Patents by Inventor Anchel Sheyner
Anchel Sheyner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10770328Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.Type: GrantFiled: September 5, 2018Date of Patent: September 8, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Xing Lin, Douglas A. Buchberger, Jr., Xiaoping Zhou, Andrew Nguyen, Anchel Sheyner
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Publication number: 20190051551Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.Type: ApplicationFiled: September 5, 2018Publication date: February 14, 2019Inventors: XING LIN, DOUGLAS A. BUCHBERGER, JR., XIAOPING ZHOU, ANDREW NGUYEN, ANCHEL SHEYNER
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Patent number: 10096494Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.Type: GrantFiled: August 31, 2015Date of Patent: October 9, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Xing Lin, Douglas A. Buchberger, Xiaoping Zhou, Andrew Nguyen, Anchel Sheyner
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Publication number: 20150371877Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.Type: ApplicationFiled: August 31, 2015Publication date: December 24, 2015Applicant: APPLIED MATERIALS, INC.Inventors: XING LIN, DOUGLAS A. BUCHBERGER, JR., XIAOPING ZHOU, ANDREW NGUYEN, ANCHEL SHEYNER
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Patent number: 9123762Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.Type: GrantFiled: October 22, 2010Date of Patent: September 1, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Xing Lin, Douglas A. Buchberger, Jr., Xiaoping Zhou, Andrew Nguyen, Anchel Sheyner
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Patent number: 8633423Abstract: Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.Type: GrantFiled: April 29, 2011Date of Patent: January 21, 2014Assignee: Applied Materials, Inc.Inventors: Xing Lin, Douglas A. Buchberger, Jr., Xiaoping Zhou, Valentin Todorow, Andrew Nguyen, Anchel Sheyner
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Patent number: 8360003Abstract: In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.Type: GrantFiled: July 13, 2009Date of Patent: January 29, 2013Assignee: Applied Materials, Inc.Inventors: Andrew Nguyen, Hiroji Hanawa, Kartik Ramaswamy, Samer Banna, Anchel Sheyner, Valentin N. Todorow
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Patent number: 8329593Abstract: Polymer is removed from the backside of a wafer held on a support pedestal in a reactor using an arcuate side gas injection nozzle extending through the reactor side wall with a curvature matched to the wafer edge and supplied with plasma by-products from a remote plasma source.Type: GrantFiled: December 12, 2007Date of Patent: December 11, 2012Assignee: Applied Materials, Inc.Inventors: Imad Yousif, Anchel Sheyner, Ajit Balakrishna, Nancy Fung, Ying Rui, Martin Jeffrey Salinas, Walter R. Merry, Shahid Rauf
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Publication number: 20120097332Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.Type: ApplicationFiled: October 22, 2010Publication date: April 26, 2012Applicant: APPLIED MATERIALS, INC.Inventors: XING LIN, DOUGLAS A. BUCHBERGER, JR., XIAOPING ZHOU, ANDREW NGUYEN, ANCHEL SHEYNER
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Publication number: 20120091108Abstract: Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.Type: ApplicationFiled: April 29, 2011Publication date: April 19, 2012Applicant: APPLIED MATERIALS, INC.Inventors: XING LIN, DOUGLAS A. BUCHBERGER, Jr., XIAOPING ZHOU, VALENTIN TODOROW, ANDREW NGUYEN, ANCHEL SHEYNER
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Publication number: 20110265951Abstract: Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.Type: ApplicationFiled: October 20, 2010Publication date: November 3, 2011Applicant: APPLIED MATERIALS, INC.Inventors: MING XU, ANDREW NGUYEN, EVANS LEE, JARED AHMAD LEE, JAMES P. CRUSE, CORIE LYNN COBB, MARTIN JEFF SALINAS, ANCHEL SHEYNER, EZRA ROBERT GOLD, JOHN W. LANE
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Publication number: 20110269314Abstract: Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate.Type: ApplicationFiled: October 14, 2010Publication date: November 3, 2011Applicant: APPLIED MATERIALS, INC.Inventors: JARED AHMAD LEE, JAMES P. CRUSE, ANDREW NGUYEN, CORIE LYNN COBB, MING XU, MARTIN JEFF SALINAS, ANCHEL SHEYNER
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Publication number: 20110120505Abstract: Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.Type: ApplicationFiled: January 31, 2011Publication date: May 26, 2011Applicant: APPLIED MATERIALS, INC.Inventors: IMAD YOUSIF, Ying Rui, Nancy Fung, Martin Jeffrey Salinas, Ajit Balakrishna, Anchel Sheyner, Shahid Rauf, Walter R. Merry
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Patent number: 7879183Abstract: Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.Type: GrantFiled: February 27, 2008Date of Patent: February 1, 2011Assignee: Applied Materials, Inc.Inventors: Imad Yousif, Ying Rui, Nancy Fung, Martin Jeffrey Salinas, Ajit Balakrishna, Anchel Sheyner, Shahid Rauf, Walter R. Merry
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Publication number: 20110005685Abstract: In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: Applied Materials, Inc.Inventors: Andrew Nguyen, Hiroji Hanawa, Kartik Ramaswamy, Samer Banna, Anchel Sheyner, Valentin N. Todorow
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Publication number: 20090293907Abstract: Methods for cleaning a substrate are provided. In one embodiment, the method includes depositing a polymer on a substrate. A cleaning gas is provided to clean a frontside, a bevel edge, and a backside of the substrate. The cleaning gas may include various reactive chemicals such as H2 and N2 in one embodiment. In another embodiment, the cleaning gas may include H2 and H2O. Plasma is initiated from the cleaning gas and used to remove polymer that formed on a bevel edge, backside, or frontside of the substrate during semiconductor processing.Type: ApplicationFiled: October 6, 2008Publication date: December 3, 2009Inventors: Nancy Fung, Siyi Li, Ying Rui, Walter R. Merry, Anchel Sheyner, Kathryn Keswick, Shing-Li Sung, Mang-Mang Ling, Chia-Ling Kao, Wei-Te Wu, Kang-Lie Chiang
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Publication number: 20090214798Abstract: Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.Type: ApplicationFiled: February 27, 2008Publication date: August 27, 2009Inventors: IMAD YOUSIF, Ying Rui, Nancy Fung, Martin Jeffrey Salinas, Ajit Balakrishna, Anchel Sheyner, Shahid Rauf, Walter R. Merry
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Publication number: 20090156013Abstract: Polymer is removed from the backside of a wafer held on a support pedestal in a reactor using an arcuate side gas injection nozzle extending through the reactor side wall with a curvature matched to the wafer edge and supplied with plasma by-products from a remote plasma source.Type: ApplicationFiled: December 12, 2007Publication date: June 18, 2009Inventors: Imad Yousif, Anchel Sheyner, Ajit Balakrishna, Nancy Fung, Ying Rui, Martin Jeffrey Salinas, Walter R. Merry, Shahid Rauf