Abstract: In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided.

Abstract: Non-metallic deposits are selectively removed from aluminum containing substrates such as aluminum faceplates using a selective deposition removal (SDR) solution. The SDR solution does not substantially etch the faceplate holes, thereby preserving the hole diameter integrity and increasing the number of times the faceplate may be cleaned or refurbished while remaining within processing hole diameter tolerances. In an embodiment, the SDR solution comprises, in wt % of the solution, 15.5%+/?2% HF or buffered HF acid, 3.8%+/?0.5% NH4F pH buffer, 59.7%+/?5% ethylene glycol, and the balance H2O.

Abstract: In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided.

Abstract: Non-metallic deposits are selectively removed from aluminum containing substrates such as aluminum faceplates using a selective deposition removal (SDR) solution. The SDR solution does not substantially etch the faceplate holes, thereby preserving the hole diameter integrity and increasing the number of times the faceplate may be cleaned or refurbished while remaining within processing hole diameter tolerances. In an embodiment, the SDR solution comprises, in wt % of the solution, 15.5%+/?2% HF or buffered HF acid, 3.8%+/?0.5% NH4F pH buffer, 59.7%+/?5% ethylene glycol, and the balance H2O.

Abstract: A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.

Abstract: A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.

Abstract: A method of cleaning process residues formed on surfaces in a chamber during processing of a substrate in the chamber includes first and second steps. In a first cleaning step, a first energized cleaning gas having a first chlorine-containing gas and oxygen is provided in the chamber and then exhausted. In a second cleaning step, a second energized cleaning gas having a second chlorine-containing gas and oxygen is provided in the chamber and then exhausted.

Abstract: A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.

Abstract: A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.