Guoheng Zhao, Daniel C. Wack, Mehrdad Nikoonahad
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Patent number: 7564557Abstract: Disclosed is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, the scatterometry overlay target cooperating with the scatterometry CD or profile target to form a scatterometry mark capable of being measured to determine overlay.Type: GrantFiled: October 29, 2007Date of Patent: July 21, 2009Assignee: KLA-Tencor Technologies Corp.Inventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Anatoly Fabrikant
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Publication number: 20090135416Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters.Type: ApplicationFiled: October 8, 2007Publication date: May 28, 2009Applicant: KLA-Tencor Technologies CorporationInventors: Andrei V. Shchegrov, Anatoly Fabrikant, Mehrdad Nikoonahad, Ady Levy, Daniel C. Wack, Noah Bareket, Walter Mieher, Ted Dziura
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Patent number: 7433040Abstract: Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.Type: GrantFiled: July 30, 2007Date of Patent: October 7, 2008Assignee: KLA-Tencor Technologies Corp.Inventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Anatoly Fabrikant, Christopher F. Bevis, Mark Ghinovker
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Patent number: 7385699Abstract: Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure a plurality of measured optical signals from a plurality of periodic targets on the sample. The targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures. A scatterometry overlay technique is then used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets.Type: GrantFiled: February 23, 2004Date of Patent: June 10, 2008Assignee: KLA-Tencor Technologies CorporationInventors: Walter D. Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael E. Adel, Anatoly Fabrikant, Christopher F. Bevis, Mark Ghinovker
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Publication number: 20080094630Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd.Type: ApplicationFiled: December 21, 2007Publication date: April 24, 2008Applicant: KLA-Tencor Technologies CorporationInventors: Walter Mieher, Ady Levy, Boris Golovanesky, Michael Friedmann, Ian Smith, Michael Adel, Anatoly Fabrikant, Christopher Bevis, John Fielden, Noah Bareket, Kenneth Gross, Piotr Zalicki, Dan Wack, Paola Dececco, Thaddeus Dziura, Mark Ghinovker
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Publication number: 20080084567Abstract: Instead of constructing a full multi-dimensional look-up-table as a model to find the critical dimension or other parameters in scatterometry, regression or other optimized estimation methods are employed starting from a “best guess” value of the parameter. Eigenvalues of models that are precalculated may be stored and reused later for other structures having certain common characteristics to save time. The scatterometric data that is used to find the value of the one or more parameter can be limited to those at wavelengths that are less sensitive to the underlying film characteristics. A model for a three-dimensional grating may be constructed by slicing a representative structure into a stack of slabs and creating an array of rectangular blocks to approximate each slab. One dimensional boundary problems may be solved for each block which are then matched to find a two-dimensional solution for the slab.Type: ApplicationFiled: November 27, 2007Publication date: April 10, 2008Inventors: Anatoly Fabrikant, Guoheng Zhao, Daniel Wack, Mehrdad Nikoonahad