Patents by Inventor André Baran
André Baran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230369509Abstract: Techniques are provided herein for forming thin film transistor (TFT) structures having one or more doped contact regions. The addition of certain dopants can be used to increase conductivity and provide higher thermal stability in the contact regions of the TFT. Memory structures having TFT structures are arranged in a two-dimensional array within one or more interconnect layers and stacked in a vertical direction such that multiple tiers of memory structure arrays are formed within the interconnect region. Any of the TFT structures within the memory structures may include one or more contacts that are doped with additional elements. The doping profile of the contacts can be tuned to optimize performance, stability, and reliability of the TFT structure. Furthermore, additional doping may be performed within the area beneath the contacts and extending into the semiconductor region.Type: ApplicationFiled: May 12, 2022Publication date: November 16, 2023Applicant: Intel CorporationInventors: Jisoo Kim, Xiaoye Qin, Timothy Jen, Harish Ganapathy, Van H. Le, Huiying Liu, Prem Chanani, Cheng Tan, Shailesh Kumar Madisetti, Abhishek Anil Sharma, Brian Wadsworth, Vishak Venkatraman, Andre Baran
-
Publication number: 20230369508Abstract: Techniques for forming thin film transistors (TFTs) having multilayer and/or concentration gradient semiconductor regions. An example integrated circuit includes a gate electrode, a gate dielectric on the gate electrode, and a semiconductor region on the gate dielectric. In some cases, the semiconductor region includes a plurality of compositionally different material layers, at least two layers of the different material layers each being a semiconductor layer. In some other cases, the semiconductor region includes a single layer having a material concentration gradient extending from a bottom surface of the single layer (adjacent to the gate dielectric) to a top surface of the single layer. The integrated circuit further includes first and second conductive contacts that each contact a respective portion of the semiconductor region.Type: ApplicationFiled: May 12, 2022Publication date: November 16, 2023Applicant: Intel CorporationInventors: Timothy Jen, Prem Chanani, Cheng Tan, Brian Wadsworth, Andre Baran, James Pellegren, Christopher J. Wiegand, Van H. Le, Abhishek Anil Sharma, Shailesh Kumar Madisetti, Xiaojun Weng
-
Publication number: 20230290812Abstract: An integrated circuit (IC) includes a transistor, and a first layer including electrically conductive material. In an example, the first layer is conductively coupled to the transistor. The IC further includes a second layer including electrically conductive material above the first layer. The IC further includes one or more intervening layers between the first and second layers. In an example, the one or more intervening layers include at least a third layer, wherein the third layer includes (i) a first metal, (ii) oxygen, and (iii) one or both of a second metal or an oxide thereof within the third layer. In an example, the first layer, the second layer, and the one or more intervening layers form a metal-insulator-metal (MIM) capacitor. In an example, the MIM capacitor and the transistor, in combination, form a memory cell of a dynamic random access memory (DRAM) array.Type: ApplicationFiled: March 11, 2022Publication date: September 14, 2023Applicant: Intel CorporationInventors: Travis Lajoie, Andre Baran, Alexandra De Denko, Christine Radlinger, Yu-Che Chiu, Yixiong Zheng
-
Publication number: 20230197826Abstract: Self-aligned gate endcap (SAGE) architectures with improved caps, and methods of fabricating self-aligned gate endcap (SAGE) architectures with improved caps, are described. In an example, an integrated circuit structure includes a first gate structure over a first semiconductor fin. A second gate structure is over a second semiconductor fin. A gate endcap isolation structure is between the first gate structure and the second gate structure. The gate endcap isolation structure has a higher-k dielectric cap layer on a lower-k dielectric wall. The higher-k dielectric cap layer includes hafnium and oxygen and has 70% or greater monoclinic crystallinity.Type: ApplicationFiled: December 21, 2021Publication date: June 22, 2023Inventors: Christine RADLINGER, Tongtawee WACHARASINDHU, Andre BARAN, Kiran CHIKKADI, Devin MERRILL, Nilesh DENDGE, David J. TOWNER, Christopher KENYON
-
Publication number: 20220359759Abstract: Transistors with metal oxide channel material that is in-situ doped for desired charge carrier concentrations. The metal oxide channel material may be deposited by atomic layering of multiple constituent metals with an oxidation of each layer. Such an ALD process may be performed by cyclically depositing a precursor of one of the metals upon a substrate during a deposition phase, and oxidizing the absorbed precursor during an oxidation phase. For a quinary metal oxide, each of three metal precursors may be introduced and oxidized during the ALD process, and charge carrier concentrations may be modulated by further introducing a fourth metal precursor during the ALD process in a manner that disperses this dopant metal within the film at a significantly lower chemical concentration than the other metals.Type: ApplicationFiled: May 5, 2021Publication date: November 10, 2022Applicant: Intel CorporationInventors: Chieh-Jen Ku, Andre Baran, Bernhard Sell, David Goldstein, Timothy Jen
-
Publication number: 20220181460Abstract: Disclosed herein are transistor source/drain contacts, and related methods and devices. For example, in some embodiments, a transistor may include a channel and a source/drain contact, wherein the source/drain contact includes an interface material and a bulk material, the bulk material has a different material composition than the interface material, the interface material is between the bulk material and the channel, the interface material includes indium and an element different from indium, and the element is aluminum, vanadium, zirconium, magnesium, gallium, hafnium, silicon, lanthanum, tungsten, or cadmium.Type: ApplicationFiled: December 7, 2020Publication date: June 9, 2022Applicant: Intel CorporationInventors: Chieh-Jen Ku, Kendra Souther, Andre Baran, Pei-hua Wang, Bernhard Sell
-
Publication number: 20220096005Abstract: The present invention relates to a supplementary device a supplementary device for a manually operable injection device. The supplementary device has a body defining a passage through which an injection device is slidable, and a securing unit to secure the body to the injection device in the specific position when the injection device is received through the passage.Type: ApplicationFiled: October 14, 2021Publication date: March 31, 2022Inventors: André Baran, Kay Behrendt, Erich Rittenbacher
-
Patent number: 11179100Abstract: The present invention relates to a supplementary device a supplementary device for a manually operable injection device. The supplementary device has a body defining a passage through which an injection device is slidable, and a securing unit to secure the body to the injection device in the specific position when the injection device is received through the passage.Type: GrantFiled: September 10, 2018Date of Patent: November 23, 2021Assignee: Sanofi-Aventis Deutschland GMBHInventors: André Baran, Kay Behrendt, Erich Rittenbacher
-
Publication number: 20190151554Abstract: A supplemental device for attachment to an injection device is presented having a display; a processor arrangement; a dose dialed detector operable to detect a dose of medicament dialed into an attached injection device; a dose delivery determiner for determining that a dose of medicament has been delivered; a quantity determiner determining a quantity of medicament that has been delivered; and a clock configured to determine a current time. The processor arrangement is configured when the supplemental device is in a default mode to display both a quantity of medicament that was delivered since a last dose and a time elapsed since delivery of the last dose.Type: ApplicationFiled: January 29, 2019Publication date: May 23, 2019Inventors: Alexander Allerdings, Stephan Mueller-Pathle, André Baran, Kay Behrendt
-
Patent number: 10195351Abstract: A supplemental device for attachment to an injection device is presented having a display; a processor arrangement; a dose dialed detector operable to detect a dose of medicament dialed into an attached injection device; a dose delivery determiner for determining that a dose of medicament has been delivered; a quantity determiner determining a quantity of medicament that has been delivered; and a clock configured to determine a current time. The processor arrangement is configured when the supplemental device is in a default mode to display both a quantity of medicament that was delivered since a last dose and a time elapsed since delivery of the last dose.Type: GrantFiled: February 8, 2013Date of Patent: February 5, 2019Assignee: Sanofi-Aventis Deutschland GMBHInventors: Alexander Allerdings, Stephan Mueller-Pathle, André Baran, Kay Behrendt
-
Patent number: 10195352Abstract: A supplemental device for attachment to an injection device comprises an aligning arrangement for ensuring a predetermined positional relationship between the supplemental device and the injection device; and a securing arrangement for securing the supplemental device to the injection device.Type: GrantFiled: September 17, 2016Date of Patent: February 5, 2019Assignee: Sanofi-Aventis Deutschland GMBHInventors: Andre Baran, Kay Behrendt, Martin Haupt
-
Publication number: 20190029590Abstract: The present invention relates to a supplementary device a supplementary device for a manually operable injection device. The supplementary device has a body defining a passage through which an injection device is slidable, and a securing unit to secure the body to the injection device in the specific position when the injection device is received through the passage.Type: ApplicationFiled: September 10, 2018Publication date: January 31, 2019Inventors: André Baran, Kay Behrendt, Erich Rittenbacher
-
Patent number: 10105094Abstract: The present invention relates to a supplementary device a supplementary device for a manually operable injection device. The supplementary device has a body defining a passage through which an injection device is slidable, and a securing unit to secure the body to the injection device in the specific position when the injection device is received through the passage.Type: GrantFiled: February 8, 2013Date of Patent: October 23, 2018Assignee: Sanofi-Aventis Deutschland GMBHInventors: André Baran, Kay Behrendt, Erich Rittenbacher
-
Patent number: 9790977Abstract: The present invention relates to a supplementary device for a manually operable injection device. The device has a body and a mating unit configured to releasably mount the body to the injection device in a specific position relative to an outside surface of the injection device.Type: GrantFiled: February 8, 2013Date of Patent: October 17, 2017Assignee: Sanofi-Aventis Deutschland GmbHInventors: Andre Baran, Kay Behrendt
-
Patent number: 9691839Abstract: Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.Type: GrantFiled: December 14, 2011Date of Patent: June 27, 2017Assignee: Intel CorporationInventors: Nick Lindert, Timothy E. Glassman, Andre Baran
-
Publication number: 20170000950Abstract: A supplemental device for attachment to an injection device comprises an aligning arrangement for ensuring a predetermined positional relationship between the supplemental device and the injection device; and a securing arrangement for securing the supplemental device to the injection device.Type: ApplicationFiled: September 17, 2016Publication date: January 5, 2017Inventors: Andre Baran, Kay Behrendt, Martin Haupt
-
Patent number: 9526838Abstract: A supplemental device for attachment to an injection device comprises an aligning arrangement for ensuring a predetermined positional relationship between the supplemental device and the injection device; and a securing arrangement for securing the supplemental device to the injection device.Type: GrantFiled: February 8, 2013Date of Patent: December 27, 2016Assignee: Sanofi-Aventis Deutschland GmbHInventors: Andre Baran, Kay Behrendt, Martin Haupt
-
Publication number: 20150032059Abstract: A supplemental device for attachment to an injection device is presented having a display; a processor arrangement; a dose dialled detector operable to detect a dose of medicament dialled into an attached injection device; a dose delivery determiner for determining that a dose of medicament has been delivered; a quantity determiner determining a quantity of medicament that has been delivered; and a clock configured to determine a current time. The processor arrangement is configured when the supplemental device is in a default mode to display both a quantity of medicament that was delivered since a last dose and a time elapsed since delivery of the last dose.Type: ApplicationFiled: February 8, 2013Publication date: January 29, 2015Inventors: Alexander Allerdings, Stephan Mueller-Pathle, André Baran, Kay Behrendt
-
Publication number: 20150025470Abstract: The present invention relates to a supplementary device a supplementary device for a manually operable injection device. The supplementary device has a body defining a passage through which an injection device is slidable, and a securing unit to secure the body to the injection device in the specific position when the injection device is received through the passage.Type: ApplicationFiled: February 8, 2013Publication date: January 22, 2015Inventors: André Baran, Kay Behrendt, Erich Rittenbacher
-
Publication number: 20150018770Abstract: The present invention relates to a supplementary device for a manually operable injection device. The device has a body and a mating unit configured to releasably mount the body to the injection device in a specific position relative to an outside surface of the injection device.Type: ApplicationFiled: February 8, 2013Publication date: January 15, 2015Applicant: Sanofi-Aventis Deutschland GmbHInventors: Andre Baran, Kay Behrendt