Patents by Inventor Andinet Tefera Desalegn

Andinet Tefera Desalegn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE
    Publication number: 20230068191
    Abstract: In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.
    Type: Application
    Filed: October 20, 2022
    Publication date: March 2, 2023
    Inventors: Nicholas Stephen Dellas, Dong Seup Lee, Andinet Tefera Desalegn
  • Transistor with buffer structure having carbon doped profile
    Patent number: 11508830
    Abstract: In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.
    Type: Grant
    Filed: December 3, 2020
    Date of Patent: November 22, 2022
    Assignee: Texas Instruments Incorporated
    Inventors: Nicholas Stephen Dellas, Dong Seup Lee, Andinet Tefera Desalegn
  • TRANSISTOR WITH BUFFER STRUCTURE HAVING CARBON DOPED PROFILE
    Publication number: 20220181466
    Abstract: In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.
    Type: Application
    Filed: December 3, 2020
    Publication date: June 9, 2022
    Inventors: Nicholas Stephen Dellas, Dong Seup Lee, Andinet Tefera Desalegn